Abstract: An automatic target image acquisition and calibration system for application in a defect inspection system is disclosed. During the defect inspection system working normally, the automatic target image acquisition and calibration system is configured to find a recognition structure from an article under inspection, and then determines a relative position and a relative 3D coordinate if the article. Therefore, a robotic arm is controlled to carry a camera to precisely face each of a plurality of inspected surfaces of the article, such that a plurality of article images are acquired by the camera. It is worth explaining that, during the defect inspection of the article, there is no need to modulate an image acquiring height and an image acquiring angle of the camera and an illumination of a light source.

Abstract: A vertical cavity surface emitting laser semiconductor chip including a vertical cavity surface emitting laser (VCSEL) formed on a substrate, a photodetector, integrated with the vertical cavity surface emitting laser for automatic power control (APC) of the vertical cavity surface emitting laser and a driver circuit, integrated with the vertical cavity surface emitting laser and the photodetector. The VCSEL, photodetector and driver circuit are integrated by utilizing a monolithic polysilicon layer. The driver circuit is characterized as a CMOS driver circuit, capable of receiving feedback from the photodetector and adjusting the output power of the vertical cavity surface emitting laser in response to the feedback, thus achieving APC of the VCSEL.

Abstract: A VCSEL for high power single mode operation and method of fabrication including a substrate element, a first stack of distributed Bragg reflectors disposed on a surface of the substrate element, an active region lattice matched to a surface of the first stack of distributed Bragg reflectors, and a second stack of distributed Bragg reflectors lattice matched to a surface of the active region. The VCSEL structure includes an isolation layer formed on the second stack of distributed Bragg reflectors. The isolation layer is formed of a dielectric material or insulating semiconductor material having an index of refraction greater than the first and second stacks of distributed Bragg reflectors and thereby defining an anti-guiding VCSEL structure. An electrical contact is coupled to a surface of the second stack of distributed Bragg reflectors and an electrical contact is positioned a surface of the substrate element.

Abstract: A full color organic light emitting backlight device for liquid crystal display applications defined by a first OLED panel, designed to emit light in a red bandwidth, a second OLED panel, positioned adjacent the first OLED panel and designed to emit light in a green bandwidth, and a third OLED panel, positioned adjacent the second OLED panel and designed to emit light in a blue bandwidth. The light emitting device having positioned on an uppermost surface a liquid crystal display. The device intended for incorporation into portable electronic devices. The device is fabricated to achieve a full color image using field sequential color techniques.

Abstract: An OED with a first microcavity including a first transparent spacer positioned adjacent the diode light output and a first mirror stack positioned on the first spacer to reflect light back into the OED and to define an optical length of the first microcavity. The optical length of the first microcavity being such that light emitted from the first microcavity has a first spectrum. A second microcavity including a second transparent spacer positioned adjacent the first microcavity and a second mirror stack positioned on the second spacer to reflect light toward the first microcavity and to define an optical length of the second microcavity. The optical length of the second microcavity being such that light emitted from the second microcavity has a second spectrum. Additional microcavities can be placed in the structure to further enhance and alter the light spectrum.

Abstract: An active matrix OED array includes an array area defined on a semiconductor substrate defining rows and columns of pixels and driver areas spaced from the array area with driver circuits including row drivers coupled to row buses and column drivers coupled to column buses formed in the driver areas. An active control circuit and an OED are formed in each pixel of the array area and coupled to a row and a column bus adjacent each pixel. A second substrate is formed of light transmissive material and includes externally accessible electrical connectors coupled to the driver circuits. The semiconductor substrate includes a first bump pad encircling the array area and the second substrate includes a mating second bump pad with the first and second bump pads engaged to seal the array area.

Abstract: A method of fabricating an active matrix LED array includes forming layers of material on a substrate, which layers cooperate to emit light when activated. Row and column dividers are formed in the layers to divide the layers into an array of LEDs arranged in rows and columns. One FET is formed on the row dividers in association with each LED and a source of each FET is connected to an anode of the associated LED. Row and column buses are formed on the row and column dividers, respectively, and the drain of each FET is connected to an adjacent row bus with the gate of each FET being connected to an adjacent column bus. A cathode for each LED is connected as a common terminal for all of the LEDs in the array.

Abstract: A semiconductor laser package and method of fabrication including a vertical cavity surface emitting laser and a power monitoring system, such as a photodetector mounted on a mounting base. An optical element, such as a beam splitter, formed integral with the mounting base or as a separate element positioned on the mounting base in optical alignment with an emission generated by the vertical cavity surface emitting laser. The optical element characterized by reflecting a portion of the emission in the direction of the photodetector and allowing a portion of the emission to pass therethrough. An overmolded housing is positioned on the mounting base to enclose the vertical cavity surface emitting laser, the photodetector and the optical element.

Abstract: An integrated matrix of light emitting devices includes a plurality of isolated semiconductor LEDs positioned in a matrix of rows and columns on the surface of a substrate. A plurality of column buses, one each positioned adjacent each column of semiconductor LEDs, is provided with each of the column buses being connected to a first terminal of each semiconductor LED in the adjacent column of semiconductor LEDs and each of the column buses providing an exposed planar surface. A plurality of OEDs is positioned on the exposed planar surface of each column bus with a first terminal of each OED connected to the column bus.

Abstract: An integrated electro-optical package including an array composed of a substrate having defined thereon a plurality of unit cells, composed of active and inactive areas. The substrate having positioned thereon a major surface, a plurality of sub-arrays and driver/control circuits. The sub-arrays, defining the active area formed within each unit cell, and being composed of a plurality of light emitting devices. The driver/control circuits mounted to the substrate within the inactive area of each unit cell. The electro-optical package fabricated to allow for scanning of the active area of each unit cell to create a resultant integrated image of increased resolution, without an increase in the number of pixels formed by the light emitting devices of the sub-arrays.

Abstract: A method of fabricating a monolithically integrated LED array and driving circuitry includes sequentially forming overlying layers of material on the surface of a semiconductor substrate, the layers cooperating to emit light when activated. An insulating layer is formed on the layers and the layers are isolated into an array area and driver circuitry areas with row and column dividers dividing the array area into an array of LEDs arranged in rows and columns. Row and column driver circuits are formed on the insulating layer in the driver circuitry areas and row and column buses individually couple each LED in the array to row and column driver circuits.

Abstract: A visual display system, composed of an array of light emitting devices, forming an image source, a phase spatial light modulator scanner, driver/control circuitry and an optical magnification system. The display system being enclosed within a housing, thereby forming an optical magnifier. The phase spatial light modulator scanner is operative in either a transmissive mode or a reflective mode. In operation, an external stimulus, such as a voltage, is applied to the scanner, thereby changing the phase of light emitted therethrough. The scanning action enhances display resolution of the generated resultant image without an increase in the number of pixels of the image source. The phase spatial light modulator scanner operates by scanning sub-pixels, pixel groups, and/or sub-arrays of the image source.

Abstract: A phase spatial light modulator composed of a liquid crystal memory cell and a liquid crystal polarization switch. The liquid crystal memory cell having phase information recorded during the fabrication process thereby affecting the liquid crystal material contained within the cell. The liquid crystal polarization switch capable of perpendicularly rotating the polarization of light impinging upon the liquid crystal polarization switch, prior to passage through the liquid crystal memory cell in response to an applied voltage.

Abstract: Monolithic integrated transistors and a light emitting diode matrix epitaxially grown on a semiconductor substrate. The matrix includes a plurality of LEDs organized into rows and columns, the LEDs being formed of layers of semiconductor material epitaxially grown on the substrate. A row driver for each row includes a transistor coupled to the matrix and a column driver for each column includes a complementary transistor coupled to the matrix. The transistor and the complementary transistor are each an HBT including layers of semiconductor material positioned on the semiconductor material forming the matrix.

Abstract: A method of fabricating an LED array and stacked driving circuitry includes sequentially forming layers of material on the surface of a substrate, the layers cooperating to emit light when activated. An insulating layer is positioned on the layers and divided into LEDs arranged in an array of rows and columns. Row and column driver circuits are formed on the insulating layer overlying the array by patterning portions of recrystallized amorphous silicon on the insulating layer, depositing a gate insulator layer and a gate metal layer on each of the portions to form an MOS gate, implanting a source and drain in each of the portions, using the MOS gate as a self-aligned mask, and forming contacts for the power terminals and the MOS gate, and coupling each LED in the array to the row and column driver circuits.

Abstract: A matrix including a plurality of light emitting devices organized into a plurality of rows of first contacts and columns of second contacts. Row/column decoding switches each coupled to a number of individual rows/columns and to a number of row/column address lines for selecting an addressed one of the number of individual rows/columns, and to an individual row/column data lead for selecting a row/column decoding switch. The matrix and row and column switches are integrated onto a common substrate. A programmable voltage source is coupled to the column decoding switches by the column data leads and a programmable current sink is coupled to the row decoding switches by the row data leads.

Abstract: A new gas distributor 31 provides an extremely uniform gas across a wide cross section distance. An OMVPE reactor equipped with this distributor, a unique low volume quartz insert, a load-locked growth chamber and a low pressure operation scheme provide a reactor system capable of growing extremely uniform GaAs and AlGaAs epilayers across four two-inch wafers or one three to four inch wafer with atomic layer abruptness capablity. The performance of such an OMVPE reactor provides superior morphology and throughout compared to conventional OMVPE reactors with equivalent performance to MBE. Since the gas distributor is capable of distributing an extremely uniform gas across a wide cross-section distance, it can also be employed in other types of OMVPE reactors to improve the material uniformity.