Abstract: Described herein are interconnections for photovoltaic cells and/or photovoltaic modules. In some implementations, one or more first photovoltaic cells generate a first electric current in response to exposure to an illumination source. One or more second cells, which may be located in tandem with the one or more first photovoltaic cells, generate a second electric current in response to exposure to the illumination source. The one or more second cells may be coupled to an output terminal utilizing a conductive film comprising a plurality of conductive vias which function to conduct current from the one or more second cells to the output terminal. In particular embodiments, photovoltaic cells of first and second types may be independently tested and verified prior to being combined to form a tandemly-arranged photovoltaic module.

Abstract: A method of manufacturing a solar cell including depositing a first electrode over a substrate under vacuum, depositing at least one p-type semiconductor absorber layer over the first electrode without breaking the vacuum, where the p-type semiconductor absorber layer comprises a copper indium selenide (CIS) based alloy material, sputter depositing an n-type semiconductor layer over the at least one p-type semiconductor absorber layer to form zinc oxysulfide in the n-type semiconductor layer without breaking the vacuum, and depositing a second electrode over the n-type semiconductor layer without breaking the vacuum.

Abstract: A photovoltaic power generation and storage (PPGS) device includes an electrically conductive substrate, a solar cell disposed on a first side of the substrate, the solar cell including an absorber layer disposed between an anode and a cathode, and a solid-state battery printed on an opposing second side of the substrate, the battery including an electrolyte layer disposed between an anode and a cathode. The method of forming the PPGS device includes forming a semiconductor material stack including a solar cell p-n junction on a first surface of a conductive web, and printing solid-state batteries on an opposing second surface of at least a portion of the conductive web.

Abstract: A method of making a semiconductor structure includes a step of sputtering silver, copper, indium, and gallium on a substrate in an ambient including at least one chalcogen to deposit an alloy of silver, copper, indium, gallium, and at least one chalcogen. A film of the alloy can be deposited on a continuously moving substrate with a high throughput to form a p-type semiconductor absorber layer of a photovoltaic cell.

Abstract: A method of making a photovoltaic device includes forming a p-type compound semiconductor material layer comprising copper, indium, gallium and a chalcogen over a substrate, and forming an n-type metal sulfide layer on the p-type compound semiconductor material layer by sputtering process employing at least one metal and sulfur containing sputtering target having a non-stoichiometric composition in which a metal-to-sulfur atomic ratio is greater than 1.

Abstract: A method of making a semiconductor structure includes a step of sputtering silver, copper, indium, and gallium on a substrate in an ambient including at least one chalcogen to deposit an alloy of silver, copper, indium, gallium, and at least one chalcogen. A film of the alloy can be deposited on a continuously moving substrate with a high throughput to form a p-type semiconductor absorber layer of a photovoltaic cell.

Abstract: The invention relates to a spintronic circuit (10; 11; 15) comprising: a conductive non-magnetic channel (1); —means (2, NM, FM1-FM3) for generating spin polarized electrons (4) in the non-magnetic channel (1) by spin extraction; at least two ferromagnetic contacts (FM1-FM3) arranged along the non-magnetic channel (1) one after another, —means (7, 8, 9) for adjusting the magnetization direction of the ferromagnetic contacts (FM1-FM3); means for propagating the spin polarized electrons (4) along the non-magnetic channel (1); means (5, 6) for measuring the contact resistance of the individual ferromagnetic contacts (FM1-FM3), wherein the contact resistance depends on the relative alignment of the spin polarization direction of the spin polarized electrons (4) in the non-magnetic channel (1) at the ferromagnetic contact (FM1-FM3) and the magnetization direction of the ferromagnetic contact (FM1-FM3).

Abstract: The invention relates to a spintronic circuit (10; 11; 15) comprising: a conductive non-magnetic channel (1); —means (2, NM, FM1-FM3) for generating spin polarized electrons (4) in the non-magnetic channel (1) by spin extraction; at least two ferromagnetic contacts (FM1-FM3) arranged along the non-magnetic channel (1) one after another, —means (7, 8, 9) for adjusting the magnetization direction of the ferromagnetic contacts (FM1-FM3); means for propagating the spin polarized electrons (4) along the non-magnetic channel (1); means (5, 6) for measuring the contact resistance of the individual ferromagnetic contacts (FM1-FM3), wherein the contact resistance depends on the relative alignment of the spin polarization direction of the spin polarized electrons (4) in the non-magnetic channel (1) at the ferromagnetic contact (FM1-FM3) and the magnetization direction of the ferromagnetic contact (FM1-FM3).