Abstract: A cooling device for cooling a light-emitting semiconductor device, such as a LED device (20), comprises a ceramic plate (15) having coolant-conveying channels (12) incorporated therein. The ceramic plate (15) is adapted for forming an integral part of the optical system of the light-emitting semiconductor device (20) and to cool a light-emitting portion (26) of the light-emitting semiconductor device (20). A method of forming a cooling device comprises the steps of forming a charge of ceramic particles, embossing the charge with a stamp to form coolant-conveying channels in the charge, hardening the charge, and providing a cover on top of the channels to seal them.

Abstract: A cooling device for cooling a light-emitting semiconductor device, such as a LED device (20), comprises a ceramic plate (15) having coolant-conveying channels (12) incorporated therein. The ceramic plate (15) is adapted for forming an integral part of the optical system of the light-emitting semiconductor device (20) and to cool a light-emitting portion (26) of the light-emitting semiconductor device (20). A method of forming a cooling device comprises the steps of forming a charge of ceramic particles, embossing the charge with a stamp to form coolant-conveying channels in the charge, hardening the charge, and providing a cover on top of the channels to seal them.

Abstract: The invention relates to a ferroelectric device (10) with a body (11) comprising a substrate (1) and a ferroelectric layer (2) provided with a connection conductor (3) on a side facing away from the substrate (1), which ferroelectric layer contains an oxygen-free ferroelectric material (2) and is used to form an active electrical element (4), in particular a memory element (4). Such a device forms an attractive non-volatile memory device. In accordance with the invention, a conductive layer (5) is present between the substrate (1) and the ferroelectric layer (2), which conductive layer forms a further connection conductor (5) of the ferroelectric layer (2), and the active electrical element (4) is obtained as a result of the fact that the ferroelectric layer (2) forms a Schottky junction with at least one of the connection conductors (3, 5).