Patents by Inventor Rong Shan

Rong Shan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Ferromagnetic tunnel junction structure, and magneto-resistive element and spintronics device each using same
    Patent number: 8575674
    Abstract: Disclosed is a ferromagnetic tunnel junction structure which is characterized by having a tunnel barrier layer that comprises a non-magnetic material having a spinel structure. The ferromagnetic tunnel junction structure is also characterized in that the non-magnetic material is substantially MgAl2O4. The ferromagnetic tunnel junction is also characterized in that at least one of the ferromagnetic layers comprises a Co-based full Heusler alloy having an L21 or B2 structure. The ferromagnetic tunnel junction structure is also characterized in that the Co-based full Heusler alloy comprises a substance represented by the following formula: Co2FeAlxSi1-x (0?x?1). Also disclosed are a magnetoresistive element and a spintronics device, each of which utilizes the ferromagnetic tunnel junction structure and can achieve a high TMR value, that cannot be achieved by employing conventional tunnel barrier layers other than a MgO barrier.
    Type: Grant
    Filed: April 15, 2010
    Date of Patent: November 5, 2013
    Assignee: National Institute for Materials Science
    Inventors: Hiroaki Sukegawa, Koichiro Inomata, Rong Shan, Masaya Kodzuka, Kazuhiro Hono, Takao Furubayashi, Wenhong Wang
  • FERROMAGNETIC TUNNEL JUNCTION STRUCTURE, AND MAGNETO-RESISTIVE ELEMENT AND SPINTRONICS DEVICE EACH USING SAME
    Publication number: 20120091548
    Abstract: Disclosed is a ferromagnetic tunnel junction structure which is characterized by having a tunnel barrier layer that comprises a non-magnetic material having a spinel structure. The ferromagnetic tunnel junction structure is also characterized in that the non-magnetic material is substantially MgAl2O4. The ferromagnetic tunnel junction is also characterized in that at least one of the ferromagnetic layers comprises a Co-based full Heusler alloy having an L21 or B2 structure. The ferromagnetic tunnel junction structure is also characterized in that the Co-based full Heusler alloy comprises a substance represented by the following formula: Co2FeAlxSi1-x (0?x?1). Also disclosed are a magnetoresistive element and a spintronics device, each of which utilizes the ferromagnetic tunnel junction structure and can achieve a high TMR value, that cannot be achieved by employing conventional tunnel barrier layers other than a MgO barrier.
    Type: Application
    Filed: April 15, 2010
    Publication date: April 19, 2012
    Inventors: Hiroaki Sukegawa, Koichiro Inomata, Rong Shan, Masaya Kodzuka, Kazuhiro Hono, Takao Furubayashi, Wenhong Wang