Abstract: A technique for fabricating a dual damascene interconnect structure using a low dielectric constant material as a dielectric layer or layers. A low dielectric constant (low-.di-elect cons.) dielectric material is used to form an inter-level dielectric (ILD) layer between metallization layers and in which via and trench openings are formed in the low-.di-elect cons. ILD. The dual damascene technique allows for both the via and trench openings to be filled at the same time.

Abstract: A technique for fabricating a dual damascene interconnect structure using a low dielectric constant material as a dielectric layer or layers. A low dielectric constant (low-.epsilon.) dielectric material is used to form an inter-level dielectric (ILD) layer between metallization layers and in which via and trench openings are formed in the low-.epsilon. ILD. The dual damascene technique allows for both the via and trench openings to be filled at the same time.

Abstract: A method of etching in an O.sub.2 microwave plasma is provided which has a predetermined selectivity between a composite of two materials such as a photoresist and a polyimide is provided. The etch rate of each of the materials is measured at various temperatures and pressures, and this composite is then etched at a selected temperature and pressure which will provide the desired degree of selectivity.

Abstract: Sloped vias are formed in a resinous layer made from a material which is curable in stages, which can be coated on a substrate prior to partial curing, which adheres to the substrate and which shrinks upon full curing by a process which includes first using a dry, directional etch to form straight walled vias in a partially cured layer of the material coated on the substrate and then fully curing the layer. The straight walled vias are changed to sloped vias during final cure when adhesive contact between the substrate and the layer of resinous material inhibits shrinking of the side of the resinous layer which contacts the substrate, while the unsupported side of the layer is free to shrink. Such sloped vias are observed to improve the integrity of conductive coatings placed in the vias by reducing cracking, peeling and flaking thereof. Sloped vias with conductive coatings are useful in the construction of computer components.

Abstract: A system for generating a substantially uniform plasma for processing a substrate having two major surfaces. Each of the substrate major surfaces may have electrically conductive portions. Two electrodes are oppositely disposed with respect to one another on either side of the substrate. A first r.f. power source is electrically connected to the first electrode and a second r.f. power source is electrically connected to the second electrode. The first and second r.f. power sources are out of phase with respect to one another, resulting in the generation of a substantially uniform plasma field.