Abstract: An apparatus that is a voltage-controlled splitting and/or switching apparatus comprising a waveguide for a radio frequency signal comprising at least one input and at least two outputs, wherein the waveguide is a cavity waveguide or a polymer microwave fiber waveguide, and the waveguide comprises at least a first branch and a second branch, at least one element comprising voltage reactive material in between electrodes and extending, at least partly, across at least one of the first branch and the second branch, and a voltage control caused to apply voltage to the at least one element.

Abstract: A switchable element, a device and a method for analogue and programmable computing operating on electromagnetic waves having a frequency, wherein the switchable element is configured to configured to, in response to an activation signal, switch from having a first dielectric permittivity for electromagnetic waves having a frequency to having a second dielectric permittivity for electromagnetic waves having the frequency, and the device comprises a plurality of the switchable elements that are adapted to be switched individually in accordance with the computing operation.

Abstract: Apparatus including a first transmission line for transmitting radio frequency, RF, signals and at least one RF device including at least one active semiconductor device for processing RF signals, wherein said at least one RF device is coupled to said first transmission line, and wherein said first transmission line includes an electro-chromic, EC, material a permittivity of which can be controlled by applying a first control voltage to said first transmission line.

Abstract: An apparatus that is a voltage-controlled splitting and/or switching apparatus comprising a waveguide for a radio frequency signal comprising at least one input and at least two outputs, wherein the waveguide is a cavity waveguide or a polymer microwave fiber waveguide, and the waveguide comprises at least a first branch and a second branch, at least one element comprising voltage reactive material in between electrodes and extending, at least partly, across at least one of the first branch and the second branch, and a voltage control caused to apply voltage to the at least one element.

Abstract: A radio-frequency switching apparatus that can be used to turn a signal path on or off or to attenuate a radio-frequency signal. The switching apparatus comprises at least one radio-frequency input, at least one radio-frequency output, at least one transmission line providing a signal path between the at least one radio-frequency input and the at least one radio-frequency output, and at least one transition metal oxide portion. The radio-frequency switching apparatus also comprises direct current blocking means electrically coupled between the at least one transition metal portion and the at least one radio-frequency input. The radio-frequency switching apparatus also comprises biasing means for providing a bias across the at least one transition metal oxide portion such that power transferred between the radio-frequency input and the radio-frequency output is controlled by controlling the bias level across the at least one transition metal oxide portion.

Abstract: A radio-frequency switching apparatus that can be used to turn a signal path on or off or to attenuate a radio-frequency signal. The switching apparatus comprises at least one radio-frequency input, at least one radio-frequency output, at least one transmission line providing a signal path between the at least one radio-frequency input and the at least one radio-frequency output, and at least one transition metal oxide portion. The radio-frequency switching apparatus also comprises direct current blocking means electrically coupled between the at least one transition metal portion and the at least one radio-frequency input. The radio-frequency switching apparatus also comprises biasing means for providing a bias across the at least one transition metal oxide portion such that power transferred between the radio-frequency input and the radio-frequency output is controlled by controlling the bias level across the at least one transition metal oxide portion.

Abstract: A switchable element, a device and a method for analogue and programmable computing operating on electromagnetic waves having a frequency, wherein the switchable element is configured to configured to, in response to an activation signal, switch from having a first dielectric permittivity for electromagnetic waves having a frequency to having a second dielectric permittivity for electromagnetic waves having the frequency, and the device comprises a plurality of the switchable elements that are adapted to be switched individually in accordance with the computing operation.

Abstract: An antenna element includes a patch antenna and a microstrip line separated by an electrochromic material to tune the element. A reflectarray of a plurality of antenna elements is formed on a substrate. The dielectric permitivities of the electrochromic material may be controlled both during manufacture and during operation of the antenna to provide a phase shift to the antenna elements and beamform a signal radiated by the antenna. A bias line may be used to change a shape, direction or circular polarity of a beam radiating from the antenna.

Abstract: An electrochromic (EC) cell having improved dielectric tunability and lower dielectric losses is disclosed. A multi-layer structure includes at least one electrochromic layer of a transition metal oxide between electrode layers. Two electrolyte layers are located on either side of the at least one electrochromic layer and next to the electrode layers. An ion storage film layer of a transition metal oxide may be provided between the electrochromic layer and one of the electrolyte layers. This structure prevents the shortening of the channel height when a voltage is applied therefore reducing dielectric losses.

Abstract: An antenna element includes a patch antenna and a microstrip line separated by an electrochromic material to tune the element. A reflectarray of a plurality of antenna elements is formed on a substrate. The dielectric permitivities of the electrochromic material may be controlled both during manufacture and during operation of the antenna to provide a phase shift to the antenna elements and beamform a signal radiated by the antenna. A bias line may be used to change a shape, direction or circular polarity of a beam radiating from the antenna.

Abstract: An electrochromic (EC) cell having improved dielectric tunability and lower dielectric losses is disclosed. A multi-layer structure includes at least one electrochromic layer of a transition metal oxide between electrode layers. Two electrolyte layers are located on either side of the at least one electrochromic layer and next to the electrode layers. An ion storage film layer of a transition metal oxide may be provided between the electrochromic layer and one of the electrolyte layers. This structure prevents the shortening of the channel height when a voltage is applied therefore reducing dielectric losses.

Abstract: An electrochromic (EC) switch is disclosed and claimed. The EC switch includes an EC region and an electrolyte region separated by a dielectric region on a ground plane. A microstrip configured to transmit an RF signal is adjacent to and in electrical contact with the EC region. A conductive pad is adjacent to the electrolyte region and a bias line couples the microstrip to the electrolyte region. Voltages applied between the ground plane and the conductive pad and between the conductive pad and the bias line switch the microstrip. The EC switch may be incorporated within a wide variety of RF devices, for example, attenuators, phase shifters and antennas.

Abstract: The present invention provides a method for adhering dielectric layers to metals, in particular inert metals, using an adhesive layer comprising silicon-rich silicon nitride. Good adhesion is achieved at temperatures of less than 300° C., thereby facilitating the fabrication of semiconductor structures containing II-VI and III-V semiconductors.

Abstract: The present invention provides a method for adhering dielectric layers to metals, in particular inert metals, using an adhesive layer comprising silicon-rich silicon nitride. Good adhesion is achieved at temperatures of less than 300° C., thereby facilitating the fabrication of semiconductor structures containing II–VI and III–V semiconductors.

Abstract: The present invention provides a method for adhering dielectric layers to metals, in particular inert metals, using an adhesive layer comprising silicon-rich silicon nitride. Good adhesion is achieved at temperatures of less than 300° C., thereby facilitating the fabrication of semiconductor structures containing II-VI and III-V semiconductors.

Abstract: The present invention provides a method for adhering dielectric layers to metals, in particular inert metals, using an adhesive layer comprising silicon-rich silicon nitride. Good adhesion is achieved at temperatures of less than 300° C., thereby facilitating the fabrication of semiconductor structures containing II-VI and III-V semiconductors.

Abstract: A method for fabricating a bipolar transistor includes forming a vertical sequence of semiconductor layers, forming an implant mask on the last formed semiconductor layer, and implanting dopant ions into a portion of one or more of the semiconductor layers. The sequence of semiconductor layers includes a collector layer, a base layer that is in contact with the collector layer, and an emitter layer that is in contact with the base layer. The implanting uses a process in which the implant mask stops dopant ions from penetrating into a portion of the sequence of layers.

Abstract: A method for fabricating a bipolar transistor includes forming collector, base, and emitter semiconductor layers on a substrate such that the layers form a vertical sequence with respect to an adjacent surface of the substrate. The method includes etching away a portion of a top one of the semiconductor layers to expose a portion of the base semiconductor layer and then, growing semiconductor on the exposed portion of the base layer. The top one of the semiconductor layers is the layer of the sequence that is located farthest from the substrate. The growing causes grown semiconductor to laterally surround a vertical portion of the top one of the semiconductor layers.