Abstract: An adhesive composition includes a polyphenolic polymer which has a first repeating unit and a second repeating unit of the formula: 1

Abstract: An antireflective composition includes a polyphenolic polymer which has a first repeating unit and a second repeating unit of the formula: wherein each of R1, R2, R3, R4, and R5 is individually a hydroxy group, hydrogen or an azo dye and only one of R1, R2, R3, R4, and R5 is a hydroxy group.

Abstract: A dynamic random access memory is fabricated on a monolithic chip of semiconductor material. The memory is formed of an array of memory cells controlled for reading and writing by word and bit lines which are selectively connected to the cells. Each cell is a single field effect transistor structure having improved electrical charge storage capability. The improved charge storage capability of each cell is provided by an electrical capacitance structure uniquely arranged and formed as an integral portion of the field effect transistor structure. The gate electrode of each field effect transistor structure is connected to a predetermined one of said word lines. The drain of each field effect transistor is connected to a predetermined one of said bit lines. The source of each field effect transistor structure is integrally connected to and forms a portion of the uniquely arranged electrical capacitance structure of the field effect transistor structure.

Abstract: A dynamic random access memory is fabricated on a monolithic chip of semiconductor material. The memory is formed of an array of memory cells controlled for reading and writing by word and bit lines which are selectively connected to the cells. Each cell is a single field effect transistor structure having improved electrical charge storage capability. The improved charge storage capability of each cell is provided by an electrical capacitance structure uniquely arranged and formed as an integral portion of the field effect transistor structure. The gate electrode of each field effect transistor structure is connected to a predetermined one of said word lines. The drain of each field effect transistor is connected to a predetermined one of said bit lines. The source of each field effect transistor structure is integrally connected to and forms a portion of the uniquely arranged electrical capacitance structure of the field effect transistor structure.

Abstract: The invention is a process of fabricating semiconductor devices including an insulating film across the surface that has a planar configuration. Alternatively, the film may be of uniform thickness and non-planar configuration. Both the planar and uniform thickness characteristics of the insulating film permit openings to be formed therein without over etching a defined surface area and conductors to be formed thereon without broadening. An important feature of the invention is utilizing the differential growth rate of films on semiconductor surfaces and/or selection of a suitable initial film thickness as a diffusion mask. The initial film thickness also contributes to a planar or uniform film thickness or other configuration across the device.