Abstract: Integrated circuits and methods for producing the same are provided. A method of producing the integrated circuits includes forming an insulating layer overlying a substrate. The insulating layer includes a first composition that includes silicon oxide and a porogen. The porogen is removed from the first composition to form a second composition that includes a pore, where the second composition has a dielectric constant lower than that of the first composition. An insulating layer mechanical property desired range is determined, where the second composition has an insulating material mechanical property outside of the insulating layer mechanical property desired range. The second composition is altered to form a third composition, where the third composition has the insulating layer mechanical property within the insulating layer mechanical property desired range.

Abstract: Integrated circuits and methods for producing the same are provided. A method of producing the integrated circuits includes forming an insulating layer overlying a substrate. The insulating layer includes a first composition that includes silicon oxide and a porogen. The porogen is removed from the first composition to form a second composition that includes a pore, where the second composition has a dielectric constant lower than that of the first composition. An insulating layer mechanical property desired range is determined, where the second composition has an insulating material mechanical property outside of the insulating layer mechanical property desired range. The second composition is altered to form a third composition, where the third composition has the insulating layer mechanical property within the insulating layer mechanical property desired range.

Abstract: Upon forming a complex metallization system, the parasitic capacitance between metal lines of adjacent metallization layers may be reduced by providing a patterned etch stop material. In this manner, the patterning process for forming the via openings may be controlled in a highly reliable manner, while, on the other hand, the resulting overall dielectric constant of the metallization system may be reduced, thereby also significantly reducing the parasitic capacitance between stacked metal lines.

Abstract: Embodiments of a method for fabricating integrated circuits are provided, as are embodiments of an integrated circuit. In one embodiment, the method includes the steps of depositing an interlayer dielectric (“ILD”) layer over a semiconductor device, depositing a barrier polish stop layer over the ILD layer, and patterning at least the barrier polish stop layer and the ILD layer to create a plurality of etch features therein. Copper is plated over the barrier polish stop layer and into the plurality of etch features to produce a copper overburden overlying the barrier polish stop layer and a plurality of conductive interconnect features in the ILD layer and barrier polish stop layer. The integrated circuit is polished to remove the copper overburden and expose the barrier polish stop layer.

Abstract: Embodiments of a method for fabricating integrated circuits are provided, as are embodiments of an integrated circuit. In one embodiment, the method includes the steps of depositing an interlayer dielectric (“ILD”) layer over a semiconductor device, depositing a barrier polish stop layer over the ILD layer, and patterning at least the barrier polish stop layer and the ILD layer to create a plurality of etch features therein. Copper is plated over the barrier polish stop layer and into the plurality of etch features to produce a copper overburden overlying the barrier polish stop layer and a plurality of conductive interconnect features in the ILD layer and barrier polish stop layer. The integrated circuit is polished to remove the copper overburden and expose the barrier polish stop layer.

Abstract: The method described herein involves a method of forming metal gates and metal contacts in a common fill process. The method may involve forming a gate structure comprising a sacrificial gate electrode material, forming at least one conductive contact opening in a layer of insulating material positioned adjacent the gate structure, removing the sacrificial gate electrode material to thereby define a gate electrode opening, and performing a common deposition process to fill the conductive contact opening and the gate electrode opening with a conductive fill material.

Abstract: Upon forming a complex metallization system, the parasitic capacitance between metal lines of adjacent metallization layers may be reduced by providing a patterned etch stop material. In this manner, the patterning process for forming the via openings may be controlled in a highly reliable manner, while, on the other hand, the resulting overall dielectric constant of the metallization system may be reduced, thereby also significantly reducing the parasitic capacitance between stacked metal lines.