Patents by Inventor Rouzbeh Sarrafi
Rouzbeh Sarrafi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11819949Abstract: Laser processing of hard dielectric materials may include cutting a part from a hard dielectric material using a continuous wave laser operating in a quasi-continuous wave (QCW) mode to emit consecutive laser light pulses in a wavelength range of about 1060 nm to 1070 nm. Cutting using a QCW laser may be performed with a lower duty cycle (e.g., between about 1% and 15%) and in an inert gas atmosphere such as nitrogen, argon or helium. Laser processing of hard dielectric materials may further include post-cut processing the cut edges of the part cut from the dielectric material, for example, by beveling and/or polishing the edges to reduce edge defects. The post-cut processing may be performed using a laser beam with different laser parameters than the beam used for cutting, for example, by using a shorter wavelength (e.g., 193 nm excimer laser) and/or a shorter pulse width (e.g., picosecond laser).Type: GrantFiled: October 19, 2020Date of Patent: November 21, 2023Assignee: IPG PHOTONICS CORPORATIONInventors: Jeffrey P. Sercel, Marco Mendes, Rouzbeh Sarrafi, Joshua Schoenly, Xiangyang Song, Mathew Hannon, Miroslaw Sokol
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Patent number: 11565350Abstract: Laser processing of hard dielectric materials may include cutting a part from a hard dielectric material using a continuous wave laser operating in a quasi-continuous wave (QCW) mode to emit consecutive laser light pulses in a wavelength range of about 1060 nm to 1070 nm. Cutting using a QCW laser may be performed with a lower duty cycle (e.g., between about 1% and 15%) and in an inert gas atmosphere such as nitrogen, argon or helium. Laser processing of hard dielectric materials may further include post-cut processing the cut edges of the part cut from the dielectric material, for example, by beveling and/or polishing the edges to reduce edge defects. The post-cut processing may be performed using a laser beam with different laser parameters than the beam used for cutting, for example, by using a shorter wavelength (e.g., 193 nm excimer laser) and/or a shorter pulse width (e.g., picosecond laser).Type: GrantFiled: May 24, 2019Date of Patent: January 31, 2023Assignee: IPG PHOTONICS CORPORATIONInventors: Jeffrey P. Sercel, Marco Mendes, Rouzbeh Sarrafi, Joshua Schoenly, Xiangyang Song, Mathew Hannon, Miroslaw Sokol
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Publication number: 20210094127Abstract: Laser processing of hard dielectric materials may include cutting a part from a hard dielectric material using a continuous wave laser operating in a quasi-continuous wave (QCW) mode to emit consecutive laser light pulses in a wavelength range of about 1060 nm to 1070 nm. Cutting using a QCW laser may be performed with a lower duty cycle (e.g., between about 1% and 15%) and in an inert gas atmosphere such as nitrogen, argon or helium. Laser processing of hard dielectric materials may further include post-cut processing the cut edges of the part cut from the dielectric material, for example, by beveling and/or polishing the edges to reduce edge defects. The post-cut processing may be performed using a laser beam with different laser parameters than the beam used for cutting, for example, by using a shorter wavelength (e.g., 193 nm excimer laser) and/or a shorter pulse width (e.g., picosecond laser).Type: ApplicationFiled: October 19, 2020Publication date: April 1, 2021Inventors: Jeffrey P. Sercel, Marco Mendes, Rouzbeh Sarrafi, Joshua Schoenly, Xiangyang Song, Mathew Hannon, Miroslaw Sokol
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Patent number: 10807199Abstract: Laser processing of hard dielectric materials may include cutting a part from a hard dielectric material using a continuous wave laser operating in a quasi-continuous wave (QCW) mode to emit consecutive laser light pulses in a wavelength range of about 1060 nm to 1070 nm. Cutting using a QCW laser may be performed with a lower duty cycle (e.g., between about 1% and 15%) and in an inert gas atmosphere such as nitrogen, argon or helium. Laser processing of hard dielectric materials may further include post-cut processing the cut edges of the part cut from the dielectric material, for example, by beveling and/or polishing the edges to reduce edge defects. The post-cut processing may be performed using a laser beam with different laser parameters than the beam used for cutting, for example, by using a shorter wavelength (e.g., 193 nm excimer laser) and/or a shorter pulse width (e.g., picosecond laser).Type: GrantFiled: September 19, 2017Date of Patent: October 20, 2020Assignee: IPG PHOTONICS CORPORATIONInventors: Jeffrey P. Sercel, Marco Mendes, Rouzbeh Sarrafi, Joshua Schoenly, Xiangyang Song, Mathew Hannon, Miroslaw Sokol
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Publication number: 20190314934Abstract: Laser processing of hard dielectric materials may include cutting a part from a hard dielectric material using a continuous wave laser operating in a quasi-continuous wave (QCW) mode to emit consecutive laser light pulses in a wavelength range of about 1060 nm to 1070 nm. Cutting using a QCW laser may be performed with a lower duty cycle (e.g., between about 1% and 15%) and in an inert gas atmosphere such as nitrogen, argon or helium. Laser processing of hard dielectric materials may further include post-cut processing the cut edges of the part cut from the dielectric material, for example, by beveling and/or polishing the edges to reduce edge defects. The post-cut processing may be performed using a laser beam with different laser parameters than the beam used for cutting, for example, by using a shorter wavelength (e.g., 193 nm excimer laser) and/or a shorter pulse width (e.g., picosecond laser).Type: ApplicationFiled: May 24, 2019Publication date: October 17, 2019Inventors: Jeffrey P. Sercel, Marco Mendes, Rouzbeh Sarrafi, Joshua Schoenly, Xiangyang Song, Mathew Hannon, Miroslaw Sokol
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Patent number: 10343237Abstract: Laser processing of hard dielectric materials may include cutting a part from a hard dielectric material using a continuous wave laser operating in a quasi-continuous wave (QCW) mode to emit consecutive laser light pulses in a wavelength range of about 1060 nm to 1070 nm. Cutting using a QCW laser may be performed with a lower duty cycle (e.g., between about 1% and 15%) and in an inert gas atmosphere such as nitrogen, argon or helium. Laser processing of hard dielectric materials may further include post-cut processing the cut edges of the part cut from the dielectric material, for example, by beveling and/or polishing the edges to reduce edge defects. The post-cut processing may be performed using a laser beam with different laser parameters than the beam used for cutting, for example, by using a shorter wavelength (e.g., 193 nm excimer laser) and/or a shorter pulse width (e.g., picosecond laser).Type: GrantFiled: August 28, 2015Date of Patent: July 9, 2019Assignee: IPG PHOTONICS CORPORATIONInventors: Jeffrey P. Sercel, Marco Mendes, Rouzbeh Sarrafi, Joshua Schoenly, Xiangyang Song, Mathew Hannon, Miroslaw Sokol
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Patent number: 10286487Abstract: Laser processing of sapphire is performed using a continuous wave laser operating in a quasi-continuous wave (QCW) mode to emit consecutive laser light pulses in a wavelength range of about 1060 nm to 1070 nm (hereinafter “QCW laser”). Laser processing of sapphire using a QCW laser may be performed with a lower duty cycle (e.g., between about 1% and 10%) and in an inert gas atmosphere such as argon or helium. Laser processing of sapphire using a QCW laser may further include the use of an assist laser having a shorter wavelength and/or pulse duration to modify a property of the sapphire substrate to form absorption centers, which facilitate coupling of the laser light pulses of the QCW laser into the sapphire.Type: GrantFiled: February 28, 2014Date of Patent: May 14, 2019Assignee: IPG PHOTONICS CORPORATIONInventors: Vijay Kancharla, William Shiner, Steven Maynard, Jeffrey P. Sercel, Marco Mendes, Rouzbeh Sarrafi
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Patent number: 9956646Abstract: Multiple-beam laser processing may be performed on a workpiece using at least first and second laser beams with different characteristics (e.g., wavelengths and/or pulse durations). In some applications, an assist laser beam is directed at a target location on or within the workpiece to modify a property of the non-absorptive material. A process laser beam is directed at the target location and is coupled into absorption centers formed in the non-absorptive material to complete processing of the non-absorptive material. Multiple-beam laser processing may be used, for example, to drill holes in a substrate made of alumina or other transparent ceramics. In other applications, multiple-beam laser processing may be used in melting applications such as micro-welding, soldering, and forming laser fired contacts. In these applications, the assist laser beam may be used to modify a property of the material or to change the geometry of the parts.Type: GrantFiled: February 27, 2015Date of Patent: May 1, 2018Assignee: IPG Photonics CorporationInventors: Marco Mendes, Jeffrey P. Sercel, Rouzbeh Sarrafi, Xiangyang Song, Joshua Schoenly, Roy Van Gemert, Cristian Porneala
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Publication number: 20180001425Abstract: Laser processing of hard dielectric materials may include cutting a part from a hard dielectric material using a continuous wave laser operating in a quasi-continuous wave (QCW) mode to emit consecutive laser light pulses in a wavelength range of about 1060 nm to 1070 nm. Cutting using a QCW laser may be performed with a lower duty cycle (e.g., between about 1% and 15%) and in an inert gas atmosphere such as nitrogen, argon or helium. Laser processing of hard dielectric materials may further include post-cut processing the cut edges of the part cut from the dielectric material, for example, by beveling and/or polishing the edges to reduce edge defects. The post-cut processing may be performed using a laser beam with different laser parameters than the beam used for cutting, for example, by using a shorter wavelength (e.g., 193 nm excimer laser) and/or a shorter pulse width (e.g., picosecond laser).Type: ApplicationFiled: September 19, 2017Publication date: January 4, 2018Inventors: Jeffrey P. SERCEL, Marco MENDES, Rouzbeh SARRAFI, Joshua SCHOENLY, Xiangyang SONG, Mathew HANNON, Miroslaw SOKOL
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Patent number: 9764427Abstract: Laser processing of hard dielectric materials may include cutting a part from a hard dielectric material using a continuous wave laser operating in a quasi-continuous wave (QCW) mode to emit consecutive laser light pulses in a wavelength range of about 1060 nm to 1070 nm. Cutting using a QCW laser may be performed with a lower duty cycle (e.g., between about 1% and 15%) and in an inert gas atmosphere such as nitrogen, argon or helium. Laser processing of hard dielectric materials may further include post-cut processing the cut edges of the part cut from the dielectric material, for example, by beveling and/or polishing the edges to reduce edge defects. The post-cut processing may be performed using a laser beam with different laser parameters than the beam used for cutting, for example, by using a shorter wavelength (e.g., 193 nm excimer laser) and/or a shorter pulse width (e.g., picosecond laser).Type: GrantFiled: August 28, 2015Date of Patent: September 19, 2017Assignee: IPG Photonics CorporationInventors: Jeffrey P. Sercel, Marco Mendes, Rouzbeh Sarrafi, Joshua Schoenly, Xiangyang Song, Mathew Hannon, Miroslaw Sokol
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Publication number: 20160059354Abstract: Laser processing of hard dielectric materials may include cutting a part from a hard dielectric material using a continuous wave laser operating in a quasi-continuous wave (QCW) mode to emit consecutive laser light pulses in a wavelength range of about 1060 nm to 1070 nm. Cutting using a QCW laser may be performed with a lower duty cycle (e.g., between about 1% and 15%) and in an inert gas atmosphere such as nitrogen, argon or helium. Laser processing of hard dielectric materials may further include post-cut processing the cut edges of the part cut from the dielectric material, for example, by beveling and/or polishing the edges to reduce edge defects. The post-cut processing may be performed using a laser beam with different laser parameters than the beam used for cutting, for example, by using a shorter wavelength (e.g., 193 nm excimer laser) and/or a shorter pulse width (e.g., picosecond laser).Type: ApplicationFiled: August 28, 2015Publication date: March 3, 2016Inventors: Jeffrey P. SERCEL, Marco MENDES, Rouzbeh SARRAFI, Joshua SCHOENLY, Xiangyang SONG, Mathew HANNON, Miroslaw SOKOL
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Publication number: 20160059349Abstract: Laser processing of hard dielectric materials may include cutting a part from a hard dielectric material using a continuous wave laser operating in a quasi-continuous wave (QCW) mode to emit consecutive laser light pulses in a wavelength range of about 1060 nm to 1070 nm. Cutting using a QCW laser may be performed with a lower duty cycle (e.g., between about 1% and 15%) and in an inert gas atmosphere such as nitrogen, argon or helium. Laser processing of hard dielectric materials may further include post-cut processing the cut edges of the part cut from the dielectric material, for example, by beveling and/or polishing the edges to reduce edge defects. The post-cut processing may be performed using a laser beam with different laser parameters than the beam used for cutting, for example, by using a shorter wavelength (e.g., 193 nm excimer laser) and/or a shorter pulse width (e.g., picosecond laser).Type: ApplicationFiled: August 28, 2015Publication date: March 3, 2016Inventors: Jeffrey P. SERCEL, Marco MENDES, Rouzbeh SARRAFI, Joshua SCHOENLY, Xiangyang SONG, Mathew HANNON, Miroslaw SOKOL
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Publication number: 20160001398Abstract: Laser processing of sapphire is performed using a continuous wave laser operating in a quasi-continuous wave (QCW) mode to emit consecutive laser light pulses in a wavelength range of about 1060 nm to 1070 nm (hereinafter “QCW laser”). Laser processing of sapphire using a QCW laser may be performed with a lower duty cycle (e.g., between about 1% and 10%) and in an inert gas atmosphere such as argon or helium. Laser processing of sapphire using a QCW laser may further include the use of an assist laser having a shorter wavelength and/or pulse duration to modify a property of the sapphire substrate to form absorption centers, which facilitate coupling of the laser light pulses of the QCW laser into the sapphire.Type: ApplicationFiled: February 28, 2014Publication date: January 7, 2016Inventors: Vijay KANCHARLA, William SHINER, Steven MAYNARD, Jeffrey P. SERCEL, Marco MENDES, Rouzbeh SARRAFI
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Publication number: 20150246412Abstract: Multiple-beam laser processing may be performed on a workpiece using at least first and second laser beams with different characteristics (e.g., wavelengths and/or pulse durations). In some applications, an assist laser beam is directed at a target location on or within the workpiece to modify a property of the non-absorptive material. A process laser beam is directed at the target location and is coupled into absorption centers formed in the non-absorptive material to complete processing of the non-absorptive material. Multiple-beam laser processing may be used, for example, to drill holes in a substrate made of alumina or other transparent ceramics. In other applications, multiple-beam laser processing may be used in melting applications such as micro-welding, soldering, and forming laser fired contacts. In these applications, the assist laser beam may be used to modify a property of the material or to change the geometry of the parts.Type: ApplicationFiled: February 27, 2015Publication date: September 3, 2015Inventors: Marco Mendes, Jeffrey P. Sercel, Rouzbeh Sarrafi, Xiangyang Song, Joshua Schoenly, Roy Van Gemert, Cristian Porneala