Abstract: A fabrication system and method of fabrication for producing microelectromechanical devices such as field-effect displays using thin-film technology. A spacer is carried at its proximal end on the surface of a substrate having field-effect emitters with the spacer being enabled for tilting movement from a nested position to a deployed position which is orthogonal to the plane of the substrate. An actuator is formed with one end connected with the substrate and another end connected with spacer. The actuator is made of a shape memory alloy material which contracts when heated through the material's phase-change transition temperature. Contraction of the actuator exerts a pulling force on the spacer which is tilted to the deployed position. A plurality of the spacers are distributed over the area of the display. A glass plate having a phosphor-coated surface is fitted over the distal ends of the deployed spacer.

Abstract: A light-emitting structure (306) contains a main section (302), a pattern of ridges (314) situated along the main section, and a plurality of light-emissive regions (313) situated in spaces between the ridges. The light-emissive regions produce light of various colors upon being hit by electrons. The ridges, which extend further away from the main section than the light-emissive regions, are substantially non-emissive of light when hit by electrons. Each ridge includes a dark region. The ridges thereby form a raised black matrix that improves contrast and color purity. When the light-emitting structure is used in an optical display, the raised black matrix contacts internal supports (308) and, in so doing, protects the light-emissive regions from being damaged. The light-emitting structure can be formed according to various techniques of the invention.

Abstract: An optical device contains first and second plates (302 and 303), a pattern of ridges (314) situated over the first plate, light-emissive regions (313) situated in spaces between the ridges, electron-emissive elements (309) situated over the second plate, and supporting structure (308) that maintains a desired spacing between the plates. The electron-emissive elements emit electrons that strike the light-emissive regions, causing them to produce light of various colors. The ridges, which extend further away from the first plate than the light-emissive regions, are substantially non-emissive of light when hit by electrons. Each ridge includes a dark region formed with metal, ceramic, semiconductor, or/and carbide. The ridges thereby form a raised black matrix that improves contrast and color purity.

Abstract: A light-emitting structure (306) contains a main section (302), a pattern of ridges (314) situated along the main section, and a plurality of light-emissive regions (313) situated in spaces between the ridges. The light-emissive regions produce light of various colors upon being hit by electrons. The ridges, which extend further away from the main section than the light-emissive regions, are substantially non-emissive of light when hit by electrons. Each ridge includes a dark region. The ridges thereby form a raised black matrix that improves contrast and color purity. The dark region of each ridge may be formed with metal, ceramic, semiconductor, or carbide. Each ridge may include an additional region (314b) of different chemical composition than the dark region.

Abstract: An etchback apparatus for use in integrated circuit processing after via fill to remove excess metal and leave plugged vias, has a sacrificial ring with a surface consisting substantially of a metal that etches much like the metal used to fill the vias. The excess surface area in the process provides sacrificial metal so microloading is avoided. he metal used to fill the vias.

Abstract: A process in the manufacture of integrated circuits in which a barrier layer of Cr or Ti is deposited in a partial atmosphere of N.sub.2 in an Ar sputtering gas on a layer of Si so that the N.sub.2 is incorporated in the Cr or Ti, after which conductor material such as gold, silver, low temperature eutectic or other high temperature solders, are deposited on the barrier layer. This barrier layer reduces migration of Si and Cr through and over the conductor material so that a wettable (bondable) surface is provided which results in greater bond strength and greater reliability when the die is attached to a bonding pad by the conventional heat treat method.

Abstract: A method of depositing refractory metal silicides in a sputtering system on one or more substrates in an environment which supports a glow discharge from a pair of targets at an energy level sufficient to co-sputter and deposit the material from the targets onto the substrate(s). The method includes either a RF high voltage to be applied to one of the targets, or a DC voltage in the presence of a magnetic field to be applied to both targets so as to deposit silicon, either doped or pure, and refractory metal, either doped or pure, as the case may be, to provide a thin film of doped refractory metal silicide on the substrate(s).