Patents by Inventor Rong-Gen WU

Rong-Gen WU has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor structures and methods of forming the same
    Patent number: 10431465
    Abstract: A method of fabricating a semiconductor structure includes providing a semiconductor substrate, forming a trench in the semiconductor substrate, overfilling the trench with a first semiconductor material, wherein the first semiconductor material does not have a dopant, forming a second semiconductor material on the first semiconductor material, wherein the second semiconductor material contains a dopant, and performing a thermal treatment so that the dopant in the second semiconductor material diffuses into the first semiconductor material to form a doped third semiconductor material in the trench.
    Type: Grant
    Filed: September 18, 2017
    Date of Patent: October 1, 2019
    Assignee: VANGUARD INTERNATIONAL SEMICONDUCTOR CORPORATION
    Inventors: Chih-Ming Kao, Rong-Gen Wu, Han-Wen Chang, Chun-Hsu Chen, Yu-Chun Ho
  • SEMICONDUCTOR STRUCTURES AND METHODS OF FORMING THE SAME
    Publication number: 20190088484
    Abstract: A method of fabricating a semiconductor structure includes providing a semiconductor substrate, forming a trench in the semiconductor substrate, overfilling the trench with a first semiconductor material, wherein the first semiconductor material does not have a dopant, forming a second semiconductor material on the first semiconductor material, wherein the second semiconductor material contains a dopant, and performing a thermal treatment so that the dopant in the second semiconductor material diffuses into the first semiconductor material to form a doped third semiconductor material in the trench.
    Type: Application
    Filed: September 18, 2017
    Publication date: March 21, 2019
    Applicant: Vanguard International Semiconductor Corporation
    Inventors: Chih-Ming KAO, Rong-Gen WU, Han-Wen CHANG, Chun-Hsu CHEN, Yu-Chun HO
  • Contact plug and method for manufacturing the same
    Patent number: 9263281
    Abstract: A method for manufacturing a contact plug is provided. The method includes providing a silicon substrate having at least one opening. A titanium layer is conformably formed in the opening. A first barrier layer is conformably formed on the titanium layer in the opening. A rapid thermal process is performed on the titanium layer and the first barrier layer. After performing the rapid thermal process, a second barrier layer is conformably formed on the first barrier layer in the opening.
    Type: Grant
    Filed: August 30, 2013
    Date of Patent: February 16, 2016
    Assignee: Vanguard International Semiconductor Corporation
    Inventors: Yi-Tsung Jan, Peng-Fei Wu, Chih-Ming Kao, You-Cheng Liau, Wen-Jen Chuang, Rong-Gen Wu, Huan-Yu Chien, Ting-Yu Kuo, Su-Chen Lin
  • CONTACT PLUG AND METHOD FOR MANUFACTURING THE SAME
    Publication number: 20150061082
    Abstract: A method for manufacturing a contact plug is provided. The method includes providing a silicon substrate having at least one opening. A titanium layer is conformably formed in the opening. A first barrier layer is conformably formed on the titanium layer in the opening. A rapid thermal process is performed on the titanium layer and the first barrier layer. After performing the rapid thermal process, a second barrier layer is conformably formed on the first barrier layer in the opening.
    Type: Application
    Filed: August 30, 2013
    Publication date: March 5, 2015
    Applicant: VANGUARD INTERNATIONAL SEMICONDUCTOR CORPORATION
    Inventors: Yi-Tsung JAN, Peng-Fei WU, Chih-Ming KAO, You-Cheng LIAU, Wen-Jen CHUANG, Rong-Gen WU, Huan-Yu CHIEN, Ting-Yu KUO, Su-Chen LIN