Abstract: A method of filling a feature in a semiconductor structure with metal includes depositing a metal cap layer on a bottom surface of a feature formed within a dielectric layer and top surfaces of the dielectric layer, partially filling the feature from the bottom surface with a flowable polymer layer, performing a metal pullback process to remove the metal cap layer on the top surfaces of the dielectric layer selectively to the dielectric layer, wherein the metal pullback process includes a first etch process including a chemical etch process using molybdenum hexafluoride (MoF6) to remove the metal cap layer selectively to the dielectric layer, and a second etch process to remove residues on etched surfaces of the dielectric layer, removing the flowable polymer layer, pre-cleaning a surface of the metal cap layer, and filling the feature from the surface of the metal cap layer with metal fill material.

Abstract: Embodiments of the present disclosure generally relate to a method for forming an electrically conductive feature on a substrate. In one embodiment, the method includes forming a first conductive layer via physical vapor deposition (PVD) in an opening of a substrate. The first conductive layer has a thickness of less than 20 angstroms. The method further includes forming a second conductive layer via PVD on the first conductive layer. The first conductive layer and the second conductive layer are formed at a temperature of less than 50° C. The method further includes annealing at least a portion of the first conductive layer and the second conductive layer.

Abstract: A method of filling a via having a necking point includes performing a pre-clean process to remove residues from an exposed surface of a metal layer at a bottom of a via and recover inner surfaces of the via, wherein the via is formed within a dielectric layer and has a necking point protruding within the via, performing a selective deposition process to partially fill the via with metal fill material from the exposed surface of the metal layer below the necking point, performing a liner deposition process to form a liner layer on exposed inner surfaces of the via, and performing a metal fill process to fill the via with the metal fill material.

Abstract: A method and system for fast transporting real-time media stream data package is based on the Real-time Transport Protocol/Real-time Transport Control Protocol of User Datagram Protocol for network nodes such as media gateway, Integrated Access Device (IAD) and multimedia terminal. The improvement of the system lies in the adding of an IP data package fast filter module, a UDP fast sending module and a policy ARP table process module based on local UDP port. The method involves: fast receiving the real-time media stream data package transmitted on the basis of RTP/RTCP protocol; fast sending the real-time media stream data package transmitted on the basis of RTP/RTCP protocol; and a policy ARP table based on UDP port and its refurbishing system.