Abstract: Methods and apparatus for creating a dual metal interconnect on a substrate. In some embodiments, a first liner of a first nitride material is deposited into at least one 1X feature and at least one wider than 1X feature, the first liner has a thickness of less than or equal to approximately 12 angstroms; a second liner of a first metal material is deposited into the at least one 1X feature and at least one wider than 1X feature; the first metal material is reflowed such that the at least one 1X feature is filled with the first metal material and the at least one wider than 1X feature remains unfilled with the first metal material; a second metal material is deposited on the first metal material, and the second metal material is reflowed such that the at least one wider than 1X feature is filled with the second metal material.

Abstract: The disclosure provides a universal platform including a bottom base, an upper cover, a fixed base, a rotating base, at least one locking member, and at least one elastic member. The upper cover is disposed on the bottom base and has a through hole. The fixed base is disposed between the upper cover and has a concave. The concave is aligned to the through hole to form a receiving space. The rotating base is disposed in the receiving space and partially protrudes outside of the through hole. The at least one locking member is connected to the upper cover through the fixed base. The at least one elastic member is disposed between the fixed base and the at least one locking member.