Patents by Inventor Rong-Yuan Hsieh

Rong-Yuan Hsieh has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • METHOD OF FORMING SI TIP BY SINGLE ETCHING PROCESS AND ITS APPLICATION FOR FORMING FLOATING GATE
    Publication number: 20070235413
    Abstract: The invention provides a method of forming a silicon tip by a single etching process, as well as a method of forming a tip floating gate to increase erase speed. Etching gases comprising (1) chlorine and/or (2) oxygen/helium are performed to form a silicon tip without bottom dimple. The invention may further control the tip angle by adjusting the etching parameters of gas compositions and ratios, chamber pressures, and radio frequency powers.
    Type: Application
    Filed: June 14, 2007
    Publication date: October 11, 2007
    Inventors: Chih-Ming CHEN, Rong-Yuan Hsieh, Ching-Chi Liu
  • Method of forming SI tip by single etching process and its application for forming floating gate
    Patent number: 7259051
    Abstract: The invention provides a method of forming a silicon tip by a single etching process, as well as a method of forming a tip floating gate to increase erase speed. Etching gases comprising (1) chlorine and/or (2) oxygen/helium are performed to form a silicon tip without bottom dimple. The invention may further control the tip angle by adjusting the etching parameters of gas compositions and ratios, chamber pressures, and radio frequency powers.
    Type: Grant
    Filed: February 7, 2005
    Date of Patent: August 21, 2007
    Assignee: Powerchip Semiconductor Corp.
    Inventors: Chih-Ming Chen, Rong-Yuan Hsieh, Ching-Chi Liu
  • Method of forming SI tip by single etching process and its application for forming floating gate
    Publication number: 20060178011
    Abstract: The invention provides a method of forming a silicon tip by a single etching process, as well as a method of forming a tip floating gate to increase erase speed. Etching gases comprising (1) chlorine and/or (2) oxygen/helium are performed to form a silicon tip without bottom dimple. The invention may further control the tip angle by adjusting the etching parameters of gas compositions and ratios, chamber pressures, and radio frequency powers.
    Type: Application
    Filed: February 7, 2005
    Publication date: August 10, 2006
    Inventors: Chih-Ming Chen, Rong-Yuan Hsieh, Ching-Chi Liu