Abstract: A screening method for an amino acid sequence of a protein nanopore, a protein nanopore, and applications thereof. The screening method includes: evaluating a characteristic sequence of a dual-pore structure, using a model to search for an amino acid sequence matched with the characteristic feature of the dual-pore structure, removing a redundant candidate sequence and then performing positioning and screening, calculating the matching length and envelope length of the candidate sequence, then performing registration to obtain a relative mismatching relationship with a known protein nanopore, and performing analysis to obtain a final sequence.

Abstract: An optical device includes an LED chip, a light absorber and/or visible-light luminescent material, and a near-infrared luminescent material, wherein a luminous power of light emitted by the near-infrared luminescent material and the light absorber and/or visible-light luminescent material in a band of 650-1000 nm under the excitation of the LED chip is A, and a sum of a luminous power of light emitted by the near-infrared and visible-light luminescent materials in a band of 350-650 nm under the excitation of the LED chip and a luminous power of residual light emitted by the LED chip in the band of 350-650 nm after the LED chip excites the near-infrared and visible-light luminescent materials is B, with B/A*100% being 0.1%-10%. According to the implementation where the optical device employs the LED chip to combine the near-infrared luminescent material and the light absorber and/or visible-light luminescent material simultaneously.

Abstract: The invention relates to a phosphor with garnet structure and a light-emitting device comprising the phosphor, wherein the phosphor includes the following components in percentage by weight: 38.47-45.19% of Y element, 9.49-22.09% of Al element, 2.06-24.31% of Ga element, 27.3-32.04% of O element, 0.43-1.46% of Ce element. In the phosphor particles, the shortest distance from the surface of one side of the particle to the surface of the opposite side through the centroid of the particle is defined as R, the longest distance is R1, and 5 ?m?R?40 ?m; any distance from the particle surface to the centroid is r, and 0<r<½R; and the space with the distance from the particle surface to the centroid direction being less than or equal to r is defined as rinner.

Abstract: Disclosed are a red light and near-infrared light-emitting material and a preparation method thereof, and a light-emitting device including the light-emitting material. The red light and near-infrared light-emitting material contains a compound represented by a molecular formula, aSc2O3·Ga2O3·bR2O3, wherein the element R includes one or two of Cr, Ni, Fe, Yb, Nd or Er; 0.001?a?0.6; and 0.001?b?0.1. The light-emitting material can be excited by a spectrum having a wide wavelength range (ultraviolet light or purple light or blue light) to emit light with a wide spectrum of 650 nm to 1700 nm or multiple spectra, thus having higher light-emitting intensity.

Abstract: An optical device includes an LED chip, a visible-light luminescent material, and a near-infrared luminescent material, wherein a luminous power of light emitted by the near-infrared and visible-light luminescent materials in a band of 650-1000 nm under the excitation of the LED chip is A, and a sum of a luminous power of light emitted by the near-infrared and visible-light luminescent materials in a band of 350-650 nm under the excitation of the LED chip and a luminous power of residual light emitted by the LED chip in the band of 350-650 nm after the LED chip excites the near-infrared and visible-light luminescent materials is B, with B/A*100% being 0.1%-10%. According to the implementation where the optical device employs the LED chip to combine the near-infrared luminescent material and the visible-light luminescent material simultaneously.

Abstract: The present invention discloses a red light and near-infrared light-emitting material and a light-emitting device. The red light and near-infrared light-emitting material contains a compound represented by a molecular formula, xA2O3·yIn2O3·bR2O3, wherein the element A is Sc and/or Ga; the element R is one or two of Cr, Yb, Nd or Er and necessarily includes Cr; and 0.001?x?1, 0.001?y?1, 0.001?b?0.2, and 0.001?b/(x+y)?0.2. The light-emitting material can be excited by a technically mature blue light source to emit light with a high-intensity wide-spectrum or multiple spectra. Compared with existing materials, the light-emitting material has higher luminescent intensity. The light-emitting device uses an LED chip to combine an infrared light-emitting material and a visible light light-emitting material. In this way, the same LED chip can emit near-infrared light and visible light at the same time, which greatly simplifies the packaging process and reduces the packaging cost.

Abstract: The present invention relates to a red phosphor, a preparation method thereof and a light-emitting device prepared therefrom. A particle of the red phosphor consists of a phosphor inner core having a chemical formula of Ax1Gez1F6:y1Mn4+ and an outer shell having a chemical formula of Bx2Mz2F6:y2Mn4+, wherein 1.596?x1?2.2, 1.6?x2?2.2, 0.001?y1?0.2, 0?y2?0.2, 0.9?z1?1.1, and 0.9?z2?1.1; A and B are independently selected from alkali metal elements; and M is Si, or Si and Ge. The red phosphor provided by the present invention has high luminous efficiency and stability. Moreover, the phosphor alone or in combination with other luminescent materials can be used for preparing a light-emitting device with high performance.

Abstract: The invention relates to a phosphor with garnet structure and a light-emitting device comprising the phosphor, wherein the phosphor includes the following components in percentage by weight: 38.47-45.19% of Y element, 9.49-22.09% of Al element, 2.06-24.31% of Ga element, 27.3-32.04% of O element, 0.43-1.46% of Ce element. In the phosphor particles, the shortest distance from the surface of one side of the particle to the surface of the opposite side through the centroid of the particle is defined as R, the longest distance is R1, and 5 ?m?R?40 ?m; any distance from the particle surface to the centroid is r, and 0<r<½R; and the space with the distance from the particle surface to the centroid direction being less than or equal to r is defined as rinner.

Abstract: The present invention belongs to the technical field of inorganic luminescent materials, particularly relates to a nitride fluorescent material, and further discloses a light-emitting device containing such a fluorescent material. The nitride fluorescent material contains a compound with a structure like MmAlxSiyN3: aR, bEu, cCe. The fluorescent material has very high physical stability and chemical stability, and the fluorescent material is better in crystallization, and thus has relatively high external quantum efficiency. When being applied to a light-emitting device, the fluorescent material can fully exert the advantages of good stability and high external quantum efficiency, and the light-emitting efficiency and stability of the light-emitting device can be further improved.

Abstract: The present disclosure relates to the technical field of luminescent materials, and more particularly, to a nitride luminescent material and a light emitting device comprising the luminescent material. The nitride luminescent material recited in the present disclosure includes an inorganic compound with the structural composition RwQxSiyNz, the excitation wavelength of the luminescent material is between 300-650 nm, and the emission main peak of the NIR light region is broadband emission between 900-1100 nm; the excitation wavelength of the luminescent material is relatively broad and capable of excellent absorption of ultraviolet visible light, and has more intensive NIR emission as compared with NIR organic luminescent materials and inorganic luminescent materials of other systems, so it is an ideal application material for NIR devices.

Abstract: An optical device includes an LED chip, a visible-light luminescent material, and a near-infrared luminescent material, wherein a luminous power of light emitted by the near-infrared and visible-light luminescent materials in a band of 650-1000 nm under the excitation of the LED chip is A, and a sum of a luminous power of light emitted by the near-infrared and visible-light luminescent materials in a band of 350-650 nm under the excitation of the LED chip and a luminous power of residual light emitted by the LED chip in the band of 350-650 nm after the LED chip excites the near-infrared and visible-light luminescent materials is B, with B/A*100% being 0.1%-10%. According to the implementation where the optical device employs the LED chip to combine the near-infrared luminescent material and the visible-light luminescent material simultaneously.

Abstract: An optical device includes an LED chip, a light absorber and/or visible-light luminescent material, and a near-infrared luminescent material, wherein a luminous power of light emitted by the near-infrared luminescent material and the light absorber and/or visible-light luminescent material in a band of 650-1000 nm under the excitation of the LED chip is A, and a sum of a luminous power of light emitted by the near-infrared and visible-light luminescent materials in a band of 350-650 nm under the excitation of the LED chip and a luminous power of residual light emitted by the LED chip in the band of 350-650 nm after the LED chip excites the near-infrared and visible-light luminescent materials is B, with B/A*100% being 0.1%-10%. According to the implementation where the optical device employs the LED chip to combine the near-infrared luminescent material and the light absorber and/or visible-light luminescent material simultaneously.

Abstract: The present invention discloses a red light and near-infrared light-emitting material and a light-emitting device. The red light and near-infrared light-emitting material contains a compound represented by a molecular formula, xA2O3.yIn2O3.bR2O3, wherein the element A is Sc and/or Ga; the element R is one or two of Cr, Yb, Nd or Er and necessarily includes Cr; and 0.001?x?1, 0.001?y?1, 0.001?b?0.2, and 0.001?b/(x+y)?0.2. The light-emitting material can be excited by a technically mature blue light source to emit light with a high-intensity wide-spectrum or multiple spectra. Compared with existing materials, the light-emitting material has higher luminescent intensity. The light-emitting device uses an LED chip to combine an infrared light-emitting material and a visible light light-emitting material. In this way, the same LED chip can emit near-infrared light and visible light at the same time, which greatly simplifies the packaging process and reduces the packaging cost.

Abstract: The near-infrared luminescent material is capable of efficiently emitting near-infrared light with a peak wavelength of 900 nm to 1,100 nm under an effective excitation wavelength of 250 nm to 750 nm. The luminescent material has the characteristics of wide excitation emission wavelength, high luminous efficiency, uniform luminescence, no impurity phase, high stability, simple preparation and the like. The present invention further provides the light-emitting device prepared from the near-infrared luminescent material. The luminescent material and the light-emitting device provided by the present invention solve the problems of poor stability, low luminous efficiency, high preparation cost and the like of a conventional near-infrared luminescent material and light-emitting device, and have a favorable application prospect.

Abstract: The present disclosure relates to the technical field of luminescent materials, and more particularly, to a nitride luminescent material and a light emitting device comprising the luminescent material. The nitride luminescent material recited in the present disclosure includes an inorganic compound with the structural composition RwQxSiyNz, the excitation wavelength of the luminescent material is between 300-650 nm, and the emission main peak of the NIR light region is broadband emission between 900-1100 nm; the excitation wavelength of the luminescent material is relatively broad and capable of excellent absorption of ultraviolet visible light, and has more intensive NIR emission as compared with NIR organic luminescent materials and inorganic luminescent materials of other systems, so it is an ideal application material for NIR devices.

Abstract: Disclosed are a red light and near-infrared light-emitting material and a preparation method thereof, and a light-emitting device including the light-emitting material. The red light and near-infrared light-emitting material contains a compound represented by a molecular formula, aSc2O3.Ga2O3.bR2O3, wherein the element R includes one or two of Cr, Ni, Fe, Yb, Nd or Er; 0.001?a?0.6; and 0.001?b?0.1. The light-emitting material can be excited by a spectrum having a wide wavelength range (ultraviolet light or purple light or blue light) to emit light with a wide spectrum of 650 nm to 1700 nm or multiple spectra, thus having higher light-emitting intensity.

Abstract: Phosphor, a preparation method for the phosphor, and a light emitting device having the phosphor. The phosphor comprises an inorganic compound which at least comprises an element M, an element A, an element D, and an element R; the element M is one or two elements selected from the group consisting of Lu, La, Pr, Nd, Sm, Y, Tb, and Gd and must comprise Lu; the element A is Si and/or Ge; the element D is one or two elements selected from the group consisting of O, N, and F and must comprise N; the element R is Ce and/or Dy. Since the ionic radius of Lu3+ is smaller than that of La3+, when the inorganic compound comprises element Lu, the original ligand site would be contracted. In order to reduce lattice distortion due to the ligand site contraction, the adjacent ligand site expands, and the photochromic property is adjusted.

Abstract: A lutetium nitride-based phosphor and a light emitting device comprising the same, wherein the lutetium nitride-based phosphor comprises an inorganic compound, and the composition of the inorganic compound comprises at least an M element, an A element, a D element and an R element; the M element is one or two elements selected from a group consisting of Lu, La, Pr, Nd, Sm, Y, Tb and Gd, and necessarily comprises Lu; the A element is Si and/or Ge; the D element is one or two elements selected from a group consisting of O, N and F, and necessarily comprises N; the R element is Ce and/or Dy, and the atomic molar ratio of the Lu element in the M element is greater than 50%. Because the ion radius of Lu3+ is smaller than the ion radius of La3+, the light color performance thereof can be flexibly adjusted according to needs.

Abstract: The present invention relates to a red phosphor, a preparation method thereof and a light-emitting device prepared therefrom. A particle of the red phosphor consists of a phosphor inner core having a chemical formula of Ax1Gez1F6:y1Mn4+ and an outer shell having a chemical formula of Bx2Mz2F6:y2Mn4+, wherein 1.596?x1?2.2, 1.6?x2?2.2, 0.001?y1?0.2, 0?y2?0.2, 0.9?z1?1.1, and 0.9?z2?1.1; A and B are independently selected from alkali metal elements; and M is Si, or Si and Ge. The red phosphor provided by the present invention has high luminous efficiency and stability. Moreover, the phosphor alone or in combination with other luminescent materials can be used for preparing a light-emitting device with high performance.

Abstract: The present invention belongs to the technical field of inorganic luminescent materials, particularly relates to a nitride fluorescent material, and further discloses a light-emitting device containing such a fluorescent material. The nitride fluorescent material contains a compound with a structure like MmAlxSiyN3: aR, bEu, cCe. The fluorescent material has very high physical stability and chemical stability, and the fluorescent material is better in crystallization, and thus has relatively high external quantum efficiency. When being applied to a light-emitting device, the fluorescent material can fully exert the advantages of good stability and high external quantum efficiency, and the light-emitting efficiency and stability of the light-emitting device can be further improved.