Patents by Inventor Rong Ren

Rong Ren has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11987579
    Abstract: Described are niclosamide analogue compounds, pharmaceutical compositions thereof, and method of using the corner pounds and compositions for treating a disease associated with dysregulation of the Wnt/Frizzled signaling pathway, such as cancer, fatty liver, antibiotic resistance, and viral infection. The disclosed compounds and compositions may also be used for modulating mitochondrial function and for treating certain non-cancer diseases and/or diorders, such as diabetes, fibrotic disease, primary sclerosing cholangitis.
    Type: Grant
    Filed: July 30, 2019
    Date of Patent: May 21, 2024
    Assignee: Duke University
    Inventors: Robert A. Mook, Wei Chen, Jiangbo Wang, Xiu-Rong Ren, Herbert Kim Lyerly
  • Patent number: 11515307
    Abstract: A method of making a semiconductor device includes: providing a substrate; forming an insulating layer on the substrate; forming a first trench in the insulating layer; forming a first semiconductor layer in the first trench; and removing a portion of the insulating layer to expose the first semiconductor layer.
    Type: Grant
    Filed: June 4, 2020
    Date of Patent: November 29, 2022
    Assignees: National Applied Research Laboratories, EPISTAR Corporation
    Inventors: Shih-Pang Chang, Guang-Li Luo, Szu-Hung Chen, Wen-Kuan Yeh, Jen-Inn Chyi, Meng-Yang Chen, Rong-Ren Lee, Shih-Chang Lee, Ta-Cheng Hsu
  • Patent number: 11189754
    Abstract: A semiconductor substrate is provided in the present disclosure. The semiconductor substrate includes a first semiconductor layer and a second semiconductor layer on the first semiconductor layer. The first semiconductor layer has a first lattice constant (L1) and the second semiconductor layer has a second lattice constant (L2). A ratio of a difference (L2-L1) between the second lattice constant (L2) and the first lattice constant (L1) to the first lattice constant (L1) is greater than 0.036.
    Type: Grant
    Filed: June 25, 2019
    Date of Patent: November 30, 2021
    Assignee: Epistar Corporation
    Inventors: Meng-Yang Chen, Rong-Ren Lee
  • Publication number: 20210179615
    Abstract: Described are niclosamide analogue compounds, pharmaceutical compositions thereof, and method of using the corner pounds and compositions for treating a disease associated with dysregulation of the Wnt/Frizzled signaling pathway, such as cancer, fatty liver, antibiotic resistance, and viral infection. The disclosed compounds and compositions may also be used for modulating mitochondrial function and for treating certain non-cancer diseases and/or diorders, such as diabetes, fibrotic disease, primary sclerosing cholangitis.
    Type: Application
    Filed: July 30, 2019
    Publication date: June 17, 2021
    Inventors: Robert A. Mook, Wei Chen, Jiangbo Wang, Xiu-Rong Ren, Herbert Kim Lyerly
  • Patent number: 10905665
    Abstract: Described are methods of treating a disease associated with dysregulation of the Wnt/Frizzled signaling pathway. The methods include identifying subjects in need of therapy, administering inhibitors of the Wnt/Frizzled signaling pathway, pharmaceutical compositions including the inhibitors, and methods of using the compounds and compositions for treating cancer, bacterial and viral infection, lupus, type II diabetes, nonalcoholic steatohepatitis (NASH) and nonalcoholic fatty liver disease (NAFLD) in a subject.
    Type: Grant
    Filed: June 24, 2016
    Date of Patent: February 2, 2021
    Assignee: Duke University
    Inventors: Wei Chen, Robert A. Mook, Jr., Jiangbo Wang, Xiu-rong Ren, Minyong Chen, Lawrence S. Barak, Herbert Kim Lyerly, David Needham
  • Publication number: 20200303377
    Abstract: A method of making a semiconductor device includes: providing a substrate; forming an insulating layer on the substrate; forming a first trench in the insulating layer; forming a first semiconductor layer in the first trench; and removing a portion of the insulating layer to expose the first semiconductor layer.
    Type: Application
    Filed: June 4, 2020
    Publication date: September 24, 2020
    Inventors: Shih-Pang Chang, Guang-Li Luo, Szu-Hung Chen, Wen-Kuan Yeh, Jen-Inn Chyi, Meng-Yang Chen, Rong-Ren Lee, Shih-Chang Lee, Ta-Cheng Hsu
  • Patent number: 10749077
    Abstract: An optoelectronic device includes a semiconductor stack including a first surface and a second surface opposite to the first surface; a first contact layer on the first surface; and a second contact layer on the second surface. The second contact layer is not overlapped with the first contact layer in a vertical direction. The second contact layer includes a plurality of dots separating to each other and formed of semiconductor material.
    Type: Grant
    Filed: December 20, 2018
    Date of Patent: August 18, 2020
    Assignee: EPISTAR CORPORATION
    Inventors: Chun-Yu Lin, Yung-Fu Chang, Rong-Ren Lee, Kuo-Feng Huang, Cheng-Long Yeh, Yi-Ching Lee, Ming-Siang Huang, Ming-Tzung Liou
  • Patent number: 10727231
    Abstract: A heterogeneously integrated semiconductor device includes a substrate comprising a first material; a recess formed within the substrate and having a bottom portion with a first width, a top portion with a second width and a middle portion with a third width larger than the first width and the second width; and a first semiconductor layer filled in the bottom portion and including a second material different from the first material.
    Type: Grant
    Filed: October 12, 2018
    Date of Patent: July 28, 2020
    Assignees: National Applied Research Laboratories, EPISTAR Corporation
    Inventors: Shih-Pang Chang, Guang-Li Luo, Szu-Hung Chen, Wen-Kuan Yeh, Jen-Inn Chyi, Meng-Yang Chen, Rong-Ren Lee, Shih-Chang Lee, Ta-Cheng Hsu
  • Patent number: 10600938
    Abstract: A light-emitting device includes: a light-emitting stack including a first active layer emitting a first light having a first peak wavelength; a diode emitting a second light having a second peak wavelength between 800 nm and 1900 nm; and a tunneling junction between the diode and the light-emitting stack, wherein the tunneling junction includes a first tunneling layer and a second tunneling layer on the first tunneling layer, the first tunneling layer has a band gap and a thickness of the first tunneling layer is greater than a thickness of the second tunneling layer.
    Type: Grant
    Filed: May 18, 2018
    Date of Patent: March 24, 2020
    Assignee: EPISTAR CORPORATION
    Inventors: Chih-Chiang Lu, Yi-Chieh Lin, Rong-Ren Lee, Yu-Ren Peng, Ming-Siang Huang, Ming-Ta Chin, Yi-Ching Lee
  • Patent number: 10580937
    Abstract: An optoelectronic device includes a semiconductor structure having a first side and a second side opposite to the first side, a first pad at the first side, a first finger connected to the electrode pad and having a first width, an insulating layer at the second side and comprising a first part under the first finger, the first part having a bottom surface with a second width larger than the first width and a side surface inclined to the bottom surface, and a contact layer covering the bottom surface and the side surface.
    Type: Grant
    Filed: December 20, 2018
    Date of Patent: March 3, 2020
    Assignee: EPISTAR CORPORATION
    Inventors: Chun-Yu Lin, Yung-Fu Chang, Rong-Ren Lee, Kuo-Feng Huang, Cheng-Long Yeh, Yi-Ching Lee, Ming-Siang Huang, Ming-Tzung Liou
  • Patent number: 10566498
    Abstract: A semiconductor light-emitting device comprises an epitaxial structure comprising an main light-extraction surface, a lower surface opposite to the main light-extraction surface, a side surface connecting the main light-extraction surface and the lower surface, a first portion and a second portion between the main light-extraction surface and the first portion, wherein a concentration of a doping material in the second portion is higher than that of the doping material in the first portion and, in a cross-sectional view, the second portion comprises a first width near the main light-extraction surface and second width near the lower surface, and the first width is smaller than the second width.
    Type: Grant
    Filed: July 24, 2018
    Date of Patent: February 18, 2020
    Assignee: EPISTAR CORPORATION
    Inventors: Hsin-Chih Chiu, Shih-I Chen, You-Hsien Chang, Hao-Min Ku, Ching-Yuan Tsai, Kuan-Chih Kuo, Chih-Hung Hsiao, Rong-Ren Lee
  • Patent number: 10562864
    Abstract: Compounds and pharmaceutical compositions that down-regulate immune checkpoints such as PD-1, PD-L1 and CTLA-4 are provided. Also provided are methods of treating a disease by down-regulating immune checkpoints such as PD-1, PD-L1 and CTLA-4. The methods are useful for treating cancer and viral infection in a subject.
    Type: Grant
    Filed: November 14, 2018
    Date of Patent: February 18, 2020
    Assignee: Duke University
    Inventors: Wei Chen, Herbert Kim Lyerly, Xiu-rong Ren, Jiangbo Wang, Hongtao Guo, Amy Hobeika, Robert A. Mook, Jr.
  • Publication number: 20200038350
    Abstract: Described are methods of treating a disease associated with dysregulation of the Wnt/Frizzled signaling pathway. The methods include identifying subjects in need of therapy, administering inhibitors of the Wnt/Frizzled signaling pathway, pharmaceutical compositions including the inhibitors, and methods of using the compounds and compositions for treating cancer, bacterial and viral infection, lupus, type II diabetes, nonalcoholic steatohepatitis (NASH) and nonalcoholic fatty liver disease (NAFLD) in a subject.
    Type: Application
    Filed: June 24, 2016
    Publication date: February 6, 2020
    Inventors: Wei Chen, Robert A. Mook, JR., Jiangbo Wang, Xiu-rong Ren, Minyong Chen, Lawrence S. Barak, Herbert Kim Lyerly, David Needham
  • Publication number: 20190393380
    Abstract: A semiconductor substrate is provided in the present disclosure. The semiconductor substrate includes a first semiconductor layer and a second semiconductor layer on the first semiconductor layer. The first semiconductor layer has a first lattice constant (L1) and the second semiconductor layer has a second lattice constant (L2). A ratio of a difference (L2-L1) between the second lattice constant (L2) and the first lattice constant (L1) to the first lattice constant (L1) is greater than 0.036.
    Type: Application
    Filed: June 25, 2019
    Publication date: December 26, 2019
    Inventors: Meng-Yang CHEN, Rong-Ren LEE
  • Patent number: 10367118
    Abstract: A light-emitting diode, comprises an active layer for emitting a light ray; an upper semiconductor stack on the active layer, wherein the upper semiconductor stack comprises a window layer; a reflector; and a lower semiconductor stack between the active layer and the reflector; wherein the thickness of the window layer is small than or equal to 3 ?m, and the thickness of the lower semiconductor stack is small than or equal to 1 ?m.
    Type: Grant
    Filed: September 15, 2016
    Date of Patent: July 30, 2019
    Assignee: EPISTAR CORPORATION
    Inventors: Yu-Ren Peng, Tzu-Chieh Hsu, Shih-I Chen, Rong-Ren Lee, Hsin-Chan Chung, Wen-Luh Liao, Yi-Chieh Lin
  • Publication number: 20190148599
    Abstract: An optoelectronic device includes a semiconductor stack including a first surface and a second surface opposite to the first surface; a first contact layer on the first surface; and a second contact layer on the second surface. The second contact layer is not overlapped with the first contact layer in a vertical direction. The second contact layer includes a plurality of dots separating to each other and formed of semiconductor material.
    Type: Application
    Filed: December 20, 2018
    Publication date: May 16, 2019
    Inventors: Chun-Yu LIN, Yung-Fu CHANG, Rong-Ren LEE, Kuo-Feng HUANG, Cheng-Long YEH, Yi-Ching LEE, Ming-Siang HUANG, Ming-Tzung LIOU
  • Patent number: D1013195
    Type: Grant
    Filed: April 20, 2022
    Date of Patent: January 30, 2024
    Assignees: Shenzhen Rulju Technology Co., Ltd, Dongguan Aichuntang Industrial Co., Ltd.
    Inventors: Yaling Jiang, Rong Ren
  • Patent number: D1013196
    Type: Grant
    Filed: April 20, 2022
    Date of Patent: January 30, 2024
    Assignee: Shenzhen Ruiju Technology Co., Ltd
    Inventors: Yaling Jiang, Rong Ren
  • Patent number: D1013197
    Type: Grant
    Filed: April 26, 2022
    Date of Patent: January 30, 2024
    Assignees: Shenzhen Ruiju Technology Co., Ltd, Dongguan Aichuntang Industrial Co., Ltd.
    Inventors: Yaling Jiang, Rong Ren
  • Patent number: D1068097
    Type: Grant
    Filed: September 26, 2023
    Date of Patent: March 25, 2025
    Assignee: Shenzhen Ruiju Technology Co., Ltd.
    Inventor: Rong Ren