Abstract: A method of making a deposit on a component made of a nickel or cobalt based superalloy is described wherein a deposit material consisting of reactive powders corresponding to an intermetallic material or of a superalloy powder is deposited on the component before placing it in a chamber and subjecting it to a neutral gas at a hydrostatic pressure of up to 1.5 GPa, the chamber being provided with heater means for producing a controlled temperature of up to 1200.degree. C. at a rate of increase of from 5.degree. C. to 120.degree. C. per minute and a thermal gradient of 200.degree. C. between the ends of the component, and the temperature and pressure conditions in the chamber are selected such that the deposit material undergoes a synthesis reaction by self-propagated combustion under high pressure so as to obtain densification of the deposit and a metallurgical bonding between the deposit and the component.

Abstract: Silver, thallium, copper and tellurium-based thermoelectric semiconductor materials, characterized in that they are represented by the general formula (I)Ag.sub.x Cu.sub.y T1Te.sub.1+z (I)wherein, x, y and z verify the ratios:0.55<x<0.75; 0.25<y<0.40 and 0<z<0.10.