Patents by Inventor Ronming CHU

Ronming CHU has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • TA BASED AU-FREE OHMIC CONTACTS IN ADVANCED AIGAN/GAN BASED HFETS AND/OR MOSHFETS FOR POWER SWITCH APPLICATIONS
    Publication number: 20150364330
    Abstract: A method of forming an Ohmic contact including forming a Ta layer in a contact area of a barrier layer by evaporation at an evaporation rate of 1 ?/second, forming a Ti layer on the first Ta layer, and forming an Al layer on the Ti layer, wherein the barrier layer comprises AlGaN having a 25% Al composition and a thickness in a range between 30 ? to 100 ?, and wherein the barrier layer is on a channel layer comprising GaN.
    Type: Application
    Filed: June 11, 2014
    Publication date: December 17, 2015
    Inventors: Mary Y. CHEN, Ronming CHU