Patents by Inventor Rongxiang Wu

Rongxiang Wu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9761545
    Abstract: An isolator is configured by a transmission circuit, a transformer, and a reception circuit. A first coil of the transformer is disposed on a back surface of a first semiconductor substrate; a transmission circuit and a second coil of the transformer are disposed on a front surface. The first coil is embedded within a coil trench, is led out through an embedded via-metal-film to a substrate front surface, and is electrically connected to the transmission circuit. The second coil is disposed on an insulating layer of the substrate front surface. The reception circuit is disposed on a front surface of a second semiconductor substrate. The second coil and the reception circuit are electrically connected to each other by connecting first and third electrode pads disposed respectively on the front surfaces of the first and second semiconductor substrates through wires.
    Type: Grant
    Filed: July 1, 2016
    Date of Patent: September 12, 2017
    Assignee: FUJI ELECTRIC CO., LTD.
    Inventors: Johnny Kin On Sin, Lulu Peng, Rongxiang Wu, Hitoshi Sumida, Yoshiaki Toyoda, Masashi Akahane
  • Patent number: 9559158
    Abstract: An integrated capacitor can be fabricated with both electrodes formed by trenches for low resistance. According to one embodiment, the capacitor can comprise a first trench electrode, one or more dielectric layers, and a second trench electrode. The first trench electrode and the second trench electrode can be fabricated in different trenches to improve capacitance density and resistance of the integrated capacitor.
    Type: Grant
    Filed: January 8, 2016
    Date of Patent: January 31, 2017
    Assignee: THE HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY
    Inventors: Kin On Johnny Sin, Rongxiang Wu, Xiangming Fang
  • Publication number: 20170005046
    Abstract: An isolator is configured by a transmission circuit, a transformer, and a reception circuit. A first coil of the transformer is disposed on a back surface of a first semiconductor substrate; a transmission circuit and a second coil of the transformer are disposed on a front surface. The first coil is embedded within a coil trench, is led out through an embedded via-metal-film to a substrate front surface, and is electrically connected to the transmission circuit. The second coil is disposed on an insulating layer of the substrate front surface. The reception circuit is disposed on a front surface of a second semiconductor substrate. The second coil and the reception circuit are electrically connected to each other by connecting first and third electrode pads disposed respectively on the front surfaces of the first and second semiconductor substrates through wires.
    Type: Application
    Filed: July 1, 2016
    Publication date: January 5, 2017
    Applicant: FUJI ELECTRIC CO., LTD.
    Inventors: Johnny Kin On SIN, Lulu PENG, Rongxiang WU, Hitoshi SUMIDA, Yoshiaki TOYODA, Masashi AKAHANE
  • Publication number: 20160204189
    Abstract: An integrated capacitor can be fabricated with both electrodes formed by trenches for low resistance. According to one embodiment, the capacitor can comprise a first trench electrode, one or more dielectric layers, and a second trench electrode. The first trench electrode and the second trench electrode can be fabricated in different trenches to improve capacitance density and resistance of the integrated capacitor.
    Type: Application
    Filed: January 8, 2016
    Publication date: July 14, 2016
    Inventors: Kin On Johnny Sin, Rongxiang Wu, Xiangming Fang
  • Patent number: 9318784
    Abstract: In certain aspects of the invention, an isolator is configured by a reception circuit, a transmission circuit, and a transformer. In some aspects, the transmission circuit is disposed in an anterior surface of a semiconductor substrate. The transformer is disposed in a posterior surface of the semiconductor substrate and transmits in an electrically isolated state to the reception circuit, a signal input from the transmission circuit. The transformer is configured by a primary coil and a secondary coil. The primary coil can be configured by a metal film embedded in an oxide film inside a coil trench. The secondary coil can be disposed inside an insulating film covering the primary coil so as to oppose the primary coil and is insulated from the primary coil by the insulating film.
    Type: Grant
    Filed: May 15, 2013
    Date of Patent: April 19, 2016
    Assignee: FUJI ELECTRIC CO., LTD.
    Inventors: Johnny Kin-On Sin, Lulu Peng, Rongxiang Wu, Hitoshi Sumida, Yoshiaki Toyoda, Masashi Akahane
  • Patent number: 9287344
    Abstract: Providing for a monolithic magnetic induction device having low DC resistance and small surface area is described herein. By way of example, the magnetic induction device can comprise a substrate (e.g., a semiconductor substrate) having trenches formed in a bottom layer of the substrate, and holes formed in the substrate between the trenches and an upper layer of the substrate. Additionally, the magnetic induction device can comprise a conductive coil embedded or deposited within the trenches. The magnetic induction device can further comprise a set of conductive vias formed in the holes that electrically connect the bottom layer of the substrate with the upper layer. Further, one or more integrated circuit components, such as active devices, can be formed in the upper layer, at least in part above the conductive coil. The vias can be utilized to connect to integrated circuit components with the conductive coil, where suitable.
    Type: Grant
    Filed: August 23, 2011
    Date of Patent: March 15, 2016
    Assignee: THE HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY
    Inventors: Johnny Kin On Sin, Rongxiang Wu, Ron Shu Yuen Hui
  • Patent number: 8754737
    Abstract: Methods and apparatus described herein are associated with integrated magnetic induction devices. A magnetic induction device can include a groove formed in a substrate, a magnetic core included in the groove and surrounded by a conductive winding that is adjacent to portion(s) of the substrate, and respective insulation layers included between the substrate and the conductive winding and between the magnetic core and the conductive winding. An inductor can further include conductive vias formed in the substrate and connected to respective portions of the conductive winding. Further, a transformer can include a groove formed in a substrate, a closed-loop/gapped magnetic core included in the groove and surrounded by first and second conductive windings that are adjacent to respective portions of the substrate, and respective insulation layers formed between the substrate and the first and second conductive windings, and between the closed-loop/gapped magnetic core and the first and second conductive windings.
    Type: Grant
    Filed: March 29, 2012
    Date of Patent: June 17, 2014
    Assignee: The Hong Kong University of Science and Technology
    Inventors: Johnny Kin On Sin, Rongxiang Wu, Xiangming Fang
  • Publication number: 20120249282
    Abstract: Methods and apparatus described herein are associated with integrated magnetic induction devices. A magnetic induction device can include a groove formed in a substrate, a magnetic core included in the groove and surrounded by a conductive winding that is adjacent to portion(s) of the substrate, and respective insulation layers included between the substrate and the conductive winding and between the magnetic core and the conductive winding. An inductor can further include conductive vias formed in the substrate and connected to respective portions of the conductive winding. Further, a transformer can include a groove formed in a substrate, a closed-loop/gapped magnetic core included in the groove and surrounded by first and second conductive windings that are adjacent to respective portions of the substrate, and respective insulation layers formed between the substrate and the first and second conductive windings, and between the closed-loop/gapped magnetic core and the first and second conductive windings.
    Type: Application
    Filed: March 29, 2012
    Publication date: October 4, 2012
    Applicant: THE HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY
    Inventors: Johnny Kin On Sin, Rongxiang Wu, Xiangming Fang
  • Publication number: 20120068301
    Abstract: Providing for a monolithic magnetic induction device having low DC resistance and small surface area is described herein. By way of example, the magnetic induction device can comprise a substrate (e.g., a semiconductor substrate) having trenches formed in a bottom layer of the substrate, and holes formed in the substrate between the trenches and an upper layer of the substrate. Additionally, the magnetic induction device can comprise a conductive coil embedded or deposited within the trenches. The magnetic induction device can further comprise a set of conductive vias formed in the holes that electrically connect the bottom layer of the substrate with the upper layer. Further, one or more integrated circuit components, such as active devices, can be formed in the upper layer, at least in part above the conductive coil. The vias can be utilized to connect to integrated circuit components with the conductive coil, where suitable.
    Type: Application
    Filed: August 23, 2011
    Publication date: March 22, 2012
    Applicant: THE HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY
    Inventors: Johnny Kin On Sin, Rongxiang Wu, Ron Shu Yuen Hui