Patents by Inventor Rongcheng LOU

Rongcheng LOU has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20220115532
    Abstract: A power semiconductor device includes a substrate; drain metal; a drift region; a base region; a gate structure; a first conductive type doped region contacting the base region on the side of the base region distant from the gate structure; a source region provided in the base region and between the first conductive type doped region and the gate structure; contact metal that is provided on the first conductive type doped region and forms a contact barrier having rectifying characteristics together with the first conductive type doped region below; and source metal wrapping the contact metal and contacting the source region.
    Type: Application
    Filed: December 23, 2019
    Publication date: April 14, 2022
    Inventors: Weifeng SUN, Rongcheng LOU, Kui XIAO, Feng LIN, Jiaxing WEI, Sheng LI, Siyang LIU, Shengli LU, Longxing SHI