Patents by Inventor Rosemary A. Previti-Kelly
Rosemary A. Previti-Kelly has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 7144490Abstract: A method for selective electroplating of a semiconductor input/output (I/O) pad includes forming a titanium-tungsten (TiW) layer over a passivation layer on a semiconductor substrate, the TiW layer further extending into an opening formed in the passivation layer for exposing the I/O pad, such that the TiW layer covers sidewalls of the opening and a top surface of the I/O pad. A seed layer is formed over the TiW layer, and portions of the seed layer are selectively removed such that remaining seed layer material corresponds to a desired location of interconnect metallurgy for the I/O pad. At least one metal layer is electroplated over the remaining seed layer material, using the TiW layer as a conductive electroplating medium.Type: GrantFiled: November 18, 2003Date of Patent: December 5, 2006Assignee: International Business Machines CorporationInventors: Tien-Jen Cheng, David E. Eichstadt, Jonathan H. Griffith, Sarah H. Knickerbocker, Rosemary A. Previti-Kelly, Roger A. Quon, Kamalesh K. Srivastava, Keith Kwong-Hon Wong
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Publication number: 20050103636Abstract: A method for selective electroplating of a semiconductor input/output (I/O) pad includes forming a titanium-tungsten (TiW) layer over a passivation layer on a semiconductor substrate, the TiW layer further extending into an opening formed in the passivation layer for exposing the I/O pad, such that the TiW layer covers sidewalls of the opening and a top surface of the I/O pad. A seed layer is formed over the TiW layer, and portions of the seed layer are selectively removed such that remaining seed layer material corresponds to a desired location of interconnect metallurgy for the I/O pad. At least one metal layer is electroplated over the remaining seed layer material, using the TiW layer as a conductive electroplating medium.Type: ApplicationFiled: November 18, 2003Publication date: May 19, 2005Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Tien-Jen Cheng, David Eichstadt, Jonathan Griffith, Sarah Knickerbocker, Rosemary Previti-Kelly, Roger Quon, Kamalesh Srivastava, Keith Wong
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Patent number: 6835973Abstract: A fusible link for a semiconductor device comprises an insulating substrate and a conductive line pair on the surface of the insulating substrate, with the conductive line pair having spaced ends. A polymer is disposed over the insulating substrate and between the conductive line pair ends. The polymer is capable of being changed from a non-conductive to a conductive state upon exposure to an energy beam. Preferably, the polymer comprises a polyimide, more preferably, a polymer/onium salt mixture, most preferably, a polyaniline polymer doped with a triphenylsufonium salt. The link may further comprise a low &kgr; nanopore/nanofoam dielectric material adjacent the conductive line ends.Type: GrantFiled: May 31, 2002Date of Patent: December 28, 2004Assignee: International Business Machines CorporationInventors: Timothy H. Daubenspeck, William A. Klaasen, William T. Motsiff, Rosemary A. Previti-Kelly, Jed H. Rankin
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Patent number: 6713838Abstract: A method and structure for blowing a fuse including removing an insulator above a fuse link and etching the fuse link.Type: GrantFiled: October 29, 2001Date of Patent: March 30, 2004Assignee: International Business Machines CorporationInventors: Wilbur D. Pricer, Rosemary A. Previti-Kelly, William T. Motsiff
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Patent number: 6495917Abstract: A method and structure for a semiconductor chip includes a plurality of layers of interconnect metallurgy, at least one layer of deformable dielectric material over the interconnect metallurgy, at least one input/output bonding pad, and a support structure that includes a substantially rigid dielectric in a supporting relationship to the pad that avoids crushing the deformable dielectric material.Type: GrantFiled: March 17, 2000Date of Patent: December 17, 2002Assignee: International Business Machines CorporationInventors: John J. Ellis-Monaghan, Paul M. Feeney, Robert M. Geffken, Howard S. Landis, Rosemary A. Previti-Kelly, Bette L. Bergman Reuter, Matthew J. Rutten, Anthony K. Stamper, Sally J. Yankee
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Patent number: 6496053Abstract: A structure and method for a programming device or a fuse includes a capacitive circuit having a capacitance which is alterable. The capacitive circuit can include a first capacitor, a fuse link connected to the first capacitor and a second capacitor connected to the fuse link, wherein removing a portion of the fuse link changes the capacitance.Type: GrantFiled: October 13, 1999Date of Patent: December 17, 2002Assignee: International Business Machines CorporationInventors: Timothy Daubenspeck, Kurt R. Kimmel, William A. Klaasen, William T. Motsiff, Rosemary A. Previti-Kelly, W David Pricer, Jed H. Rankin
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Publication number: 20020182837Abstract: A fusible link for a semiconductor device comprises an insulating substrate and a conductive line pair on the surface of the insulating substrate, with the conductive line pair having spaced ends. A polymer is disposed over the insulating substrate and between the conductive line pair ends. The polymer is capable of being changed from a non-conductive to a conductive state upon exposure to an energy beam. Preferably, the polymer comprises a polyimide, more preferably, a polymer/onium salt mixture, most preferably, a polyaniline polymer doped with a triphenylsufonium salt. The link may further comprise a low k nanopore/nanofoam dielectric material adjacent the conductive line ends.Type: ApplicationFiled: May 31, 2002Publication date: December 5, 2002Applicant: International Business Machines CorporationInventors: Timothy H. Daubenspeck, William A. Klaasen, William T. Motsiff, Rosemary A. Previti-Kelly, Jed H. Rankin
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Patent number: 6458630Abstract: A fusible link for a semiconductor device comprises an insulating substrate and a conductive line pair on the surface of the insulating substrate, with the conductive line pair having spaced ends. A polymer is disposed over the insulating substrate and between the conductive line pair ends. The polymer is capable of being changed from a non-conductive to a conductive state upon exposure to an energy beam. Preferably, the polymer comprises a polyimide, more preferably, a polymer/onium salt mixture, most preferably, a polyaniline polymer doped with a triphenylsufonium salt. The link may further comprise a low k nanopore/nanofoam dielectric material adjacent the conductive line ends.Type: GrantFiled: October 14, 1999Date of Patent: October 1, 2002Assignee: International Business Machines CorporationInventors: Timothy H. Daubenspeck, William A. Klaasen, William T. Motsiff, Rosemary A. Previti-Kelly, Jed H. Rankin
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Patent number: 6455434Abstract: The present invention provides a method of preventing the build-up of polishing material within low areas of a substrate during polishing. Following the blanket deposition of a first layer, a selectively removable material is deposited over the first layer, wherein the selectively removable material fills the low areas. A surface of the substrate is polished removing the excess first layer and selectively removable material from the surface, leaving the first layer and selectively removable material within the low area. Following polishing, the selectively removable material is removed from the low areas prior to the deposition of a second layer.Type: GrantFiled: October 23, 2001Date of Patent: September 24, 2002Assignee: International Business Machines CorporationInventors: Chad R. Binkerd, Jose L. Cruz, Timothy C. Krywanczyk, Brian D. Pfeifer, Rosemary A. Previti-Kelly, Patricia Schink, Amye L. Wells
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Patent number: 6452265Abstract: A multi-chip module is constructed by aligning prewired chips on a support wafer and depositing a nonconductive thermally conductive and electrically nonconductive material having a coefficient of thermal expansion that approximate that of the chips (e.g. silicon, silicon carbide, silicon germanium, germanium or SiCGe) to surround chips. After removal of the support wafer, processing of multi-chip module is finished with wiring on a shared surface of multi-chip module and chip surface.Type: GrantFiled: January 28, 2000Date of Patent: September 17, 2002Assignee: International Business Machines CorporationInventors: Toshiharu Furukawa, Mark C. Hakey, Steven J. Holmes, David V. Horak, Rosemary A. Previti-Kelly, Edmund Sprogis
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Publication number: 20020037606Abstract: A method and structure for blowing a fuse including removing an insulator above a fuse link and etching the fuse link.Type: ApplicationFiled: October 29, 2001Publication date: March 28, 2002Inventors: Wilbur D. Pricer, Rosemary A. Previti-Kelly, William T. Motsiff
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Patent number: 6335229Abstract: A method and structure for blowing a fuse including removing an insulator above a fuse link and etching the fuse link.Type: GrantFiled: October 13, 1999Date of Patent: January 1, 2002Assignee: International Business Machines CorporationInventors: Wilbur D. Pricer, Rosemary A. Previti-Kelly, William T. Motsiff
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Patent number: 5569731Abstract: N,N' disubstituted perylene diamide, useful in the fabrication of semiconductor devices, which exhibit good planarity and gap-fill characteristics, the cured composites of which are capable of withstanding temperatures in excess of 500.degree. C.Type: GrantFiled: June 7, 1995Date of Patent: October 29, 1996Inventors: Harold G. Linde, Rosemary A. Previti-Kelly, Thomas J. Reen
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Patent number: 5552638Abstract: A process for producing a plurality of metallized vias in a polyimide dielectric is disclosed. The process includes depositing a polyimide precursor, then a silane and finally a metal, after patterning the polyimide and silane. The sandwich is heated to completely imidize the polyimide, crosslink the silane and anneal the metal simultaneously. The excess metal overlying the polyimide between the vias is removed by chemical mechanical polishing using the crosslinked silane as a polish stop.Type: GrantFiled: December 5, 1994Date of Patent: September 3, 1996Assignee: International Business Machines CorporationInventors: Loretta J. O'Connor, Rosemary A. Previti-Kelly, Thomas J. Reen
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Patent number: 5503961Abstract: A process is disclosed for forming multilayered polyimide structure from negative photosensitive polyimide precursors. An initial polyimide layer is deposited and imagewise exposed. The unexposed portions of the initial polyimide layer are inhibited and then a second polyimide layer is deposited and likewise imagewise exposed. The films are developed, thereby forming a multilayer polyimide structure. After formation of the multilayer polyimide structure, a conductive material is applied on a substrate and then the polyimide layers are lifted off thereby forming a desired pattern of metallization.Type: GrantFiled: November 2, 1994Date of Patent: April 2, 1996Assignee: International Business Machines CorporationInventors: Harold G. Linde, Rosemary A. Previti-Kelly, Thomas J. Reen
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Patent number: 5466636Abstract: A semiconductor fabrication process for forming borderless contacts (130, 170, 172) using a removable mandrel (110). The process involves depositing a mandrel on an underlying barrier layer (100) designed to protect underlying structures (40) formed on a substrate (24). The mandrel is made from a material that will etch at a faster rate than the barrier layer so as to permit the formation of openings in the mandrel to be stopped on the barrier layer without penetrating such layer. After depositing a contact (130) in a first opening (120) formed in the mandrel, a second opening (140) is formed and a second contact (170) is deposited therein. Thereafter, the mandrel is removed and replaced with a layer of solid dielectric material (180).Type: GrantFiled: September 17, 1992Date of Patent: November 14, 1995Assignee: International Business Machines CorporationInventors: John E. Cronin, Carter W. Kaanta, Donald M. Kenney, Michael L. Kerbaugh, Howard S. Landis, Brian J. Machesney, Paul Parries, Rosemary A. Previti-Kelly, John F. Rembetski
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Patent number: 5451655Abstract: Thermostable compounds are prepared by mixing perylene dianhydride with one or more aminosilanes in a molar ratio of 1:4 in an inert solvent, and the aminosilanes may comprise aminoalkylakoxysilanes. Upon heating the mixture a thermostable coating is formed. Prior to heating the mixture may be spin-applied to a substrate. The coating may be used in semiconductor device fabrication as the mixture has good spin-on characteristics with the cured compound being thermally stable over 600.degree. C. and having good etch characteristics.Type: GrantFiled: May 27, 1994Date of Patent: September 19, 1995Assignee: International Business Machines CorporationInventors: Harold G. Linde, Rosemary A. Previti-Kelly, Thomas J. Reen
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Patent number: 5397741Abstract: A process for producing a plurality of metallized vias in a polyimide dielectric is disclosed. The process includes depositing a polyimide precursor, then a silane and finally a metal, after patterning the polyimide and silane. The sandwich is heated to completely imidize the polyimide, crosslink the silane and anneal the metal simultaneously. The excess metal overlying the polyimide between the vias is removed by chemical mechanical polishing using the crosslinked silane as a polish stop.Type: GrantFiled: March 29, 1993Date of Patent: March 14, 1995Assignee: International Business Machines CorporationInventors: Loretta J. O'Connor, Rosemary A. Previti-Kelly, Thomas J. Reen
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Patent number: 5326430Abstract: A micro electrostatic cooling fan arrangement is provided which includes a heat source having a planar surface, a stator attached to the heat source, an axle attached to the heat source and spaced from the stator, a rotary element including a hub having an aperture therein and a fan blade, the axle passing through the aperture of the hub and the fan blade having a major surface thereof disposed at an angle with respect to the surface of the heat source and attached to the hub at one end, with the other end of the fan blade being adjacent to but spaced from the stator and a voltage source applied to the stator having sufficient voltage to charge the fan blade.Type: GrantFiled: December 7, 1993Date of Patent: July 5, 1994Assignee: International Business Machines CorporationInventors: John E. Cronin, Rosemary A. Previti-Kelly, James G. Ryan, Timothy D. Sullivan
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Patent number: 5296775Abstract: A micro electrostatic cooling fan arrangement is provided which includes a heat source having a planar surface, a stator attached to the heat source, an axle attached to the heat source and spaced from the stator, a rotary element including a hub having an aperture therein and a fan blade, the axle passing through the aperture of the hub and the fan blade having a major surface thereof disposed at an angle with respect to the surface of the heat source and attached to the hub at one end, with the other end of the fan blade being adjacent to but spaced from the stator and a voltage source applied to the stator having sufficient voltage to charge the fan blade.Type: GrantFiled: September 24, 1992Date of Patent: March 22, 1994Assignee: International Business Machines CorporationInventors: John E. Cronin, Rosemary A. Previti-Kelly, James G. Ryan, Timothy D. Sullivan