Patents by Inventor Roshan TIRUKKONDA

Roshan TIRUKKONDA has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Multibit ferroelectric memory cells and methods for forming the same
    Patent number: 11450687
    Abstract: A three-dimensional memory device includes an alternating stack of insulating layers and electrically conductive layers and memory stack structures vertically extending through the alternating stack. Each of the memory stack structures includes a vertical semiconductor channel and a vertical stack of ferroelectric memory elements surrounding the vertical semiconductor channel and located at levels of the electrically conductive layers. Each of the ferroelectric memory elements includes a respective vertical stack of a first ferroelectric material portion and a second ferroelectric material portion that differs from the first ferroelectric material portion by at least one of a material composition and a lateral thickness.
    Type: Grant
    Filed: December 15, 2020
    Date of Patent: September 20, 2022
    Assignee: SANDISK TECHNOLOGIES LLC
    Inventors: Roshan Tirukkonda, Ramy Nashed Bassely Said, Senaka Kanakamedala, Rahul Sharangpani, Raghuveer S. Makala, Adarsh Rajashekhar, Fei Zhou
  • MULTIBIT FERROELECTRIC MEMORY CELLS AND METHODS FOR FORMING THE SAME
    Publication number: 20220189993
    Abstract: A three-dimensional memory device includes an alternating stack of insulating layers and electrically conductive layers and memory stack structures vertically extending through the alternating stack. Each of the memory stack structures includes a vertical semiconductor channel and a vertical stack of ferroelectric memory elements surrounding the vertical semiconductor channel and located at levels of the electrically conductive layers. Each of the ferroelectric memory elements includes a respective vertical stack of a first ferroelectric material portion and a second ferroelectric material portion that differs from the first ferroelectric material portion by at least one of a material composition and a lateral thickness.
    Type: Application
    Filed: December 15, 2020
    Publication date: June 16, 2022
    Inventors: Roshan TIRUKKONDA, Ramy Nashed Bassely SAID, Senaka KANAKAMEDALA, Rahul SHARANGPANI, Raghuveer S. MAKALA, Adarsh RAJASHEKHAR, Fei ZHOU