Patents by Inventor Ross Hartshorn

Ross Hartshorn has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Elimination of voids at the oxide/silicon interface in trench-based structures
    Patent number: 6472270
    Abstract: Various methods of manufacturing, including oxide film manufacturing, are provided. In one aspect, a method of fabricating an oxide film is provided that includes forming a trench in a semiconductor substrate and exposing the substrate to an oxidizing atmosphere containing oxygen but substantially no chlorine. The substrate is heated to react a surface of the trench with the oxidizing atmosphere to form the oxide film thereon. Chlorine induced oxide-silicon interface voids may be eliminated.
    Type: Grant
    Filed: March 6, 2001
    Date of Patent: October 29, 2002
    Assignee: Advanced Micro Devices, Inc.
    Inventors: Franklin D. Crawford, Jr., Ross Hartshorn, Mohammad M. Farahani