Abstract: A method and apparatus delivers pulsed laser energy to a damage-sensitive surface. The pulse scanning method and apparatus allow for the deposition of a total dose of laser radiation that could not be attained by any conventional means without damaging the substrate being exposed. Using a solid-state diode pumped YAG laser and an enclosure with a gas ambient, laser pulses are scanned across a substrate according to one of several programmed approaches. Pulses are deposited that are non-adjacent in time, or non-adjacent in space, or both; conventional methods have the pulses adjacent in both time and space. Using the various approaches of the invention, the degree of spatial and temporal adjacency can be precisely controlled to permit significant laser radiation doses without causing any substrate damage.

Abstract: A method for removing ion implanted photoresist from a surface of a substrate is provided. The method may include introducing a gas to a reaction chamber containing the substrate; illuminating the ion implanted photoresist with radiation from a laser in the presence of the gas; and scanning the radiation across the surface in the presence of the gas to photoreactively remove the ion implanted photoresist from the surface.

Abstract: An automated system for use in semiconductor manufacturing may include a semiconductor reaction chamber, a solid-state laser mounted above a top surface of the semiconductor reaction chamber, and a gas delivery module connected to the semiconductor reaction chamber. The system may include a gas exhaust pump connected to the semiconductor reaction chamber, a temperature sensor connected to the semiconductor reaction chamber, and a housing surrounding the reaction chamber, the solid-state laser, the gas delivery module, the gas exhaust pump, and the temperature sensor, where the housing is portable.

Abstract: A system for removing photoresist from semiconductor wafers is disclosed. The system utilizes a solid-state laser having wavelengths in the near-visible and visible portions of the electromagnetic spectrum to remove photoresist without requiring hazardous gases or wet solutions. In addition, the system does not damage the substrate being cleaned, nor leave a carbon residue requiring further processing to remove. The system uses photon energy, oxygen, water vapor and ozone to interact with contaminants on a surface, forming a gas reaction zone (GRZ). The GRZ reacts and completely removes the photoresist or other unwanted contamination.

Abstract: A system for removing photoresist from semiconductor wafers is disclosed. The system utilizes a solid-state laser having wavelengths in the near-visible and visible portions of the electromagnetic spectrum to remove photoresist without requiring hazardous gases or wet solutions. In addition, the system does not damage the substrate being cleaned, nor leave a carbon residue requiring further processing to remove. The system uses photon energy, oxygen, water vapor and ozone to interact with contaminants on a surface, forming a gas reaction zone (GRZ). The GRZ reacts and completely removes the photoresist or other unwanted contamination.