Abstract: A method of blockchain-based data management of distributed binary objects. The method includes identifying a binary object associated with a blockchain. The method includes storing the binary object in a first data store responsive to identifying the binary object. The method includes storing a reference to the binary object on the blockchain. The method includes generating, responsive to an interaction with the reference to the binary object and based on the binary object and a different binary object from a different data store, an additional binary object having a data size that exceeds a maximum data size associated with each block of the blockchain.

Abstract: Spontaneous preterm birth (sPTB) is premature delivery prior to 37 weeks of pregnancy and is a leading cause of infant mortality worldwide. sPTB is associated with a unique gene expression profile. Identified herein are numerous safe and proven therapeutic compositions used for unrelated indications that have the biological effect of reversing, in part, the gene expression profile of sPTB and which can be used in preventative or interventional treatments to prevent, delay, or ameliorate sPTB. The repurposed drugs include several Class A and Class B therapeutics that are regarded as safe or low risk in pregnant subjects.

Abstract: A semiconductor device (e.g., a flip chip) includes a substrate layer that is separated from a drain contact by an intervening layer. Trench-like feed-through elements that pass through the intervening layer are used to electrically connect the drain contact and the substrate layer when the device is operated.

Abstract: A semiconductor device (e.g., a flip chip) includes a substrate layer that is separated from a drain contact by an intervening layer. Trench-like feed-through elements that pass through the intervening layer are used to electrically connect the drain contact and the substrate layer when the device is operated.

Abstract: A semiconductor device (e.g., a flip chip) includes a substrate layer that is separated from a drain contact by an intervening layer. Trench-like feed-through elements that pass through the intervening layer are used to electrically connect the drain contact and the substrate layer when the device is operated.

Abstract: A structure includes a semiconductor device formed in a substrate; an insulator adjacent to the semiconductor device; an electrical contact electrically coupled to the semiconductor device, wherein the electrical contact includes tungsten; and an electrical connector coupled to the electrical contact, wherein the electrical connector includes aluminum. A surface of the insulator and a surface of the electrical contact form a substantially even surface.

Abstract: A structure includes a semiconductor device formed in a substrate; an insulator adjacent to the semiconductor device; an electrical contact electrically coupled to the semiconductor device, wherein the electrical contact includes tungsten; and an electrical connector coupled to the electrical contact, wherein the electrical connector includes aluminum. A surface of the insulator and a surface of the electrical contact form a substantially even surface.

Abstract: Embodiments of the present invention are directed toward a trench metal-oxide-semiconductor field effect transistor (TMOSFET) device. The TMOSFET device includes a source-side-gate TMOSFET coupled to a drain-side-gate TMOSFET 1203. A switching node metal layer couples the drain of the source-side-gate TMOSFET to the source of the drain-side-gate TMOSFET so that the TMOSFETs are packaged as a stacked or lateral device.

Abstract: A semiconductor device (e.g., a flip chip) includes a substrate layer that is separated from a drain contact by an intervening layer. Trench-like feed-through elements that pass through the intervening layer are used to electrically connect the drain contact and the substrate layer when the device is operated.

Abstract: Embodiments of the present invention are directed toward a trench metal-oxide-semiconductor field effect transistor (TMOSFET) device. The TMOSFET device includes a source-side-gate TMOSFET coupled to a drain-side-gate TMOSFET 1203. A switching node metal layer couples the drain of the source-side-gate TMOSFET to the source of the drain-side-gate TMOSFET so that the TMOSFETs are packaged as a stacked or lateral device.

Abstract: Embodiments of the present invention provide a striped or closed cell trench metal-oxide-semiconductor field effect transistor (TMOSFET). The striped or closed cell TMOSFET comprises a source region, a body region disposed above the source region, a drift region disposed above the body region, a drain region disposed above the drift region. A gate region is disposed above the source region and adjacent the body region. A gate insulator region electrically isolates the gate region from the source region, body region, drift region and drain region. The body region is electrically coupled to the source region.

Abstract: A structure includes a semiconductor device formed in a substrate; an insulator adjacent to the semiconductor device; an electrical contact electrically coupled to the semiconductor device, wherein the electrical contact includes tungsten; and an electrical connector coupled to the electrical contact, wherein the electrical connector includes aluminum. A surface of the insulator and a surface of the electrical contact form a substantially even surface.

Abstract: A system and business method for enabling photolabs to provide digital image processing services, and at the same time, to provide the photolabs with the ability to use their own branding in connection with their services and to the control of all business aspects of the service, including the creation of a customized website, digital image product offerings, branding, pricing, promotions, advertisements, and film prints and related image imprinted product fulfillment.

Abstract: Technology that enables users to download to their local computing environment a simulation application and input data corresponding to a system having two or more interconnected components is described. The technology allows the user to perform a simulation in the user's local computing environment of the system of interconnected components described by the input data where the functionality of the simulation application is defined by instructions contained within the input data. In some examples, the invention enables a user to access a modified or relaxed set of features when simulating a system of interconnected components. The invention provides users with the ability to rapidly evaluate the performance of a manufacturer's product before purchase.

Abstract: Embodiments of the present invention provide a striped or closed cell trench metal-oxide-semiconductor field effect transistor (TMOSFET). The striped or closed cell TMOSFET comprises a source region, a body region disposed above the source region, a drift region disposed above the body region, a drain region disposed above the drift region. A gate region is disposed above the source region and adjacent the body region. A gate insulator region electrically isolates the gate region from the source region, body region, drift region and drain region. The body region is electrically coupled to the source region.

Abstract: A trench MOSFET is formed by creating a trench in a semiconductor substrate, then forming a barrier layer over a portion of the side wall of the trench. A thick insulating layer is deposited in the bottom of the trench. The barrier layer is selected such that the thick insulating layer deposits in the bottom of the trench at a faster rate than the thick insulating layer deposits on the barrier layer. Embodiments of the present invention avoid stress and reliability problems associated with thermal growth of insulating layers, and avoid problems with control of the shape and thickness of the thick insulating layer encountered when a thick insulating layer is deposited, then etched to the proper shape and thickness.

Abstract: A trench MOSFET is formed by creating a trench in a semiconductor substrate, then forming a barrier layer over a portion of the side wall of the trench. A thick insulating layer is deposited in the bottom of the trench. The barrier layer is selected such that the thick insulating layer deposits in the bottom of the trench at a faster rate than the thick insulating layer deposits on the barrier layer. Embodiments of the present invention avoid stress and reliability problems associated with thermal growth of insulating layers, and avoid problems with control of the shape and thickness of the thick insulating layer encountered when a thick insulating layer is deposited, then etched to the proper shape and thickness.

Abstract: A method includes receiving information identifying financial withholdings associated with an organization. The method also includes identifying a due date associated with the financial withholdings. In addition, the method includes facilitating a payment associated with the withholdings by the identified due date.