Abstract: A plasma heating apparatus for heating a workpiece includes a chamber of sufficient size to receive a workpiece therein and a source of a reduced gas pressure within the chamber of from about 0.01 to about 100 millitorr. The plasma heating apparatus further includes a plasma source of an enveloping plasma. Optionally, a workpiece voltage may be applied between the workpiece and the wall of the chamber, and a source of a reactive gas can be provided to backfill the chamber, and radiant heaters can be provided to independently heat portions of the workpiece. In operation, the plasma source produces a plasma that surrounds and heats the workpiece. The plasma and the heating of the workpiece are tailored to achieve controllably uniform or nonuniform heat treatment and/or surface treatment of the workpiece.

Abstract: Diamondlike carbon is deposited on a deposition substrate in a deposition apparatus that can be evacuated and backfilled with a carbonaceous gas. A plasma is generated in the gas by heating a filament within the chamber to produce electrons, and positively biasing the filament with respect to the deposition chamber wall to accelerate the electrons into the carbonaceous gas. The carbonaceous gas dissociates and ionizes in the resulting plasma to produce positively charged carbon ions. A deposition substrate within the chamber is negatively biased with respect to the deposition chamber wall, accelerating the carbon ions so that they are deposited onto the surface of the substrate.