Abstract: A method and system provide a magnetoresistive structure from a magnetoresistive stack that includes a plurality of layers. The method and system include providing a mask that exposes a portion of the magnetoresistive stack. The mask has at least one side, a top, and a base at least as wide as the top. The method and system also include removing the portion of the magnetoresistive stack to define the magnetoresistive structure. The method and system further include providing an insulating layer. A portion of the insulating layer resides on the at least one side of the mask. The method and system further include removing the portion of the insulating layer on the at least one side of the mask and removing the mask.

Abstract: A method of lifting off photoresist beneath an overlayer includes providing a structure including photoresist and depositing an overlayer impenetrable to a liftoff solution over the photoresist and a field region around the structure. The method also includes forming a mask over the structure and ion milling to remove the overlayer in the field region not covered by the mask. The method then includes lifting off the photoresist using the liftoff solution.