Abstract: A semiconductor module includes a first substrate, a second substrate having a closed, in particular continuous, hollow chamber structure, and a semiconductor element having a first side connected to the first substrate in a planar manner and a second side which faces away from the first side and is connected to the second substrate in a planar manner. A phase change material is arranged in the hollow chamber structure of the second substrate and in thermally conductive connection with the semiconductor element.

Abstract: An arrangement for a semiconductor arrangement includes a substrate including a dielectric material layer and a first metallization arranged on the dielectric material layer. A passive component is arranged completely in a cutout of the first metallization and bears directly on the dielectric material layer. The passive component is designed to include a first profile. The the first metallization includes a second profile in a region of contacting with the passive component, with the first and second profiles engaging with one another.

Abstract: An arrangement for a semiconductor arrangement includes a substrate including a dielectric material layer and a first metallization arranged on the dielectric material layer. A passive component is arranged completely in a cutout of the first metallization and bears directly on the dielectric material layer. The passive component is designed to include a first profile. The the first metallization includes a second profile in a region of contacting with the passive component, with the first and second profiles engaging with one another.

Abstract: A semiconductor module includes a first substrate, a second substrate having a closed, in particular continuous, hollow chamber structure, and a semiconductor element having a first side connected to the first substrate in a planar manner and a second side which faces away from the first side and is connected to the second substrate in a planar manner. A phase change material is arranged in the hollow chamber structure of the second substrate and in thermally conductive connection with the semiconductor element.

Abstract: A semiconductor module includes a substrate composed of electrically insulating material. A structured metal layer for contact with an electrical component is applied to a top side of the substrate. The structured metal layer is applied to the substrate only in a central region of the substrate, so that an edge region which surrounds the central region and in which the structured metal layer is not applied to the substrate remains on the top side of the substrate. A contact layer for making contact with a cooling body is situated opposite the structured metal layer and applied to a bottom side of the substrate in the central region. A structured supporting structure is further applied to the bottom side of the substrate in the edge region and has a thickness which corresponds to a thickness of the contact layer.

Abstract: A semiconductor module includes a substrate composed of electrically insulating material. A structured metal layer for contact with an electrical component is applied to a top side of the substrate. The structured metal layer is applied to the substrate only in a central region of the substrate, so that an edge region which surrounds the central region and in which the structured metal layer is not applied to the substrate remains on the top side of the substrate. A contact layer for making contact with a cooling body is situated opposite the structured metal layer and applied to a bottom side of the substrate in the central region. A structured supporting structure is further applied to the bottom side of the substrate in the edge region and has a thickness which corresponds to a thickness of the contact layer.

Abstract: The disclosure relates to a power module including a semiconductor component configured to be contacted on the top side and the underside. The semiconductor component is configured to be electrically contacted on the top side by a leadframe matrix by contact pressure.