Abstract: A multi-junction photovoltaic cell includes a substrate and a back contact layer formed on the substrate. A low bandgap Group IB-IIIB-VIB2 material solar absorber layer is formed on the back contact layer. A heterojunction partner layer is formed on the low bandgap solar absorber layer, to help form the bottom cell junction, and the heterojunction partner layer includes at least one layer of a high resistivity material having a resistivity of at least 100 ohms-centimeter. The high resistivity material has the formula (Zn and/or Mg)(S, Se, O, and/or OH). A conductive interconnect layer is formed above the heterojunction partner layer, and at least one additional single-junction photovoltaic cell is formed on the conductive interconnect layer, as a top cell. The top cell may have an amorphous Silicon or p-type Cadmium Selenide solar absorber layer. Cadmium Selenide may be converted from n-type to p-type with a chloride doping process.

Abstract: A multi-junction photovoltaic cell includes a substrate and a back contact layer formed on the substrate. A low bandgap Group IB-IIIB-VIB2 material solar absorber layer is formed on the back contact layer. A heterojunction partner layer is formed on the low bandgap solar absorber layer, to help form the bottom cell junction, and the heterojunction partner layer includes at least one layer of a high resistivity material having a resistivity of at least 100 ohms-centimeter. The high resistivity material has the formula (Zn and/or Mg)(S, Se, O, and/or OH). A conductive interconnect layer is formed above the heterojunction partner layer, and at least one additional single-junction photovoltaic cell is formed on the conductive interconnect layer, as a top cell. The top cell may have an amorphous Silicon or p-type Cadmium Selenide solar absorber layer. Cadmium Selenide may be converted from n-type to p-type with a chloride doping process.

Abstract: A multi-junction photovoltaic cell includes a substrate and a back contact layer formed on the substrate. A low bandgap Group IB-IIIB-VIB2 material solar absorber layer is formed on the back contact layer. A heterojunction partner layer is formed on the low bandgap solar absorber layer, to help form the bottom cell junction, and the heterojunction partner layer includes at least one layer of a high resistivity material having a resistivity of at least 100 ohms-centimeter. The high resistivity material has the formula (Zn and/or Mg)(S, Se, O, and/or OH). A conductive interconnect layer is formed above the heterojunction partner layer, and at least one additional single-junction photovoltaic cell is formed on the conductive interconnect layer, as a top cell. The top cell may have an amorphous Silicon or p-type Cadmium Selenide solar absorber layer. Cadmium Selenide may be converted from n-type to p-type with a chloride doping process.

Abstract: A multi-junction photovoltaic cell includes a substrate and a back contact layer formed on the substrate. A low bandgap Group IB-IIIB-VIB2 material solar absorber layer is formed on the back contact layer. A heterojunction partner layer is formed on the low bandgap solar absorber layer, to help form the bottom cell junction, and the heterojunction partner layer includes at least one layer of a high resistivity material having a resistivity of at least 100 ohms-centimeter. The high resistivity material has the formula (Zn and/or Mg)(S, Se, O, and/or OH). A conductive interconnect layer is formed above the heterojunction partner layer, and at least one additional single-junction photovoltaic cell is formed on the conductive interconnect layer, as a top cell. The top cell may have an amorphous Silicon or p-type Cadmium Selenide solar absorber layer. Cadmium Selenide may be converted from n-type to p-type with a chloride doping process.

Abstract: A thin-film photovoltaic device includes a semi-transparent back contact layer. The semi-transparent back contact layer includes a semi-transparent contact layer and a semi-transparent contact interface layer. The thin-film photovoltaic device may be formed in a substrate or superstrate configuration. A tandem thin-film photovoltaic device includes a semi-transparent interconnect layer. The semi-transparent interconnect layer includes a semi-transparent contact layer and a semi-transparent contact interface layer.

Abstract: In an embodiment, one reinforced substrate for use in a photovoltaic device includes a polymer base material and a reinforcing structure bonded with the base material. The reinforced substrate presents a surface in a condition that is made-ready for deposition of thin film layers of the photovoltaic device. A thin film photovoltaic device includes the reinforced substrate, a back contact layer formed on the surface of the reinforced substrate, and a solar absorber layer formed on the back contact layer. A plurality of thin film photovoltaic devices may be formed on a common reinforced substrate. A process of producing a reinforced substrate includes combining a fluid base material and a fiber reinforcing structure to form an impregnated fiber reinforcement. The impregnated fiber reinforcement is cured to form the reinforced substrate, and the reinforced substrate is annealed.

Abstract: A thin-film photovoltaic device includes a semi-transparent back contact layer. The semi-transparent back contact layer includes a semi-transparent contact layer and a semi-transparent contact interface layer. The thin-film photovoltaic device may be formed in a substrate or superstrate configuration. A tandem thin-film photovoltaic device includes a semi-transparent interconnect layer. The semi-transparent interconnect layer includes a semi-transparent contact layer and a semi-transparent contact interface layer.

Abstract: A thin-film photovoltaic device includes a semi-transparent back contact layer. The semi-transparent back contact layer includes a semi-transparent contact layer and a semi-transparent contact interface layer. The thin-film photovoltaic device may be formed in a substrate or superstrate configuration. A tandem thin-film photovoltaic device includes a semi-transparent interconnect layer. The semi-transparent interconnect layer includes a semi-transparent contact layer and a semi-transparent contact interface layer.

Abstract: A copper indium diselenide (CIS)-based photovoltaic device includes a CIS-based solar absorber layer including copper, indium, and selenium. The CIS-based photovoltaic device further includes a substrate including a silicone layer formed from a silicone composition and a metal foil layer. The substrate, due to the presence of the silicone layer and the metal foil layer, is both flexible and sufficiently able to withstand annealing temperatures in excess of 500° C. to obtain maximum efficiency of the device.

Abstract: A copper indium diselenide (CIS)-based photovoltaic device includes a CIS-based solar absorber layer including copper, indium, and selenium. The CIS-based photovoltaic device further includes a substrate formed from a silicone composition. The substrate, because it is formed from the silicone composition, is both flexible and sufficiently able to withstand annealing temperatures in excess of 500° C. to obtain maximum efficiency of the device.

Abstract: A multi-junction photovoltaic cell includes a substrate and a back contact layer formed on the substrate. A low bandgap Group IB-IIIB-VIB2 material solar absorber layer is formed on the back contact layer. A heterojunction partner layer is formed on the low bandgap solar absorber layer, to help form the bottom cell junction, and the heterojunction partner layer includes at least one layer of a high resistivity material having a resistivity of at least 100 ohms-centimeter. The high resistivity material has the formula (Zn and/or Mg)(S, Se, O, and/or OH). A conductive interconnect layer is formed above the heterojunction partner layer, and at least one additional single-junction photovoltaic cell is formed on the conductive interconnect layer, as a top cell. The top cell may have an amorphous Silicon or p-type Cadmium Selenide solar absorber layer. Cadmium Selenide may be converted from n-type to p-type with a chloride doping process.

Abstract: In an embodiment, one reinforced substrate for use in a photovoltaic device includes a polymer base material and a reinforcing structure bonded with the base material. The reinforced substrate presents a surface in a condition that is made-ready for deposition of thin film layers of the photovoltaic device. A thin film photovoltaic device includes the reinforced substrate, a back contact layer formed on the surface of the reinforced substrate, and a solar absorber layer formed on the back contact layer. A plurality of thin film photovoltaic devices may be formed on a common reinforced substrate. A process of producing a reinforced substrate includes combining a fluid base material and a fiber reinforcing structure to form an impregnated fiber reinforcement. The impregnated fiber reinforcement is cured to form the reinforced substrate, and the reinforced substrate is annealed.