Patents by Inventor Rongming WANG

Rongming WANG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Visible light detector with high-photoresponse based on TiO/MoSheterojunction and preparation thereof
    Patent number: 11961934
    Abstract: In the field of photoelectric devices, a visible light detector is provided with high-photoresponse based on a TiO2/MoS2 heterojunction and a preparation method thereof. The detector, based on a back-gated field-effect transistor based on MoS2, includes a MoS2 channel, a TiO2 modification layer, a SiO2 dielectric layer, Au source/drain electrodes and a Si gate electrode, The TiO2 modification layer is modified on the surface of the MoS2 channel. By employing micromechanical exfoliation and site-specific transfer of electrodes, the method is intended to prepare a detector by constructing a back-gated few-layer field-effect transistor based on MoS2, depositing Ti on the channel surface, and natural oxidation.
    Type: Grant
    Filed: June 9, 2021
    Date of Patent: April 16, 2024
    Assignee: UNIVERSITY OF SCIENCE AND TECHNOLOGY BEIJING
    Inventors: Yinghui Sun, Bingxu Liu, Rongming Wang
  • VISIBLE LIGHT DETECTOR WITH HIGH-PHOTORESPONSE BASED ON TiO2/MoS2 HETEROJUNCTION AND PREPARATION THEREOF
    Publication number: 20220005967
    Abstract: In the field of photoelectric devices, a visible light detector is provided with high-photoresponse based on a TiO2/MoS2 heterojunction and a preparation method thereof. The detector, based on a back-gated field-effect transistor based on MoS2, includes a MoS2 channel, a TiO2 modification layer, a SiO2 dielectric layer, Au source/drain electrodes and a Si gate electrode, The TiO2 modification layer is modified on the surface of the MoS2 channel. By employing micromechanical exfoliation and site-specific transfer of electrodes, the method is intended to prepare a detector by constructing a back-gated few-layer field-effect transistor based on MoS2, depositing Ti on the channel surface, and natural oxidation.
    Type: Application
    Filed: June 9, 2021
    Publication date: January 6, 2022
    Applicant: UNIVERSITY OF SCIENCE AND TECHNOLOGY BEIJING
    Inventors: Yinghui SUN, Bingxu LIU, Rongming WANG