Abstract: Implementations of the disclosure are directed to thermally decomposable build plates that enable the facile release of 3D metal printed parts created by additive manufacturing. In some implementations, an additive manufacturing build plate comprises: a top surface, a bottom surface, and sidewalls comprised of a material, wherein the top surface, bottom surface, and sidewalls are dimensioned such that the build plate is useable in a 3D printing device; and a recessed section formed through the top surface, wherein the recessed section is configured to be filled with a solid metal or metal alloy to provide a surface for forming a 3D printed object in the 3D printing device.

Abstract: Liquid metal thermal interface materials and their uses in electronics assembly are described. In one implementation, a semiconductor assembly includes: a semiconductor die; a heat exchanger; and a thermal interface material (TIM) alloy bonding the semiconductor die to the heat exchanger without using a separate metallization layer on a surface of the semiconductor die or a surface of the heat exchanger. The TIM alloy may be formed by placing a TIM material between the semiconductor die and the heat exchanger, the TIM material comprising a first liquid metal foam in touching relation with the surface of the semiconductor die, a second liquid metal foam in touching relation with the surface of the heat exchanger.

Abstract: Solid metal foam thermal interface materials and their uses in electronics assembly are described. In one implementation, a method includes: applying a thermal interface material (TIM) between a first device and a second device to form an assembly having a first surface of the TIM in in touching relation with a surface of the first device, and a second surface of the TIM opposite the first surface in touching relation with a surface of the second device, the TIM comprising a solid metal foam and a first liquid metal; and compressing the assembly to form an alloy from the TIM that bonds the first device to the second device.

Abstract: A semiconductor device assembly includes: a semiconductor device; a heat exchanger; and a thermal interface material. In embodiments, the thermal interface material may contact a facing surface of the heat exchanger, the thermal interface material includes alloys that react with a bond enhancing agent to form an indium alloy layer in a portion of the thermal interface. In embodiments, a solid, solder preformed thermal interface material includes an indium metal and may be disposed on the first surface of the semiconductor device; and a liquid metal bond enhancing agent may be disposed on a first surface of the semiconductor device; and contacting a facing surface of the heat exchanger.

Abstract: A method of joining a semiconductor die to a passive heat exchanger can include applying a bond enhancing agent to a semiconductor device; creating an assembly that includes a thermal interface disposed on the semiconductor device such that a first major surface of the thermal interface material is in touching relation with the bond enhancing agent on the semiconductor device, and a heat exchanger disposed in touching relation with a second major surface of the thermal interface material; and reflowing the assembly such that the thermal interface bonds the heat exchanger to the semiconductor device. Embodiments can use the ability of indium to bond to a non-metallic surface to form the thermal interface, which may be enhanced by a secondary coating on either or both joining surfaces.

Abstract: Implementations of the disclosure are directed to thermally decomposable build plates that enable the facile release of 3D metal printed parts created by additive manufacturing. In some implementations, an additive manufacturing build plate comprises: a top surface, a bottom surface, and sidewalls comprised of a material, wherein the top surface, bottom surface, and sidewalls are dimensioned such that the build plate is useable in a 3D printing device; and a recessed section formed through the top surface, wherein the recessed section is configured to be filled with a solid metal or metal alloy to provide a surface for forming a 3D printed object in the 3D printing device.

Abstract: A semiconductor device assembly includes: a semiconductor device; a heat exchanger; and a thermal interface material. In embodiments, the thermal interface material may contact a facing surface of the heat exchanger, the thermal interface material comprises alloys that react with a bond enhancing agent to form an indium alloy layer in a portion of the thermal interface. In embodiments, a solid, solder preformed thermal interface material comprises an indium metal and may be disposed on the first surface of the semiconductor device; and a liquid metal bond enhancing agent may be disposed on a first surface of the semiconductor device; and contacting a facing surface of the heat exchanger, wherein.

Abstract: A method of joining a semiconductor die to a passive heat exchanger can include applying a bond enhancing agent to a semiconductor device; creating an assembly that includes a thermal interface disposed on the semiconductor device such that a first major surface of the thermal interface material is in touching relation with the bond enhancing agent on the semiconductor device, and a heat exchanger disposed in touching relation with a second major surface of the thermal interface material; and reflowing the assembly such that the thermal interface bonds the heat exchanger to the semiconductor device. Embodiments can use the ability of indium to bond to a non-metallic surface to form the thermal interface, which may be enhanced by a secondary coating on either or both joining surfaces.

Abstract: A method of joining a semiconductor die to a passive heat exchanger can include applying a bond enhancing agent to a semiconductor device; creating an assembly that includes a thermal interface disposed on the semiconductor device such that a first major surface of the thermal interface material is in touching relation with the bond enhancing agent on the semiconductor device, and a heat exchanger disposed in touching relation with a second major surface of the thermal interface material; and reflowing the assembly such that the thermal interface bonds the heat exchanger to the semiconductor device. Embodiments can use the ability of indium to bond to a non-metallic surface to form the thermal interface, which may be enhanced by a secondary coating on either or both joining surfaces.

Abstract: A method of joining a semiconductor die to a passive heat exchanger can include applying a bond enhancing agent to a semiconductor device; creating an assembly that includes a thermal interface disposed on the semiconductor device such that a first major surface of the thermal interface material is in touching relation with the bond enhancing agent on the semiconductor device, and a heat exchanger disposed in touching relation with a second major surface of the thermal interface material; and reflowing the assembly such that the thermal interface bonds the heat exchanger to the semiconductor device. Embodiments can use the ability of indium to bond to a non-metallic surface to form the thermal interface, which may be enhanced by a secondary coating on either or both joining surfaces.