Patents by Inventor Rongsheng Pu

Rongsheng Pu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Manufacturing method of a light-emitting device having a patterned substrate
    Patent number: 9356213
    Abstract: A manufacturing method of a light-emitting diode device. The light-emitting diode device comprises: a substrate (1); an epitaxial layer at one side of the substrate (1) and comprising an N-type layer (2), a P-type layer (4), and an active layer (3) between the N-type layer (2) and the P-type layer (4); an N-type electrode (5); a P-type electrode (7); an adhesive layer (8); and a patterned substrate (9). The light-emitting diode device further comprises an insulating layer (6) between the N-type electrode (5) and the P-type electrode (7), the insulating layer (6) electrically insulating the N-type electrode (5) and the P-type electrode (7). In the manufacturing method thereof, light-emitting efficiency and luminous efficiency of the light-emitting diode device can be improved, wiring is easier as compared with conventional chips, and the manufacturing process can be optimized.
    Type: Grant
    Filed: September 23, 2015
    Date of Patent: May 31, 2016
    Assignee: WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD.
    Inventors: Lei Wang, Guoqi Li, Zhiyan Yu, Rongsheng Pu
  • MANUFACTURING METHOD OF A LIGHT-EMITTING DEVICE HAVING A PATTERNED SUBSTRATE
    Publication number: 20160013386
    Abstract: A manufacturing method of a light-emitting diode device. The light-emitting diode device comprises: a substrate (1); an epitaxial layer at one side of the substrate (1) and comprising an N-type layer (2), a P-type layer (4), and an active layer (3) between the N-type layer (2) and the P-type layer (4); an N-type electrode (5); a P-type electrode (7); an adhesive layer (8); and a patterned substrate (9). The light-emitting diode device further comprises an insulating layer (6) between the N-type electrode (5) and the P-type electrode (7), the insulating layer (6) electrically insulating the N-type electrode (5) and the P-type electrode (7). In the manufacturing method thereof, light-emitting efficiency and luminous efficiency of the light-emitting diode device can be improved, wiring is easier as compared with conventional chips, and the manufacturing process can be optimized.
    Type: Application
    Filed: September 23, 2015
    Publication date: January 14, 2016
    Inventors: Lei Wang, Guoqi Li, Zhiyan Yu, Rongsheng Pu
  • Light-emitting device having a patterned substrate
    Patent number: 9172002
    Abstract: A light-emitting diode device and a manufacturing method thereof. The light-emitting diode device includes: a substrate (1); an epitaxial layer at one side of the substrate (1) and including an N-type layer (2), a P-type layer (4), and an active layer (3) between the N-type layer (2) and the P-type layer (4); an N-type electrode (5); a P-type electrode (7); an adhesive layer (8); and a patterned substrate (9). The light-emitting diode device further includes an insulating layer (6) between the N-type electrode (5) and the P-type electrode (7), the insulating layer (6) electrically insulating the N-type electrode (5) and the P-type electrode (7). In the light-emitting diode device and the manufacturing method thereof, light-emitting efficiency and luminous efficiency of the light-emitting diode device can be improved, wiring is easier as compared with conventional chips, and the manufacturing process can be optimized.
    Type: Grant
    Filed: December 3, 2012
    Date of Patent: October 27, 2015
    Assignee: Wuxi China Resources Huajing Microelectronic Co., Ltd.
    Inventors: Lei Wang, Guoqi Li, Zhiyan Yu, Rongsheng Pu
  • LIGHT-EMITTING DIODE DEVICE AND MANUFACTURING METHOD THEREOF
    Publication number: 20140367697
    Abstract: A light-emitting diode device and a manufacturing method thereof. The light-emitting diode device comprises: a substrate (1); an epitaxial layer at one side of the substrate (1) and comprising an N-type layer (2), a P-type layer (4), and an active layer (3) between the N-type layer (2) and the P-type layer (4); an N-type electrode (5); a P-type electrode (7); an adhesive layer (8); and a patterned substrate (9). The light-emitting diode device further comprises an insulating layer (6) between the N-type electrode (5) and the P-type electrode (7), the insulating layer (6) electrically insulating the N-type electrode (5) and the P-type electrode (7). In the light-emitting diode device and the manufacturing method thereof, light-emitting efficiency and luminous efficiency of the light-emitting diode device can be improved, wiring is easier as compared with conventional chips, and the manufacturing process can be optimized.
    Type: Application
    Filed: December 3, 2012
    Publication date: December 18, 2014
    Inventors: Lei Wang, Guoqi Li, Zhiyan Yu, Rongsheng Pu