Patents by Inventor Rovindra Dat

Rovindra Dat has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6011683
    Abstract: An improved structure for a thin multilayer capacitor where the electrodes are formed only on a portion of the ends of the package to reduce the footprint on the circuit board and the amount of noble metal used for each unit. The improved structure results from a manufacturing method that has additional advantages of reduced fabrication costs and fewer manufacturing steps.
    Type: Grant
    Filed: January 30, 1998
    Date of Patent: January 4, 2000
    Assignee: Texas Instruments Incorporated
    Inventor: Rovindra Dat
  • Patent number: 5831818
    Abstract: A portable computer (5) having a lightweight case are disclosed. The case includes a top panel (10) and a bottom panel (8), each with side panels (14t; 14b) integrally molded therewith or otherwise attached thereto. The top panel (10) and bottom panel (8) each are molded to have an inner surface portion (30; 28) having a checkerboard pattern of protrusions (20) and recessed portions (22). The side panels (14t; 14b) are of the full thickness of the protrusions (20), to provide structural support for the computer (5). Other panels (12; 18) may be similarly constructed to have checkerboard patterns of protrusions (20) and recessed portions (22), as desired.
    Type: Grant
    Filed: December 23, 1996
    Date of Patent: November 3, 1998
    Assignee: Texas Instruments Incorporated
    Inventor: Rovindra Dat
  • Patent number: 5555486
    Abstract: Ferroelectric capacitors with hybrid electrodes including both a conducting oxide and a noble metal may be used to achieve devices having improved performance over capacitors with either platinum or ruthenium oxide electrodes. These hybrid electrode structures can improve capacitor performance both in terms of fatigue and leakage current. Accordingly, these ferroelectric capacitors with hybrid electrodes can be used as elements of an integrated circuit such as a non-volatile memory or dynamic random access memory.
    Type: Grant
    Filed: December 29, 1994
    Date of Patent: September 10, 1996
    Assignee: North Carolina State University
    Inventors: Angus I. Kingon, Husam N. Al-Shareef, Orlando H. Auciello, Ken D. Gifford, Dan J. Lichtenwalner, Rovindra Dat