Patents by Inventor Ronald V. BRAVENEC

Ronald V. BRAVENEC has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8669705
    Abstract: A surface wave plasma (SWP) source is described. The SWP source comprises an electromagnetic (EM) wave launcher configured to couple EM energy in a desired EM wave mode to a plasma by generating a surface wave on a plasma surface of the EM wave launcher adjacent the plasma. The EM wave launcher comprises a slot antenna having at least one slot. The SWP source further comprises a first recess configuration and a second recess configuration formed in the plasma surface, wherein at least one first recess of the first recess configuration differs in size and/or shape from at least one second recess of the second recess configurations. A power coupling system is coupled to the EM wave launcher and configured to provide the EM energy to the EM wave launcher for forming the plasma.
    Type: Grant
    Filed: March 14, 2013
    Date of Patent: March 11, 2014
    Assignee: Tokyo Electron Limited
    Inventors: Lee Chen, Jianping Zhao, Ronald V. Bravenec, Merritt Funk
  • Patent number: 8415884
    Abstract: A surface wave plasma (SWP) source is described. The SWP source comprises an electromagnetic (EM) wave launcher configured to couple EM energy in a desired EM wave mode to a plasma by generating a surface wave on a plasma surface of the EM wave launcher adjacent the plasma. The EM wave launcher comprises a slot antenna having a plurality of slots. The SWP source further comprises a first recess configuration formed in the plasma surface, wherein the first recess configuration is substantially aligned with a first arrangement of slots in the plurality of slots, and a second recess configuration formed in the plasma surface, wherein the second recess configuration is either partly aligned with a second arrangement of slots in the plurality of slots or not aligned with the second arrangement of slots in the plurality of slots. A power coupling system is coupled to the EM wave launcher and configured to provide the EM energy to the EM wave launcher for forming the plasma.
    Type: Grant
    Filed: September 8, 2009
    Date of Patent: April 9, 2013
    Assignee: Tokyo Electron Limited
    Inventors: Lee Chen, Jianping Zhao, Ronald V. Bravenec, Merritt Funk
  • Publication number: 20110057562
    Abstract: A surface wave plasma (SWP) source is described. The SWP source comprises an electromagnetic (EM) wave launcher configured to couple EM energy in a desired EM wave mode to a plasma by generating a surface wave on a plasma surface of the EM wave launcher adjacent the plasma. The EM wave launcher comprises a slot antenna having a plurality of slots. The SWP source further comprises a first recess configuration formed in the plasma surface, wherein the first recess configuration is substantially aligned with a first arrangement of slots in the plurality of slots, and a second recess configuration formed in the plasma surface, wherein the second recess configuration is either partly aligned with a second arrangement of slots in the plurality of slots or not aligned with the second arrangement of slots in the plurality of slots. A power coupling system is coupled to the EM wave launcher and configured to provide the EM energy to the EM wave launcher for forming the plasma.
    Type: Application
    Filed: September 8, 2009
    Publication date: March 10, 2011
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Lee CHEN, Jianping ZHAO, Ronald V. BRAVENEC, Merritt FUNK