Patents by Inventor Rose Kopf
Rose Kopf has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11811124Abstract: An apparatus that is a voltage-controlled splitting and/or switching apparatus comprising a waveguide for a radio frequency signal comprising at least one input and at least two outputs, wherein the waveguide is a cavity waveguide or a polymer microwave fiber waveguide, and the waveguide comprises at least a first branch and a second branch, at least one element comprising voltage reactive material in between electrodes and extending, at least partly, across at least one of the first branch and the second branch, and a voltage control caused to apply voltage to the at least one element.Type: GrantFiled: October 21, 2021Date of Patent: November 7, 2023Assignee: Nokia Technologies OyInventors: Dirk Wiegner, Wolfgang Tempi, Senad Bulja, Rose Kopf
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Patent number: 11594795Abstract: A switchable element, a device and a method for analogue and programmable computing operating on electromagnetic waves having a frequency, wherein the switchable element is configured to configured to, in response to an activation signal, switch from having a first dielectric permittivity for electromagnetic waves having a frequency to having a second dielectric permittivity for electromagnetic waves having the frequency, and the device comprises a plurality of the switchable elements that are adapted to be switched individually in accordance with the computing operation.Type: GrantFiled: August 28, 2020Date of Patent: February 28, 2023Assignee: Nokia Solutions and Networks OyInventors: Senad Bulja, Wolfgang Templ, Florian Pivit, Dirk Wiegner, Anna Zakrzewska, Pawel Rulikowski, Rose Kopf
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Publication number: 20230055602Abstract: Apparatus including a first transmission line for transmitting radio frequency, RF, signals and at least one RF device including at least one active semiconductor device for processing RF signals, wherein said at least one RF device is coupled to said first transmission line, and wherein said first transmission line includes an electro-chromic, EC, material a permittivity of which can be controlled by applying a first control voltage to said first transmission line.Type: ApplicationFiled: January 22, 2021Publication date: February 23, 2023Inventors: Dirk Wiegner, Wolfgang TEMPL, Senad BULJA, Rose KOPF
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Publication number: 20220131251Abstract: An apparatus that is a voltage-controlled splitting and/or switching apparatus comprising a waveguide for a radio frequency signal comprising at least one input and at least two outputs, wherein the waveguide is a cavity waveguide or a polymer microwave fiber waveguide, and the waveguide comprises at least a first branch and a second branch, at least one element comprising voltage reactive material in between electrodes and extending, at least partly, across at least one of the first branch and the second branch, and a voltage control caused to apply voltage to the at least one element.Type: ApplicationFiled: October 21, 2021Publication date: April 28, 2022Applicant: Nokia Technologies OyInventors: Dirk Wiegner, Wolfgang Templ, Senad Bulja, Rose Kopf
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Patent number: 11201634Abstract: A radio-frequency switching apparatus that can be used to turn a signal path on or off or to attenuate a radio-frequency signal. The switching apparatus comprises at least one radio-frequency input, at least one radio-frequency output, at least one transmission line providing a signal path between the at least one radio-frequency input and the at least one radio-frequency output, and at least one transition metal oxide portion. The radio-frequency switching apparatus also comprises direct current blocking means electrically coupled between the at least one transition metal portion and the at least one radio-frequency input. The radio-frequency switching apparatus also comprises biasing means for providing a bias across the at least one transition metal oxide portion such that power transferred between the radio-frequency input and the radio-frequency output is controlled by controlling the bias level across the at least one transition metal oxide portion.Type: GrantFiled: February 18, 2021Date of Patent: December 14, 2021Assignee: Nokia Technologies OyInventors: Senad Bulja, Dirk Wiegner, Wolfgang Templ, Rose Kopf
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Publication number: 20210306020Abstract: A radio-frequency switching apparatus that can be used to turn a signal path on or off or to attenuate a radio-frequency signal. The switching apparatus comprises at least one radio-frequency input, at least one radio-frequency output, at least one transmission line providing a signal path between the at least one radio-frequency input and the at least one radio-frequency output, and at least one transition metal oxide portion. The radio-frequency switching apparatus also comprises direct current blocking means electrically coupled between the at least one transition metal portion and the at least one radio-frequency input. The radio-frequency switching apparatus also comprises biasing means for providing a bias across the at least one transition metal oxide portion such that power transferred between the radio-frequency input and the radio-frequency output is controlled by controlling the bias level across the at least one transition metal oxide portion.Type: ApplicationFiled: February 18, 2021Publication date: September 30, 2021Inventors: Senad BULJA, Dirk WIEGNER, Wolfgang TEMPL, Rose KOPF
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Publication number: 20210063833Abstract: A switchable element, a device and a method for analogue and programmable computing operating on electromagnetic waves having a frequency, wherein the switchable element is configured to configured to, in response to an activation signal, switch from having a first dielectric permittivity for electromagnetic waves having a frequency to having a second dielectric permittivity for electromagnetic waves having the frequency, and the device comprises a plurality of the switchable elements that are adapted to be switched individually in accordance with the computing operation.Type: ApplicationFiled: August 28, 2020Publication date: March 4, 2021Inventors: Senad Bulja, Wolfgang Templ, Florian Pivit, Dirk Wiegner, Anna Zakrzewska, Pawel Rulikowski, Rose Kopf
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Patent number: 10903568Abstract: An antenna element includes a patch antenna and a microstrip line separated by an electrochromic material to tune the element. A reflectarray of a plurality of antenna elements is formed on a substrate. The dielectric permitivities of the electrochromic material may be controlled both during manufacture and during operation of the antenna to provide a phase shift to the antenna elements and beamform a signal radiated by the antenna. A bias line may be used to change a shape, direction or circular polarity of a beam radiating from the antenna.Type: GrantFiled: November 20, 2018Date of Patent: January 26, 2021Assignee: NOKIA TECHNOLOGIES OYInventors: Senad Bulja, Rose Kopf, Robert Cahill, Majid Norooziarab
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Patent number: 10732476Abstract: An electrochromic (EC) cell having improved dielectric tunability and lower dielectric losses is disclosed. A multi-layer structure includes at least one electrochromic layer of a transition metal oxide between electrode layers. Two electrolyte layers are located on either side of the at least one electrochromic layer and next to the electrode layers. An ion storage film layer of a transition metal oxide may be provided between the electrochromic layer and one of the electrolyte layers. This structure prevents the shortening of the channel height when a voltage is applied therefore reducing dielectric losses.Type: GrantFiled: May 14, 2018Date of Patent: August 4, 2020Assignee: NOKIA SOLUTIONS AND NETWORKS OYInventors: Senad Bulja, Rose Kopf, Florian Pivit, Wolfgang Templ
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Publication number: 20200161759Abstract: An antenna element includes a patch antenna and a microstrip line separated by an electrochromic material to tune the element. A reflectarray of a plurality of antenna elements is formed on a substrate. The dielectric permitivities of the electrochromic material may be controlled both during manufacture and during operation of the antenna to provide a phase shift to the antenna elements and beamform a signal radiated by the antenna. A bias line may be used to change a shape, direction or circular polarity of a beam radiating from the antenna.Type: ApplicationFiled: November 20, 2018Publication date: May 21, 2020Inventors: Senad BULJA, Rose KOPF, Robert CAHILL, Majid NOROOZIARAB
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Publication number: 20190346730Abstract: An electrochromic (EC) cell having improved dielectric tunability and lower dielectric losses is disclosed. A multi-layer structure includes at least one electrochromic layer of a transition metal oxide between electrode layers. Two electrolyte layers are located on either side of the at least one electrochromic layer and next to the electrode layers. An ion storage film layer of a transition metal oxide may be provided between the electrochromic layer and one of the electrolyte layers. This structure prevents the shortening of the channel height when a voltage is applied therefore reducing dielectric losses.Type: ApplicationFiled: May 14, 2018Publication date: November 14, 2019Inventors: Senad BULJA, Rose KOPF, Florian PIVIT, Wolfgang TEMPL
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Patent number: 10187107Abstract: An electrochromic (EC) switch is disclosed and claimed. The EC switch includes an EC region and an electrolyte region separated by a dielectric region on a ground plane. A microstrip configured to transmit an RF signal is adjacent to and in electrical contact with the EC region. A conductive pad is adjacent to the electrolyte region and a bias line couples the microstrip to the electrolyte region. Voltages applied between the ground plane and the conductive pad and between the conductive pad and the bias line switch the microstrip. The EC switch may be incorporated within a wide variety of RF devices, for example, attenuators, phase shifters and antennas.Type: GrantFiled: April 23, 2018Date of Patent: January 22, 2019Assignee: Nokia Solutions and Networks OyInventors: Senad Bulja, Rose Kopf
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Patent number: 7514359Abstract: The present invention provides a method for adhering dielectric layers to metals, in particular inert metals, using an adhesive layer comprising silicon-rich silicon nitride. Good adhesion is achieved at temperatures of less than 300° C., thereby facilitating the fabrication of semiconductor structures containing II-VI and III-V semiconductors.Type: GrantFiled: July 19, 2005Date of Patent: April 7, 2009Assignee: Alcatel-Lucent USA Inc.Inventors: Yang Yang, Chun-Ting Liu, Rose Kopf, Chen-Jung Chen, Laylay Chua
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Patent number: 6989579Abstract: The present invention provides a method for adhering dielectric layers to metals, in particular inert metals, using an adhesive layer comprising silicon-rich silicon nitride. Good adhesion is achieved at temperatures of less than 300° C., thereby facilitating the fabrication of semiconductor structures containing II–VI and III–V semiconductors.Type: GrantFiled: January 14, 2003Date of Patent: January 24, 2006Assignee: Lucent Technologies Inc.Inventors: Yang Yang, Chun-Ting Liu, Rose Kopf, Chen-Jung Chen, Laylay Chua
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Publication number: 20050255692Abstract: The present invention provides a method for adhering dielectric layers to metals, in particular inert metals, using an adhesive layer comprising silicon-rich silicon nitride. Good adhesion is achieved at temperatures of less than 300° C., thereby facilitating the fabrication of semiconductor structures containing II-VI and III-V semiconductors.Type: ApplicationFiled: July 19, 2005Publication date: November 17, 2005Applicant: Lucent Technologies Inc.Inventors: Yang Yang, Chun-Ting Liu, Rose Kopf, Chen-Jung Chen, Lay-Lay Chua
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Publication number: 20050230784Abstract: The present invention provides a method for adhering dielectric layers to metals, in particular inert metals, using an adhesive layer comprising silicon-rich silicon nitride. Good adhesion is achieved at temperatures of less than 300° C., thereby facilitating the fabrication of semiconductor structures containing II-VI and III-V semiconductors.Type: ApplicationFiled: January 14, 2003Publication date: October 20, 2005Applicant: Lucent Technologies Inc.Inventors: Yang Yang, Chun-Ting Liu, Rose Kopf, Chen-Jung Chen, Lay-Lay Chua
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Publication number: 20050156195Abstract: A method for fabricating a bipolar transistor includes forming a vertical sequence of semiconductor layers, forming an implant mask on the last formed semiconductor layer, and implanting dopant ions into a portion of one or more of the semiconductor layers. The sequence of semiconductor layers includes a collector layer, a base layer that is in contact with the collector layer, and an emitter layer that is in contact with the base layer. The implanting uses a process in which the implant mask stops dopant ions from penetrating into a portion of the sequence of layers.Type: ApplicationFiled: March 14, 2005Publication date: July 21, 2005Inventors: Young-Kai Chen, Lay-Lay Chua, Vincent Houtsma, Rose Kopf, Andreas Leven, Chun-Ting Liu, Wei-Jer Sung, Yang Yang
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Publication number: 20050032323Abstract: A method for fabricating a bipolar transistor includes forming collector, base, and emitter semiconductor layers on a substrate such that the layers form a vertical sequence with respect to an adjacent surface of the substrate. The method includes etching away a portion of a top one of the semiconductor layers to expose a portion of the base semiconductor layer and then, growing semiconductor on the exposed portion of the base layer. The top one of the semiconductor layers is the layer of the sequence that is located farthest from the substrate. The growing causes grown semiconductor to laterally surround a vertical portion of the top one of the semiconductor layers.Type: ApplicationFiled: July 21, 2003Publication date: February 10, 2005Inventors: Young-Kai Chen, Rose Kopf, Wei-Jer Sung, Nils Weimann