Abstract: A semiconductor device package includes a first substrate having an electrical circuit, semiconductor dies stacked one on top of the other, and bond wires electrically connected one to another. The bond wires electrically couple the semiconductor dies to one another and to the electrical circuit. There is a first bond wire having a first portion connected to a first semiconductor die, a second portion connected to a second semiconductor die, and an intermediate portion between the first portion and second portion. The semiconductor device package further includes a molding compound encapsulating the semiconductor dies, and the first and second portions of the first bond wire. The intermediate portion of the first bond wire is exposed along a top planar surface of the molding compound. The semiconductor device package may be used for coupling one or more other semiconductor device packages thereto via the exposed intermediate portion.

Abstract: A semiconductor device package includes a first substrate having an electrical circuit, semiconductor dies stacked one on top of the other, and bond wires electrically connected one to another. The bond wires electrically couple the semiconductor dies to one another and to the electrical circuit. There is a first bond wire having a first portion connected to a first semiconductor die, a second portion connected to a second semiconductor die, and an intermediate portion between the first portion and second portion. The semiconductor device package further includes a molding compound encapsulating the semiconductor dies, and the first and second portions of the first bond wire. The intermediate portion of the first bond wire is exposed along a top planar surface of the molding compound. The semiconductor device package may be used for coupling one or more other semiconductor device packages thereto via the exposed intermediate portion.

Abstract: A semiconductor package includes a substrate having a top planar surface and a semiconductor die mounted on the top planar surface of the substrate. Bond wires electrically connect the semiconductor die to the substrate. Flow control dams are integrally formed with the top planar surface of the substrate and each flow control dam protrudes from the top planar surface of the substrate at a location proximate to the bond wires. The flow control dams reduce the occurrence of wire sweep in the bond wires electrically connected to the substrate and semiconductor die.