Patents by Inventor Rosario Mollica
Rosario Mollica has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11646175Abstract: An ion implantation has an ion source and a mass analyzer configured to form and mass analyze an ion beam. A bending element is positioned downstream of the mass analyzer, and respective first and second measurement apparatuses are positioned downstream and upstream of the bending element and configured to determine a respective first and second ion beam current of the ion beam. A workpiece scanning apparatus scans the workpiece through the ion beam. A controller is configured to determine an implant current of the ion beam at the workpiece and to control the workpiece scanning apparatus to control a scan velocity of the workpiece based on the implant current. The determination of the implant current of the ion beam is based, at least in part, on the first ion beam current and second ion beam current.Type: GrantFiled: February 14, 2020Date of Patent: May 9, 2023Assignee: Axcelis Technologies, Inc.Inventors: James DeLuca, Andy Ray, Neil Demario, Rosario Mollica
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Publication number: 20200266032Abstract: An ion implantation has an ion source and a mass analyzer configured to form and mass analyze an ion beam. A bending element is positioned downstream of the mass analyzer, and respective first and second measurement apparatuses are positioned downstream and upstream of the bending element and configured to determine a respective first and second ion beam current of the ion beam. A workpiece scanning apparatus scans the workpiece through the ion beam. A controller is configured to determine an implant current of the ion beam at the workpiece and to control the workpiece scanning apparatus to control a scan velocity of the workpiece based on the implant current. The determination of the implant current of the ion beam is based, at least in part, on the first ion beam current and second ion beam current.Type: ApplicationFiled: February 14, 2020Publication date: August 20, 2020Inventors: James DeLuca, Andy Ray, Neil Demario, Rosario Mollica
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Publication number: 20140357734Abstract: Embodiments disclosed herein can introduce low amounts of gas in a liquid with fast response time and low variation in concentration. In one embodiment, a gas is directed into an inlet on a gas contacting side of a porous element of a contactor and a liquid is directed into an inlet on a liquid contacting side of the porous element of the contactor. The liquid contacting side and the gas contacting side are separated by the porous element and a housing. The gas is removed from an outlet on the gas contacting side of the porous element at a reduced pressure compared to the pressure of the gas flowing into the inlet of the contactor. A liquid containing a portion of the gas transferred into the liquid is removed from an outlet on the liquid contacting side of the porous element, producing a dilute bubble free solution.Type: ApplicationFiled: August 19, 2014Publication date: December 4, 2014Inventors: Yanan Annie Xia, John Karl Niermeyer, Rosario Mollica, Gregg T. Conner
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Patent number: 8844909Abstract: Embodiments disclosed herein can introduce low amounts of gas in a liquid with fast response time and low variation in concentration. In one embodiment, a gas is directed into an inlet on a gas contacting side of a porous element of a contactor and a liquid is directed into an inlet on a liquid contacting side of the porous element of the contactor. The liquid contacting side and the gas contacting side are separated by the porous element and a housing. The gas is removed from an outlet on the gas contacting side of the porous element at a reduced pressure compared to the pressure of the gas flowing into the inlet of the contactor. A liquid containing a portion of the gas transferred into the liquid is removed from an outlet on the liquid contacting side of the porous element, producing a dilute bubble free solution.Type: GrantFiled: May 18, 2009Date of Patent: September 30, 2014Assignee: Entegris, Inc.Inventors: Yanan Annie Xia, J. Karl Niermeyer, Rosario Mollica, Gregg T. Conner
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Publication number: 20110180148Abstract: Embodiments disclosed herein can introduce low amounts of gas in a liquid with fast response time and low variation in concentration. In one embodiment, a gas is directed into an inlet on a gas contacting side of a porous element of a contactor and a liquid is directed into an inlet on a liquid contacting side of the porous element of the contactor. The liquid contacting side and the gas contacting side are separated by the porous element and a housing. The gas is removed from an outlet on the gas contacting side of the porous element at a reduced pressure compared to the pressure of the gas flowing into the inlet of the contactor. A liquid containing a portion of the gas transferred into the liquid is removed from an outlet on the liquid contacting side of the porous element, producing a dilute bubble free solution.Type: ApplicationFiled: May 18, 2009Publication date: July 28, 2011Inventors: Yanan Annie Xia, J. Karl Niermeyer, Rosario Mollica, Gregg T. Conner
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Patent number: 7547460Abstract: Methods and apparatus are provided for controlling dose uniformity in an ion implantation system. According to one embodiment of the invention, an initial scan waveform is adjusted to obtain a desired uniformity for use in a first implant process, and the adjusted scan waveform is stored. The stored scan waveform is recalled and used in a second implant process. According to a another embodiment of the invention, desired beam parameters are identified and, based on the desired beam parameters, a stored scan waveform is recalled for use in a uniformity adjustment process, and the uniformity adjustment process is performed. According to a further embodiment of the invention, an apparatus is provided that includes a beam profiler for measuring a current distribution of a scanned ion beam.Type: GrantFiled: September 12, 2001Date of Patent: June 16, 2009Assignee: Varian Semiconductor Equipment Associates, Inc.Inventors: Antonella Cucchetti, Joseph Olson, Gregory Gibilaro, Rosario Mollica
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Patent number: 7442944Abstract: An ion beam tuning method, system and program product for tuning an ion implanter system are disclosed. The invention obtains an ion beam profile of the ion beam by, for example, scanning the ion beam across a profiler that is within an implant chamber; and tunes the ion implanter system to maximize an estimated implant current based on the ion beam profile to simultaneously optimize total ion beam current and ion beam spot width, and maximize implant current. In addition, the tuning can also position the ion beam along a desired ion beam path based on the feedback of the spot beam center, which improves ion implanter system productivity and performance by reducing ion beam setup time and provides repeatable beam angle performance for each ion beam over many setups.Type: GrantFiled: October 7, 2004Date of Patent: October 28, 2008Assignee: Varian Semiconductor Equipment Associates, Inc.Inventors: Shengwu Chang, Antonella Cucchetti, Joseph P. Dzengeleski, Gregory R. Gibilaro, Rosario Mollica, Gregg A. Norris, Joseph C. Olson, Marie J. Welsch
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Publication number: 20080185044Abstract: Embodiments disclosed herein provide a pump or a multiple-pump system that can mix chemicals without dilution tanks and can dispense the mixture of chemicals in a precise and highly controllable manner, particularly useful in semiconductor manufacturing processes. In some embodiments, one or more piston pumps of similar displacement are used to mix and dispense the chemical directly. A first valve is opened to a first chemical source. A piston is moved in a first direction to a selected position in a chamber to draw the first chemical into the chamber. The first valve is closed and a second valve is opened to a second chemical source. The piston is moved in the first direction to a second position in the chamber to draw in the second chemical and mix the chemicals. The second valve is closed and the piston is moved to dispense the fluids through a dispense port.Type: ApplicationFiled: February 1, 2008Publication date: August 7, 2008Applicant: Entegris, Inc.Inventors: Michael Clarke, Marc Laverdiere, Robert F. McLoughlin, J. Karl Niermeyer, Joseph E. Smith, Rosario Mollica
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Patent number: 7394073Abstract: An angle measurement system for an ion beam includes a flag defining first and second features, wherein the second feature has a variable spacing from the first feature, a mechanism to translate the flag along a translation path so that the flag intercepts at least a portion of the ion beam, and a sensing device to detect the ion beam for different flag positions along the translation path and produce a sensor signal in response to the detected ion beam. The sensor signal and corresponding positions of the flag are representative of a vertical beam angle of the ion beam in a vertical plane. The sensing device may include a mask and a mechanism to translate the mask in order to define a beam current sensor on a portion of an associated Faraday sensor.Type: GrantFiled: January 20, 2006Date of Patent: July 1, 2008Assignee: Varian Semiconductor Equipment Associates, Inc.Inventors: James J. Cummings, Joseph Olson, Arthur H. Clough, Eric Hermanson, Rosario Mollica, Paul J. Murphy, Mark Donahue
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Patent number: 7202483Abstract: An angle measurement system for an ion beam includes a flag defining first and second features, wherein the second feature has a variable spacing from the first feature, a mechanism to translate the flag along a translation path so that the flag intercepts at least a portion of the ion beam, and a sensing device to detect the ion beam for different flag positions along the translation path and produce a sensor signal having a first signal component representative of the first feature and a second signal component representative of the second feature. The first and second signal components and corresponding positions of the flag are representative of an angle of the ion beam in a direction orthogonal to the translation path. The sensing device may be a two-dimensional array of beam current sensors. The system may provide measurements of horizontal and vertical beam angles while translating the flag in only one direction.Type: GrantFiled: April 5, 2005Date of Patent: April 10, 2007Inventors: Joseph C. Olson, Eric D. Hermanson, Rosario Mollica, Paul J. Murphy
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Patent number: 7189980Abstract: An apparatus and method are provided for optimizing ion implantation uniformity in a workpiece, such as a semiconductor wafer, which includes an ion beam generator for generating an ion beam, a beam scanning mechanism for diverging the ion beam and generating substantially parallel ion beam trajectories towards the workpiece, and an ion beam detector for measuring the ion beam current of the parallel ion beam trajectories as a function of the position of the ion beam detector. A uniformity controller filters the ion beam current measured by the ion beam detector to at least one predetermined resolution range and generates a uniformity signal to the beam scanning mechanism in response to the filtered ion beam current so that the workpiece is uniformly implanted. The uniformity controller determines a controllable frequency range for optimizing ion implantation uniformity control by making controllable frequencies observable and uncontrollable frequencies unobservable.Type: GrantFiled: December 18, 2003Date of Patent: March 13, 2007Assignee: Varian Semiconductor Equipment Associates, Inc.Inventor: Rosario Mollica
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Publication number: 20060289798Abstract: An angle measurement system for an ion beam includes a flag defining first and second features, wherein the second feature has a variable spacing from the first feature, a mechanism to translate the flag along a translation path so that the flag intercepts at least a portion of the ion beam, and a sensing device to detect the ion beam for different flag positions along the translation path and produce a sensor signal in response to the detected ion beam. The sensor signal and corresponding positions of the flag are representative of a vertical beam angle of the ion beam in a vertical plane. The sensing device may include a mask and a mechanism to translate the mask in order to define a beam current sensor on a portion of an associated Faraday sensor.Type: ApplicationFiled: January 20, 2006Publication date: December 28, 2006Applicant: Varian Semiconductor Equipment Associates, Inc.Inventors: James Cummings, Joseph Olson, Arthur Clough, Eric Hermanson, Rosario Mollica, Paul Murphy, Mark Donahue
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Publication number: 20060219936Abstract: An angle measurement system for an ion beam includes a flag defining first and second features, wherein the second feature has a variable spacing from the first feature, a mechanism to translate the flag along a translation path so that the flag intercepts at least a portion of the ion beam, and a sensing device to detect the ion beam for different flag positions along the translation path and produce a sensor signal having a first signal component representative of the first feature and a second signal component representative of the second feature. The first and second signal components and corresponding positions of the flag are representative of an angle of the ion beam in a direction orthogonal to the translation path. The sensing device may be a two-dimensional array of beam current sensors. The system may provide measurements of horizontal and vertical beam angles while translating the flag in only one direction.Type: ApplicationFiled: April 5, 2005Publication date: October 5, 2006Applicant: Varian Semiconductor Equipment Associates, Inc.Inventors: Joseph Olson, Eric Hermanson, Rosario Mollica, Paul Murphy
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Publication number: 20060076510Abstract: An ion beam tuning method, system and program product for tuning an ion implanter system are disclosed. The invention obtains an ion beam profile of the ion beam by, for example, scanning the ion beam across a profiler that is within an implant chamber; and tunes the ion implanter system to maximize an estimated implant current based on the ion beam profile to simultaneously optimize total ion beam current and ion beam spot width, and maximize implant current. In addition, the tuning can also position the ion beam along a desired ion beam path based on the feedback of the spot beam center, which improves ion implanter system productivity and performance by reducing ion beam setup time and provides repeatable beam angle performance for each ion beam over many setups.Type: ApplicationFiled: October 7, 2004Publication date: April 13, 2006Inventors: Shengwu Chang, Antonella Cucchetti, Joseph Dzengeleski, Gregory Gibilaro, Rosario Mollica, Gregg Norris, Joseph Olson, Marie Welsch
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Publication number: 20040256573Abstract: An apparatus and method are provided for optimizing ion implantation uniformity in a workpiece, such as a semiconductor wafer, which includes an ion beam generator for generating an ion beam, a beam scanning mechanism for diverging the ion beam and generating substantially parallel ion beam trajectories towards the workpiece, and an ion beam detector for measuring the ion beam current of the parallel ion beam trajectories as a function of the position of the ion beam detector. A uniformity controller filters the ion beam current measured by the ion beam detector to at least one predetermined resolution range and generates a uniformity signal to the beam scanning mechanism in response to the filtered ion beam current so that the workpiece is uniformly implanted. The uniformity controller determines a controllable frequency range for optimizing ion implantation uniformity control by making controllable frequencies observable and uncontrollable frequencies unobservable.Type: ApplicationFiled: December 18, 2003Publication date: December 23, 2004Applicant: Varian Semiconductor Equipment Associates, Inc.Inventor: Rosario Mollica
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Patent number: 6710359Abstract: Methods and apparatus are provided for adjusting the profile of a scanned ion beam. The spatial distribution of the unscanned ion beam is measured. The ion beam is scanned at an initial scan speed, and the beam profile of the scanned ion beam is measured. If the measured beam profile is not within specification, a scan speed correction that produces a desired profile correction is determined using a calculation which is based on the spatial distribution of the unscanned ion beam. The scan speed correction may be determined by convolving a candidate scan speed correction with the spatial distribution of the unscanned ion beam to produce a result and determining if the result is sufficiently close to the desired profile correction. A multi-dimensional search algorithm may be used to select the candidate scan speed correction. The ion beam is scanned at a corrected scan speed, which is based on the initial scan speed and the scan speed correction, to produce corrected beam profile.Type: GrantFiled: March 23, 2001Date of Patent: March 23, 2004Assignee: Varian Semiconductor Equipment Associates, Inc.Inventors: Joseph C. Olson, Rosario Mollica
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Publication number: 20020134948Abstract: Methods and apparatus are provided for adjusting the profile of a scanned ion beam. The spatial distribution of the unscanned ion beam is measured. The ion beam is scanned at an initial scan speed, and the beam profile of the scanned ion beam is measured. If the measured beam profile is not within specification, a scan speed correction that produces a desired profile correction is determined using a calculation which is based on the spatial distribution of the unscanned ion beam. The scan speed correction may be determined by convolving a candidate scan speed correction with the spatial distribution of the unscanned ion beam to produce a result and determining if the result is sufficiently close to the desired profile correction. A multi-dimensional search algorithm may be used to select the candidate scan speed correction. The ion beam is scanned at a corrected scan speed, which is based on the initial scan speed and the scan speed correction, to produce corrected beam profile.Type: ApplicationFiled: March 23, 2001Publication date: September 26, 2002Inventors: Joseph C. Olson, Rosario Mollica
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Publication number: 20020081788Abstract: Methods and apparatus are provided for controlling dose uniformity in an ion implantation system. According to one embodiment of the invention, an initial scan waveform is adjusted to obtain a desired uniformity for use in a first implant process, and the adjusted scan waveform is stored. The stored scan waveform is recalled and used in a second implant process. According to a another embodiment of the invention, desired beam parameters are identified and, based on the desired beam parameters, a stored scan waveform is recalled for use in a uniformity adjustment process, and the uniformity adjustment process is performed. According to a further embodiment of the invention, an apparatus is provided that includes a beam profiler for measuring a current distribution of a scanned ion beam.Type: ApplicationFiled: September 12, 2001Publication date: June 27, 2002Applicant: Varian Semiconductor Equipment Associates, Inc.Inventors: Antonella Cucchetti, Joseph Olson, Gregory Gibilaro, Rosario Mollica