Abstract: An optical switch, e.g., a display device based on layer break up or layer displacement having at least two different states, in which one of the fluids, e.g., oil in a first state, adjoins at least a first support plate and, in the second state, the other fluid at least partly adjoins the first support plate, in which picture elements are separated by areas having a hydrophilic surface.

Abstract: Light-emitting diode (LED) comprising a translucent substrate of ?-Al2O3 or SiC and a first layer of a light-emitting semiconductor material grown on a first side of said substrate, a first electrode and a second electrode, wherein said substrate is polycrystalline. The average grain size of the polycrystalline substrate is preferably of the same order as the wavelength of the light emitted by the semiconductor material during use of the LED.

Abstract: A planar magnetic winding structure such as a transformer or inductor having an air gap in the core has a “keep away” region of 2 to 3 times the gap height in which there are no windings, reducing high frequency winding losses by 35 percent or more, without appreciable increases in low frequency winding losses. Such structures are useful, for example, in electronic ballasts for the lighting industry.

Abstract: A planar magnetic device with vertically oriented coil windings having a cross-section of a core with a torroidally-shaped winding structure taken transverse to the plane of the winding structure having two adjacent “winding windows” where the coils are present. One or more gaps in the core materials surrounding the windings store most of the energy generated by the inductor. The gap of height of at least one half the height of the winding structure is confined to the area between the winding cross-sections. Furthermore, in another aspect of the invention the gap is filled with a multi-layer structure of an alternating mono-layer of equally sized ferrite particles and a layer of synthetic resin.

Abstract: A high-leakage planar magnetic component such as an inductor, having a winding structure in which flat winding turns are oriented transverse to the plane of the winding structure, exhibits significantly lower winding losses than components having a stacked arrangement of flat winding turns parallel to the plane of the winding structure. A dense winding structure having such a transverse orientation can readily be made by forming a flat conductor into a coil using conventional wire winding techniques.

Abstract: Thin-film magnetic head having a head face (103) and comprising a magnetoresistive element (109) oriented transversely to the head face and a flux-guiding element (107) of a magnetically permeable material terminating in the head face. A peripheral area (109a) of the magnetoresistive element extending parallel to the head face is present opposite the flux-guiding element for forming a magnetic connection between the magnetoresistive element and the flux-guiding element. The flux-guiding element and the peripheral area of the magnetoresistive element constitute a common magnetic contact face (111), while the magnetically permeable material of the flux-guiding element is electrically insulating.

Abstract: Thin-film magnetic head having a head face (103) and comprising a magnetoresistive element (109) oriented transversely to the head face and a flux-guiding element (107) of a magnetically permeable material terminating in the head face. A peripheral area (109a) of the magnetoresistive element extending parallel to the head face is present opposite the flux-guiding element for forming a magnetic connection between the magnetoresistive element and the flux-guiding element. The flux-guiding element and the peripheral area of the magnetoresistive element constitute a common magnetic contact face (111), while the magnetically permeable material of the flux-guiding element is electrically insulating.

Abstract: A semiconductor device includes a transparent switching element (1) with two connection electrodes (2, 3) of a transparent material and an interposed transparent channel region (4) of a semiconductor material provided with a transparent gate electrode (5) of a conductive material, separated from the channel region (4) by a transparent insulating layer (6). The semiconductor material is a degenerate semiconductor material with a basic material having a bandgap (10) between conduction band (11) and valence band (12) of electrons greater than 2.5 eV and a mobility of charge carriers greater than 10 cm.sup.2 /Vs provided with dopant atoms which form a fixed impurity energy level (13) adjacent or in the valence band (12) or conduction band (11) of the basic material. The degenerate semiconductor material is transparent because the absorption of visible light is not possible owing to the great bandgap (10), while also no absorption of visible light takes place through the impurity energy levels (13).

Abstract: A magneto-optical recording medium comprising a substrate and a recording layer, the recording layer comprising a bilayer structure consisting of a first layer on which a magnetic second layer is deposited, the second layer demonstrating perpendicular magnetic anisotropy and a saturation remanence of at least 90%, whereby the magnetic material of the second layer comprises an oxide of iron, and the first layer comprises an oxidic material whose in-plane lattice parameter differs from that of the magnetic material, the growth of the second layer upon the first layer being at least locally epitaxial.

Abstract: The invention relates to a tunnel diode provided with two metallically conducting electrodes (1, 2) with an insulating dielectric (3) in between, which forms a barrier with a barrier level for electrons and which has a thickness such that electrons can tunnel through the barrier from the one to the other electrode. Such a tunnel diode has the disadvantage that it has no memory. In many applications it is desirable for the tunnel diode to hold a certain switching state, such as open/closed. According to the invention, the tunnel diode is characterized in that the dielectric (3) comprises a layer of a material which is ferroelectric at room temperature with a remanent polarization which influences the barrier level. It is achieved thereby that the tunnel diode has various switching states in dependence on the remanent polarization of the dielectric (3). The switching state is maintained until the polarization of the dielectric (3) changes.

Abstract: A switching element is provided with two electrodes (1, 2) with a semiconducting dielectric (3) therebetween, one electrode (2) having a material which forms a Schottky contact with the semiconducting dielectric (3), while a space charge region (3') of the Schottky contact forms a tunnelling barrier for electrons during operation. It is desirable in many applications for the switching element to hold a certain switching state, such as open or closed, during a longer period. The switching element may then be used, for example, as a memory element. The dielectric (3) includes a ferroelectric material with a remanent polarization which influences a dimension of the tunnelling barrier. In this manner the switching element has various switching states depending on the remanent polarization of the dielectric (3). These switching states are held until the polarization of the dielectric (3) changes.