Patents by Inventor Rong-I Peng

Rong-I Peng has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • High contrast alignment marks having flexible placement
    Patent number: 6577020
    Abstract: High contrast alignment marks that can be flexibly located on a semiconductor wafer are disclosed. The wafer has a first layer and a second layer. The first layer has a light-dark intensity and a reflectivity. The second layer is over the first layer, and has a light-dark intensity substantially lighter than that of the first layer, and a higher reflectivity than that of the first layer. The first layer may be patterned to further darken it. The second layer contrasts visibly to the first layer, and is patterned to form at least one or more alignment marks within the second layer. The first layer may be a metallization layer, such as titanium nitride, whereas the second layer may be a metallization layer, such as aluminum or copper.
    Type: Grant
    Filed: October 11, 2001
    Date of Patent: June 10, 2003
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd
    Inventors: Chun-Yen Huang, Chien-Ye Lee, Ju-Bin Fu, Rong-I Peng
  • HIGH CONTRAST ALIGNMENT MARKS HAVING FLEXIBLE PLACEMENT
    Publication number: 20030071369
    Abstract: High contrast alignment marks that can be flexibly located on a semiconductor wafer are disclosed. The wafer has a first layer and a second layer. The first layer has a light-dark intensity and a reflectivity. The second layer is over the first layer, and has a light-dark intensity substantially lighter than that of the first layer, and a higher reflectivity than that of the first layer. The first layer may be patterned to further darken it. The second layer contrasts visibly to the first layer, and is patterned to form at least one or more alignment marks within the second layer. The first layer may be a metallization layer, such as titanium nitride, whereas the second layer may be a metallization layer, such as aluminum or copper.
    Type: Application
    Filed: October 11, 2001
    Publication date: April 17, 2003
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Chun-Yen Huang, Chien-Ye Lee, Ju-Bin Fu, Rong-I Peng