Abstract: An integrated circuit having a substrate with a first conductivity type of semiconductor material. A buried layer is formed in the substrate. The buried layer has a second conductivity type of semiconductor material. A first semiconductor layer is formed over the buried layer. The first semiconductor layer has the second conductivity type of semiconductor material. A trench is formed through the first semiconductor layer and buried layer and extends into the substrate. The trench is lined with an insulating layer and filled with an insulating material. A second semiconductor layer is formed in the first semiconductor layer. The second semiconductor layer has the first conductivity type of semiconductor material. A third semiconductor layer is formed in the second semiconductor layer. The third semiconductor layer has the second conductivity type of semiconductor material. The first, second, and third semiconductor layers form the collector, base, and emitter of a bipolar transistor.

Abstract: A discrete semiconductor device has a substrate with a first conductivity type of semiconductor material. A first semiconductor layer is formed over the substrate. The first semiconductor layer having the first conductivity type of semiconductor material. A second semiconductor layer over the first semiconductor layer. The second semiconductor layer has a second conductivity type of semiconductor material. A trench is formed through the second semiconductor layer and extends into the second semiconductor layer. The trench has a rounded or polygonal shape and vertical sidewalls. The trench is lined with an insulating layer and filled with an insulating material. A boundary between the first and second semiconductor layers forms a p-n junction. The trench surrounds the p-n junction to terminate the electric field of a voltage imposed on the second semiconductor layer. The discrete semiconductor device can also be a transistor, thyristor, triac, or transient voltage suppressor.

Abstract: An integrated circuit having a substrate with a first conductivity type of semiconductor material. A buried layer is formed in the substrate. The buried layer has a second conductivity type of semiconductor material. A first semiconductor layer is formed over the buried layer. The first semiconductor layer has the second conductivity type of semiconductor material. A trench is formed through the first semiconductor layer and buried layer and extends into the substrate. The trench is lined with an insulating layer and filled with an insulating material. A second semiconductor layer is formed in the first semiconductor layer. The second semiconductor layer has the first conductivity type of semiconductor material. A third semiconductor layer is formed in the second semiconductor layer. The third semiconductor layer has the second conductivity type of semiconductor material. The first, second, and third semiconductor layers form the collector, base, and emitter of a bipolar transistor.

Abstract: A discrete semiconductor device has a substrate with a first conductivity type of semiconductor material. A first semiconductor layer is formed over the substrate. The first semiconductor layer having the first conductivity type of semiconductor material. A second semiconductor layer over the first semiconductor layer. The second semiconductor layer has a second conductivity type of semiconductor material. A trench is formed through the second semiconductor layer and extends into the second semiconductor layer. The trench has a rounded or polygonal shape and vertical sidewalls. The trench is lined with an insulating layer and filled with an insulating material. A boundary between the first and second semiconductor layers forms a p-n junction. The trench surrounds the p-n junction to terminate the electric field of a voltage imposed on the second semiconductor layer. The discrete semiconductor device can also be a transistor, thyristor, triac, or transient voltage suppressor.

Abstract: A discrete semiconductor device has a substrate with a first conductivity type of semiconductor material. A first semiconductor layer is formed over the substrate. The first semiconductor layer having the first conductivity type of semiconductor material. A second semiconductor layer over the first semiconductor layer. The second semiconductor layer has a second conductivity type of semiconductor material. A trench is formed through the second semiconductor layer and extends into the second semiconductor layer. The trench has a rounded or polygonal shape and vertical sidewalls. The trench is lined with an insulating layer and filled with an insulating material. A boundary between the first and second semiconductor layers forms a p-n junction. The trench surrounds the p-n junction to terminate the electric field of a voltage imposed on the second semiconductor layer. The discrete semiconductor device can also be a transistor, thyristor, triac, or transient voltage suppressor.

Abstract: An integrated circuit having a substrate with a first conductivity type of semiconductor material. A buried layer is formed in the substrate. The buried layer has a second conductivity type of semiconductor material. A first semiconductor layer is formed over the buried layer. The first semiconductor layer has the second conductivity type of semiconductor material. A trench is formed through the first semiconductor layer and buried layer and extends into the substrate. The trench is lined with an insulating layer and filled with an insulating material. A second semiconductor layer is formed in the first semiconductor layer. The second semiconductor layer has the first conductivity type of semiconductor material. A third semiconductor layer is formed in the second semiconductor layer. The third semiconductor layer has the second conductivity type of semiconductor material. The first, second, and third semiconductor layers form the collector, base, and emitter of a bipolar transistor.

Abstract: A discrete semiconductor device has a substrate with a first conductivity type of semiconductor material. A first semiconductor layer is formed over the substrate. The first semiconductor layer having the first conductivity type of semiconductor material. A second semiconductor layer over the first semiconductor layer. The second semiconductor layer has a second conductivity type of semiconductor material. A trench is formed through the second semiconductor layer and extends into the second semiconductor layer. The trench has a rounded or polygonal shape and vertical sidewalls. The trench is lined with an insulating layer and filled with an insulating material. A boundary between the first and second semiconductor layers forms a p-n junction. The trench surrounds the p-n junction to terminate the electric field of a voltage imposed on the second semiconductor layer. The discrete semiconductor device can also be a transistor, thyristor, triac, or transient voltage suppressor.

Abstract: The present invention provides mobile sealant compositions that are particularly useful for bicycle tire tubes and the like. The improvements include a novel particulate for use in the sealant composition that is greatly conformable for closing pores in a plug. Another improvement includes a balanced fiber composition as part of the sealant. Also, the carrier fluid is formulated to substantially reduce losses due to gaseous diffusion by preferably utilizing high levels of ethylene glycol, such as greater than about 60 percent.

Abstract: An apparatus is provided for use in determining the components of an inputted gas mixture. The apparatus includes a single piece body or framework preferably made of a high insulating material, such as ceramic. The body includes a number of cut-outs for receiving or incorporating hardware used in generating ions, controlling their movement, and directing them to an ion collector plate. One of the cut-outs formed in the insulating body receives an ion source assembly. Another of the cutouts is a passageway with metallized material coated along the walls thereof for use in generating an electric field. A third cut-out receives and is associated with a magnet assembly used in directing ion movement towards the collector plate. The single body and cut-out construction reduces the number of individual parts, improves the assembly of such parts and reduces adjustment time associated with such parts.

Abstract: Apparatus and method are provided for calibrating a mass spectrometer. The calibration hardware includes a relatively small, relatively low pressurized tank for containing calibration gas. The calibration gas tank is preferably located inside the same housing that contains the ion source assembly and the analyzing section of the mass spectrometer. Each of the calibration gas and sample gas, whose components are to be determined, communicates with its own associated valve. These two valves control the flow of a selected one of the sample gas and the calibration gas to the ion source assembly. The calibration gas valve has an extremely low leakage rate and can be controlled to permit the passage of very low flow rates of calibration gas, which can be of benefit in checking the linearity associated with the ion source assembly pressure. For each calibration procedure, very small amounts of calibration gas are utilized, in a range around 10.sup.-5 STD cc.

Abstract: An actuator system is provided which includes a force transfer element and a force receiving element. A viscous material interconnects the force transfer element and the force receiving element. A workpiece, such as a valve member, is connected to the force receiving element. When a controlled force is applied to the force transfer element, the controlled force and resulting movement are rigidly coupled using the viscous material to the force receiving element so that the workpiece can be moved or otherwise operably controlled. When an uncontrolled force is received by the force transfer element, in which the movement of the force transfer element is slow relative to the deformation of the viscous material, there is no coupling of the uncontrolled force and resulting movement to the workpiece. As a result, the actuator system is able to couple rapid movements using the viscous material while relatively slow movements are not coupled.

Abstract: A germanium mesa transistor is fabricated having an epitaxially grown base region and an aluminum alloy emitter in the epitaxially grown layer spaced from the collector junction, and having a gold-comprising base electrode surrounding the emitter and closely spaced therefrom. The gold contact is formed by photolithographic and selective etching techniques, followed by the formation of the aluminum emitter, which is also formed by photolithographic and selective etching techniques. A key step is the selective removal of the aluminum from the germanium wafer without disturbing the gold contact.

Abstract: A novel antenna is disclosed which provides inherent filtering action by ch the frequency response curve of the antenna can be shaped. In the preferred inventive embodiment, the antenna comprises at least one elongated receiving element, and preferably two such elements in the form of a dipole, both elements being constructed, at least in part, of an electrically resistive material. A detector, such as a diode detector, is directly coupled to the receiving elements. The resistance of the receiving element and the capacitances of the receiving element and the detector form a distributed parameter RC filter, the values of which parameters can be carefully controlled so as to provide the desired frequency response curve shaping. In the preferred inventive embodiment, a conductive strip is disposed along the length of and preferably to both sides of each receiving element, with a layer of dielectric material being sandwiched therebetween, whereby the filtering action is enhanced.

Abstract: An actuator system is provided which includes a force transfer element and a force receiving element. A viscous material interconnects the force transfer element and the force receiving element. A workpiece, such as a valve member, is connected to the force receiving element. When a controlled force is applied to the force transfer element, the controlled force and resulting movement are rigidly coupled using the viscous material to the force receiving element so that the workpiece can be moved or otherwise operably controlled. When an uncontrolled force is received by the force transfer element, in which the movement of the force transfer element is slow relative to the deformation of the viscous material, there is no coupling of the uncontrolled force and resulting movement to the workpiece. As a result, the actuator system is able to couple rapid movements using the viscous material, while relatively slow movements are not coupled.