Abstract: A method fabricating a GaN based sensor including: forming a gate dielectric layer over a GaN hetero-structure including a GaN layer formed over a substrate and a first barrier layer formed over the GaN layer; forming a first mask over the gate dielectric layer; etching the gate dielectric layer and the first barrier layer through the first mask, thereby forming source and drain contact openings; removing the first mask; forming a metal layer over the gate dielectric layer, wherein the metal layer extends into the source and drain contact openings; forming a second mask over the metal layer; etching the metal layer, the gate dielectric layer and the GaN heterostructure through the second mask, wherein a region of the GaN heterostructure is exposed; and thermally activating the metal layer in the source and drain contact openings. The gate dielectric may exhibit a sloped profile, and dielectric spacers may be formed.

Abstract: A method fabricating a GaN based sensor including: forming a gate dielectric layer over a GaN hetero-structure including a GaN layer formed over a substrate and a first barrier layer formed over the GaN layer; forming a first mask over the gate dielectric layer; etching the gate dielectric layer and the first barrier layer through the first mask, thereby forming source and drain contact openings; removing the first mask; forming a metal layer over the gate dielectric layer, wherein the metal layer extends into the source and drain contact openings; forming a second mask over the metal layer; etching the metal layer, the gate dielectric layer and the GaN heterostructure through the second mask, wherein a region of the GaN heterostructure is exposed; and thermally activating the metal layer in the source and drain contact openings. The gate dielectric may exhibit a sloped profile, and dielectric spacers may be formed.

Abstract: A method fabricating a GaN based sensor including: forming a gate dielectric layer over a GaN hetero-structure including a GaN layer formed over a substrate and a first barrier layer formed over the GaN layer; forming a first mask over the gate dielectric layer; etching the gate dielectric layer and the first barrier layer through the first mask, thereby forming source and drain contact openings; removing the first mask; forming a metal layer over the gate dielectric layer, wherein the metal layer extends into the source and drain contact openings; forming a second mask over the metal layer; etching the metal layer, the gate dielectric layer and the GaN heterostructure through the second mask, wherein a region of the GaN heterostructure is exposed; and thermally activating the metal layer in the source and drain contact openings. The gate dielectric may exhibit a sloped profile, and dielectric spacers may be formed.

Abstract: A method fabricating a GaN based sensor including: forming a gate dielectric layer over a GaN hetero-structure including a GaN layer formed over a substrate and a first barrier layer formed over the GaN layer; forming a first mask over the gate dielectric layer; etching the gate dielectric layer and the first barrier layer through the first mask, thereby forming source and drain contact openings; removing the first mask; forming a metal layer over the gate dielectric layer, wherein the metal layer extends into the source and drain contact openings; forming a second mask over the metal layer; etching the metal layer, the gate dielectric layer and the GaN heterostructure through the second mask, wherein a region of the GaN heterostructure is exposed; and thermally activating the metal layer in the source and drain contact openings. The gate dielectric may exhibit a sloped profile, and dielectric spacers may be formed.

Abstract: A wireless transceiver contains a receiver and a transmitter. The receiver is operable in single-input single-output (SISO) mode as well as multiple-input multiple-output (MIMO) mode, and contains a pair of in-phase and quadrature signal processing chains and a baseband processor. In SISO mode, each of the processing chains in the pair is connected to receive a same modulated signal as input, and generates respective baseband outputs. The baseband processor processes the baseband outputs to demodulate the modulated signal. In MIMO mode, the signal processing chains in the pair receive different modulated signals and generate corresponding down-converted signals. The baseband processor processes the down-converted signals to demodulate the respective modulated signals received by the receiver. Corresponding techniques to provide MIMO in addition to SISO capabilities are implemented in the transmitter also.

Abstract: A retrofitted credit card including a certified smart card chip, a display and retrofitted emulation circuitry operative to enable the certified smart card chip to communicate information to the display notwithstanding that the certified smart card chip is configured for communication only with an external read/write device.

Abstract: A system for authentication is provided which comprises an NFC card containing authentication data and a mobile communication device which can communicate with the card and a remote authentication server. The card, when activated, transmits authentication data stored on the card to the remote authentication server via the mobile communication device. The authentication server then transmits an authentication result to the mobile communication device. The authentication result can be used to complete a transaction such as a financial transaction. Either the card or the mobile communication device can contain the transaction data such as the user's account information needed to complete the transaction. The system can be used for secure remote access and re mote payment. A method of using the card is also provided.

Abstract: A retrofitted credit card including a certified smart card chip, a display and retrofitted emulation circuitry operative to enable the certified smart card chip to communicate information to the display notwithstanding that the certified smart card chip is configured for communication only with an external read/write device.

Abstract: A retrofitted credit card including a certified smart card chip, a display and retrofitted emulation circuitry operative to enable the certified smart card chip to communicate information to the display notwithstanding that the certified smart card chip is configured for communication only with an external read/write device.

Abstract: A retrofitted credit card including a certified smart card chip, a display and retrofitted emulation circuitry operative to enable the certified smart card chip to communicate information to the display notwithstanding that the certified smart card chip is configured for communication only with an external read/write device.

Abstract: A wireless transceiver contains a receiver and a transmitter. The receiver is operable in single-input single-output (SISO) mode as well as multiple-input multiple-output (MIMO) mode, and contains a pair of in-phase and quadrature signal processing chains and a baseband processor. In SISO mode, each of the processing chains in the pair is connected to receive a same modulated signal as input, and generates respective baseband outputs. The baseband processor processes the baseband outputs to demodulate the modulated signal. In MIMO mode, the signal processing chains in the pair receive different modulated signals and generate corresponding down-converted signals. The baseband processor processes the down-converted signals to demodulate the respective modulated signals received by the receiver. Corresponding techniques to provide MIMO in addition to SISO capabilities are implemented in the transmitter also.