Patents by Inventor Rong-Tang CHEN

Rong-Tang CHEN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Body-contact metal-oxide-semiconductor field effect transistor device
    Patent number: 9620640
    Abstract: The invention provides a body-contact metal-oxide-semiconductor field effect transistor (MOSFET) device. The body-contact MOSFET device includes a substrate. An active region is disposed on the substrate. A gate strip is extended along a first direction disposed on a first portion of the active region. A source doped region and a drain doped region are disposed on a second portion and a third portion of the active region, adjacent to opposite sides of the gate strip. The opposite sides of the gate strip are extended along the first direction. A body-contact doped region is disposed on a fourth portion of the active region. The body-contact doped region is separated from the gate strip by a fifth portion of the active region. The fifth portion is not covered by any silicide features.
    Type: Grant
    Filed: August 4, 2014
    Date of Patent: April 11, 2017
    Assignee: MEDIATEK INC.
    Inventors: Cheng-Chou Hung, Tung-Hsing Lee, Bernard Mark Tenbroek, Rong-Tang Chen
  • BODY-CONTACT METAL-OXIDE-SEMICONDUCTOR FIELD EFFECT TRANSISTOR DEVICE
    Publication number: 20150123206
    Abstract: The invention provides a body-contact metal-oxide-semiconductor field effect transistor (MOSFET) device. The body-contact MOSFET device includes a substrate. An active region is disposed on the substrate. A gate strip is extended along a first direction disposed on a first portion of the active region. A source doped region and a drain doped region are disposed on a second portion and a third portion of the active region, adjacent to opposite sides of the gate strip. The opposite sides of the gate strip are extended along the first direction. A body-contact doped region is disposed on a fourth portion of the active region. The body-contact doped region is separated from the gate strip by a fifth portion of the active region. The fifth portion is not covered by any silicide features.
    Type: Application
    Filed: August 4, 2014
    Publication date: May 7, 2015
    Inventors: Cheng-Chou HUNG, Tung-Hsing LEE, Bernard Mark TENBROEK, Rong-Tang CHEN