Patents by Inventor Ross Marshall
Ross Marshall has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11031273Abstract: Embodiments of an electrostatic chuck are provided herein. In some embodiments an electrostatic chuck includes an electrode, a dielectric body having a disk shape and covering the electrode, the dielectric body including a central region and a peripheral region, and the dielectric body including a lower surface having a central opening and an upper surface having a first opening in the central region and a plurality of second openings in the peripheral region, wherein the upper surface includes a plurality of protrusions and a diameter of each of the plurality of second openings is greater than 25.0 mils, and gas distribution channels that extend from the lower surface to the upper surface to define a plenum within the dielectric body.Type: GrantFiled: December 7, 2018Date of Patent: June 8, 2021Assignee: APPLIED MATERIALS, INC.Inventors: Bonnie T Chia, Ross Marshall, Tomoharu Matsushita, Cheng-Hsiung Tsai
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Publication number: 20200185247Abstract: Embodiments of an electrostatic chuck are provided herein. In some embodiments an electrostatic chuck includes an electrode, a dielectric body having a disk shape and covering the electrode, the dielectric body including a central region and a peripheral region, and the dielectric body including a lower surface having a central opening and an upper surface having a first opening in the central region and a plurality of second openings in the peripheral region, wherein the upper surface includes a plurality of protrusions and a diameter of each of the plurality of second openings is greater than 25.0 mils, and gas distribution channels that extend from the lower surface to the upper surface to define a plenum within the dielectric body.Type: ApplicationFiled: December 7, 2018Publication date: June 11, 2020Inventors: BONNIE T CHIA, ROSS MARSHALL, TOMOHARU MATSUSHITA, CHENG-HSIUNG TSAI
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Patent number: 10388532Abstract: Ruthenium containing gate stacks and methods of forming ruthenium containing gate stacks are described. The ruthenium containing gate stack comprises a polysilicon layer on a substrate; a silicide layer on the polysilicon layer; a barrier layer on the silicide layer; a ruthenium layer on the barrier layer; and a spacer layer comprising a nitride on sides of the ruthenium layer, wherein the ruthenium layer comprises substantially no ruthenium nitride after formation of the spacer layer. Forming the ruthenium layer comprises sputtering the ruthenium in a krypton environment on a high current electrostatic chuck comprising a high resistivity ceramic material. The sputtered ruthenium layer is annealed at a temperature greater than or equal to about 500° C.Type: GrantFiled: September 28, 2017Date of Patent: August 20, 2019Assignee: APPLIED MATERIALS, INC.Inventors: Jothilingam Ramalingam, Ross Marshall, Jianxin Lei, Xianmin Tang
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Publication number: 20180096852Abstract: Ruthenium containing gate stacks and methods of forming ruthenium containing gate stacks are described. The ruthenium containing gate stack comprises a polysilicon layer on a substrate; a silicide layer on the polysilicon layer; a barrier layer on the silicide layer; a ruthenium layer on the barrier layer; and a spacer layer comprising a nitride on sides of the ruthenium layer, wherein the ruthenium layer comprises substantially no ruthenium nitride after formation of the spacer layer. Forming the ruthenium layer comprises sputtering the ruthenium in a krypton environment on a high current electrostatic chuck comprising a high resistivity ceramic material. The sputtered ruthenium layer is annealed at a temperature greater than or equal to about 500° C.Type: ApplicationFiled: September 28, 2017Publication date: April 5, 2018Inventors: Jothilingam Ramalingam, Ross Marshall, Jianxin Lei, Xianmin Tang
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Patent number: 9613846Abstract: Embodiments are directed to an electrostatic chuck surface having minimum contact area features. More particularly, embodiments of the present invention provide an electrostatic chuck assembly having a pattern of raised, elongated surface features for providing reduced particle generation and reduced wear of substrates and chucking devices.Type: GrantFiled: November 21, 2014Date of Patent: April 4, 2017Assignee: APPLIED MATERIALS, INC.Inventors: Govinda Raj, Cheng-Hsiung Tsai, Robert T. Hirahara, Kadthala R. Narendrnath, Manjunatha Koppa, Ross Marshall
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Publication number: 20150146339Abstract: Embodiments are directed to an electrostatic chuck surface having minimum contact area features. More particularly, embodiments of the present invention provide an electrostatic chuck assembly having a pattern of raised, elongated surface features for providing reduced particle generation and reduced wear of substrates and chucking devices.Type: ApplicationFiled: November 21, 2014Publication date: May 28, 2015Inventors: Govinda RAJ, Cheng-Hsiung TSAI, Robert T. HIRAHARA, Kadthala R. NARENDRNATH, Manjunatha KOPPA, Ross MARSHALL
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Patent number: 7732327Abstract: Embodiments of the invention provide an improved process for depositing tungsten-containing materials. The process utilizes soak processes and vapor deposition processes to provide tungsten films having significantly improved surface uniformity while increasing the production level throughput. In one embodiment, a method is provided which includes depositing a tungsten silicide layer on the substrate by exposing the substrate to a continuous flow of a silicon precursor while also exposing the substrate to intermittent pulses of a tungsten precursor. The method further provides that the substrate is exposed to the silicon and tungsten precursors which have a silicon/tungsten precursor flow rate ratio of greater than 1, for example, about 2, about 3, or greater. Subsequently, the method provides depositing a tungsten nitride layer on the tungsten suicide layer, depositing a tungsten nucleation layer on the tungsten nitride layer, and depositing a tungsten bulk layer on the tungsten nucleation layer.Type: GrantFiled: September 26, 2008Date of Patent: June 8, 2010Assignee: Applied Materials, Inc.Inventors: Sang-Hyeob Lee, Avgerinos V. Gelatos, Kai Wu, Amit Khandelwal, Ross Marshall, Emily Renuart, Wing-Cheong Gilbert Lai, Jing Lin
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Publication number: 20090081866Abstract: Embodiments of the invention provide an improved process for depositing tungsten-containing materials. The process utilizes soak processes and vapor deposition processes to provide tungsten films having significantly improved surface uniformity while increasing the production level throughput. In one embodiment, a method is provided which includes depositing a tungsten silicide layer on the substrate by exposing the substrate to a continuous flow of a silicon precursor while also exposing the substrate to intermittent pulses of a tungsten precursor. The method further provides that the substrate is exposed to the silicon and tungsten precursors which have a silicon/tungsten precursor flow rate ratio of greater than 1, for example, about 2, about 3, or greater. Subsequently, the method provides depositing a tungsten nitride layer on the tungsten suicide layer, depositing a tungsten nucleation layer on the tungsten nitride layer, and depositing a tungsten bulk layer on the tungsten nucleation layer.Type: ApplicationFiled: September 26, 2008Publication date: March 26, 2009Inventors: SANG-HYEOB LEE, Avgerinos V. Gelatos, Kai Wu, Amit Khandelwal, Ross Marshall, Emily Renuart, Wing-Cheong Gilbert Lai, Jing Lin
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Publication number: 20070007088Abstract: A system and method for monitoring the applications of carbon-carbon brakes of an aircraft to determine brake condition and operate a brake maintenance program or charge a brake system user. The system and method includes monitoring each actuation of the brakes and making a separate record of each actuation of the brakes in which there is relative movement of the facing friction surfaces that cause wear, and from that separate record determining brake usage. The monitoring may include measuring changes and processing the signals to distinguish between those which fall below and those which are above a threshold value. The method and system may comprise sensing a plurality of braking parameters having values dependent upon the wear in the system and different faults of the system, and identifying and recording wear and faults based on combinations of values of the parameters.Type: ApplicationFiled: April 26, 2006Publication date: January 11, 2007Applicant: Dunlop Aerospace LimitedInventors: Richard Miller, Ross Marshall, David Bailey, Nicholas Griffin
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Publication number: 20060191751Abstract: A system and method for monitoring the usage of brake members of an aircraft braking system. The system makes a separate record of each brake actuation in which there is relative movement of the brake member's facing friction surfaces which causes wear, determines the types of brake usage and operates a pricing/payment scheme to charge for brake usage.Type: ApplicationFiled: May 16, 2006Publication date: August 31, 2006Applicant: DUNLOP AEROSPACE LIMITEDInventors: Richard Miller, Ross Marshall, David Bailey, Nicholas Griffin