Patents by Inventor Rongchun CHEN

Rongchun CHEN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • P-TYPE ZrCoSb-BASED HALF-HEUSLER SINGLE CRYSTAL ALLOY AND PREPARATION METHOD THEREOF
    Publication number: 20240401225
    Abstract: Provided are a P-type ZrCoSb-based half-Heusler single crystal alloy and a preparation method thereof. The method for preparing the P-type ZrCoSb-based half-Heusler single crystal alloy includes: subjecting alloy raw materials to smelting under a first protective atmosphere to obtain a half-Heusler polycrystalline alloy ingot, the alloy raw materials corresponding to a chemical composition of the P-type ZrCoSb-based half-Heusler single crystal alloy; and subjecting the half-Heusler polycrystalline alloy ingot to vertical Bridgman directional crystallization under a second protective atmosphere to obtain the P-type ZrCoSb-based half-Heusler single crystal alloy. The P-type ZrCoSb-based half-Heusler single crystal alloy has the chemical composition of ZrCoSb1-xSnx, x in the ZrCoSb1-xSnx being in a range of 0.1?x?0.3; and the P-type ZrCoSb-based half-Heusler single crystal alloy has an MgAgAs-type crystal structure.
    Type: Application
    Filed: October 16, 2023
    Publication date: December 5, 2024
    Applicants: Dalian University of Technology, NingBo Inst. of Dalian University of Technology
    Inventors: Huijun KANG, Rongchun CHEN, Tongmin WANG, Enyu GUO, Zongning CHEN, Tingju LI, Zhiqiang CAO, Yiping LU, Jinchuan JIE, Yubo ZHANG