Abstract: A method is provided for measuring defects in semiconductor materials. In one embodiment the method includes placing deuterium in the material and directing an ion beam onto the material to cause a nuclear reaction with the deuterium. Products of the nuclear reaction are analyzed (NRA) to measure the concentration of defects. In other embodiments, a spectroscopic technique is used to detect the deuterium taggant. Lattice defect or total defect occurrences can be selected by selecting the method of placing deuterium in the sample. Defect concentration vs. depth below the surface of material can be determined by varying the energy of the ion beam or by measuring energy profiles of products of the nuclear reaction. The method may be applied to wafers, pixels or other forms of semiconductor materials and may be combined with X-ray analysis of elements on the material.

Abstract: Apparatus and method are provided for hydrogenating semiconductor or other materials by ultraviolet (UV) radiation in the presence of hydrogen. Hydrogen uptake may be optimized by selection of temperature and wavelength of the UV radiation. Patterned areas may be selectively hydrogenated, such as mesas in Avalanche Photodiode Arrays.