Patents by Inventor Rongge SUN

Rongge SUN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10088720
    Abstract: A thin film transistor (TFT) array substrate, including: a gate line and a data line, which are formed on a substrate, and a sub-pixel unit defined by intersecting of the gate line and the data line, wherein, the sub-pixel unit comprises a thin film transistor device, a first pixel electrode layer and a second pixel electrode layer; the first pixel electrode layer is insulated from the second pixel electrode layer; the second pixel electrode layer is located over the first pixel electrode layer, and the pattern of strip-like pixel electrodes of the second pixel electrode layer overlap up-and-down with the pattern of the first pixel electrode layer; and the strip-like pixel electrodes make a tilt angle with an initial orientation of liquid crystals, and a gate line is parallel to the strip-like pixel electrodes close to the gate line.
    Type: Grant
    Filed: January 3, 2017
    Date of Patent: October 2, 2018
    Assignees: BOE TECHNOLOGY GROUP CO., LTD., HEFEI XINSHENG OPTOELECTRONICS TECHNOLOGY CO., LTD.
    Inventor: Rongge Sun
  • Publication number: 20170115537
    Abstract: According to an embodiment of the present invention, there is disclosed a thin film transistor (TFT) array substrate comprising a sub-pixel units the sub-pixel unit comprises a thin film transistor device, a common electrode, a first pixel electrode layer and a second pixel electrode layer; one of the first pixel electrode layer and the second pixel electrode layer is connected to the common electrode, the other one is connected to a source electrode or a drain electrode of the thin film transistor, and the first and second pixel electrode layers are separated by an insulating layer; the second pixel electrode layer is located over the first pixel electrode layer; and the strip-like pixel electrodes make a tilt angle with an initial orientation of liquid crystals, and a gate line or a data line is parallel to the strip-like pixel electrodes close to itself.
    Type: Application
    Filed: January 3, 2017
    Publication date: April 27, 2017
    Inventor: Rongge SUN
  • Patent number: 9557620
    Abstract: A thin film transistor (TFT) array substrate comprising a sub-pixel unit is disclosed. The sub-pixel unit includes a thin film transistor device, a first pixel electrode layer and a second pixel electrode layer; the first pixel electrode layer is configured as a common electrode, the second pixel electrode layer is connected to a source electrode or a drain electrode of the thin film transistor, and the first pixel electrode layer is insulated from the second pixel electrode layer; the second pixel electrode layer is located over the first pixel electrode layer, and strip-like pixel electrodes of the second pixel electrode layer overlap the first pixel electrode layer; and strip-like pixel electrodes of the second pixel electrode layer which are extended along a straight line make a tilt angle with an initial alignment of liquid crystals, and a data line is parallel to one of the strip-like pixel electrodes close to the data line.
    Type: Grant
    Filed: November 8, 2012
    Date of Patent: January 31, 2017
    Assignees: BOE TECHNOLOGY GROUP CO., LTD., HEFEI XINSHENG OPTOELECTRONICS TECHNOLOGY CO., LTD.
    Inventor: Rongge Sun
  • Publication number: 20160299389
    Abstract: The present disclosure provides an array substrate for a thin film transistor liquid crystal display (TFT-LCD), comprising: a base substrate having gate lines and data lines intersecting with each other to define sub-pixel units, each comprising a thin film transistor, a common electrode, a first pixel region and a second pixel region, wherein the first pixel region includes a first pixel electrode connected to the common electrode and a second pixel electrode connected to a drain electrode of the thin film transistor, and the first pixel electrode is on a same layer as and insulated from the second pixel electrode, and wherein the second pixel region includes a third pixel electrode connected to the common electrode and a fourth pixel electrode connected to the drain electrode, which are on a same layer and spaced apart from each other by a second local opening.
    Type: Application
    Filed: June 17, 2016
    Publication date: October 13, 2016
    Inventor: Rongge SUN
  • Patent number: 9429794
    Abstract: A pixel unit includes an active area pixel electrode and a passive area pixel electrode disposed in the same layer; a thin film transistor switch electrically connected to the active area pixel electrode; and a coupling electrode disposed in a different layer from the active area pixel electrode and electrically connected to the active area pixel electrode, wherein the coupling electrode and the passive area pixel electrode are arranged to be at least partly overlapped with each other to form a coupling capacitance. The present invention also discloses an array substrate comprising the pixel unit and a liquid crystal display comprising the array substrate.
    Type: Grant
    Filed: November 12, 2013
    Date of Patent: August 30, 2016
    Assignees: BOE TECHNOLOGY GROUP CO., LTD., HEFEI BOE OPTOELECTRONICS TECHNOLOGY CO., LTD.
    Inventors: Ying Shen, Zhizhong Tu, Rongge Sun
  • Patent number: 8884292
    Abstract: Embodiments of the disclosed technology provide a transflective transistor thin film array substrate and a method for manufacturing the same. The transflective thin film transistor array substrate, comprising pixel units defined by gate lines and data lines, and each pixel unit comprises a thin film transistor and a common electrode and is divided into a reflective region and a transmissive region. The reflective region comprises a reflective electrode and a second pixel electrode of the reflective region, the transmissive region comprises first and second pixel electrodes of the transmissive region, and the second pixel electrode of the reflective region and the first and second pixel electrodes of the transmissive region are provided in one pixel electrode layer.
    Type: Grant
    Filed: December 28, 2011
    Date of Patent: November 11, 2014
    Assignees: Boe Technology Group Co., Ltd., Hefei Xinsheng Optoelectronics Technology Co., Ltd.
    Inventors: Rongge Sun, Xiujian Zhu, Guangyan Tian
  • Publication number: 20140139773
    Abstract: A pixel unit, comprising: an active area pixel electrode and a passive area pixel electrode disposed in the same layer; a thin film transistor switch electrically connected to the active area pixel electrode; and a coupling electrode disposed in a different layer from the active area pixel electrode and electrically connected to the active area pixel electrode, wherein the coupling electrode and the passive area pixel electrode are arranged to be at least partly overlapped with each other to form a coupling capacitance. The present invention also discloses an array substrate comprising the pixel unit and a liquid crystal display comprising the array substrate.
    Type: Application
    Filed: November 12, 2013
    Publication date: May 22, 2014
    Applicants: HEFEI Boe Optoelectronics Technology Co., Ltd., Boe Technology Group Co., Ltd.
    Inventors: Ying SHEN, Zhizhong TU, Rongge SUN
  • Patent number: 8704231
    Abstract: An array substrate of a TFT-LCD, comprising: a base substrate; gate lines and data lines formed on the substrate, the gate lines and the data lines crossing with each other to define a plurality of pixel units each of which comprises a thin film transistor, a first electrode layer and a second electrode layer, wherein the first electrode layer is separated from the second electrode layer through an insulation layer; the first electrode layer comprises a plurality of first electrodes separated by openings; the second electrode layer comprises a plurality of second electrodes separated by openings; the second electrodes comprise overlapping electrodes each of which completely overlaps with the first electrodes and non-overlapping electrodes whose edges are completely located within an region corresponding to the openings in the first electrode layer.
    Type: Grant
    Filed: December 27, 2011
    Date of Patent: April 22, 2014
    Assignees: Boe Technology Group Co., Ltd., Hefei Xinsheng Optoelectronics Technology Co., Ltd.
    Inventors: Rongge Sun, Xin Ye
  • Publication number: 20130120680
    Abstract: According to an embodiment of the present invention, there is disclosed a thin film transistor (TFT) array substrate comprising a sub-pixel units the sub-pixel unit comprises a thin film transistor device, a common electrode, a first pixel electrode layer and a second pixel electrode layer; one of the first pixel electrode layer and the second pixel electrode layer is connected to the common electrode, the other one is connected to a source electrode or a drain electrode of the thin film transistor, and the first and second pixel electrode layers are separated by an insulating layer; the second pixel electrode layer is located over the first pixel electrode layer; and the strip-like pixel electrodes make a tilt angle with an initial orientation of liquid crystals, and a gate line or a data line is parallel to the strip-like pixel electrodes close to itself.
    Type: Application
    Filed: November 8, 2012
    Publication date: May 16, 2013
    Applicants: HEFEI XINSHENG OPTOELECTRONICS TECHNOLOGY CO., LTD., BOE TECHNOLOGY GROUP CO., LTD.
    Inventor: Rongge Sun
  • Publication number: 20120169577
    Abstract: The present disclosure provides an array substrate for a thin film transistor liquid crystal display (TFT-LCD), comprising: a base substrate having gate lines and data lines intersecting with each other to define sub-pixel units, each comprising a thin film transistor, a common electrode, a first pixel region and a second pixel region, wherein the first pixel region includes a first pixel electrode connected to the common electrode and a second pixel electrode connected to a drain electrode of the thin film transistor, and the first pixel electrode is on a same layer as and insulated from the second pixel electrode, and wherein the second pixel region includes a third pixel electrode connected to the common electrode and a fourth pixel electrode connected to the drain electrode, which are on a same layer and spaced apart from each other by a second local opening.
    Type: Application
    Filed: December 21, 2011
    Publication date: July 5, 2012
    Applicants: Hefei Xinsheng Optoelectronics Technology Co., Ltd., BOE TECHNOLOGY GROUP CO., LTD.
    Inventor: Rongge SUN
  • Publication number: 20120168760
    Abstract: Embodiments of the disclosed technology provide a transflective transistor thin film array substrate and a method for manufacturing the same. The transflective thin film transistor array substrate, comprising pixel units defined by gate lines and data lines, and each pixel unit comprises a thin film transistor and a common electrode and is divided into a reflective region and a transmissive region. The reflective region comprises a reflective electrode and a second pixel electrode of the reflective region, the transmissive region comprises first and second pixel electrodes of the transmissive region, and the second pixel electrode of the reflective region and the first and second pixel electrodes of the transmissive region are provided in one pixel electrode layer.
    Type: Application
    Filed: December 28, 2011
    Publication date: July 5, 2012
    Applicants: Hefei Xinsheng Optoelectronics Technology Co., Ltd., BOE TECHNOLOGY GROUP CO., LTD.
    Inventors: Rongge SUN, Xiujian ZHU, Guangyan TIAN
  • Publication number: 20120161142
    Abstract: An array substrate of a TFT-LCD, comprising: a base substrate; gate lines and data lines formed on the substrate, the gate lines and the data lines crossing with each other to define a plurality of pixel units each of which comprises a thin film transistor, a first electrode layer and a second electrode layer, wherein the first electrode layer is separated from the second electrode layer through an insulation layer; the first electrode layer comprises a plurality of first electrodes separated by openings; the second electrode layer comprises a plurality of second electrodes separated by openings; the second electrodes comprise overlapping electrodes each of which completely overlaps with the first electrodes and non-overlapping electrodes whose edges are completely located within an region corresponding to the openings in the first electrode layer.
    Type: Application
    Filed: December 27, 2011
    Publication date: June 28, 2012
    Applicants: HEFEI XINSHENG OPTOELECTRONICS TECHNOLOGY CO., LTD., BOE TECHNOLOGY GROUP CO., LTD.
    Inventors: Rongge SUN, Xin YE