Abstract: A method and apparatus for detecting metal extrusion associated with electromigration (EM) under high current density situations within an EM test line by measuring changes in capacitance associated with metal extrusion that occurs in the vicinity of the charge carrying surfaces of one or more capacitors situated in locations of close physical proximity to anticipated sites of metal extrusion on an EM test line are provided. The capacitance of each of the one or more capacitors is measured prior to and then during or after operation of the EM test line so as to detect capacitance changes indicating metal extrusion.

Abstract: A dual damascene process capable of reliably producing aluminum interconnects that exhibit improved electromigration characteristics over aluminum interconnects produced by conventional RIE techniques. In particular, the dual damascene process relies on a PVD-Ti/CVD-TiN barrier layer to produce aluminum lines that exhibit significantly reduced saturation resistance levels and/or suppressed electromigration, particularly in lines longer than 100 micrometers. The electromigration lifetime of the dual damascene aluminum line is strongly dependent on the materials and material fill process conditions. Significantly, deviations in materials and processing can result in electromigration lifetimes inferior to that achieved with aluminum RIE interconnects. In one example, current densities as high as 2.5 MA/cm2 are necessary to induce a statistically relevant number of fails due to electromigration.

Abstract: A structure and process to define a via/interconnect structure is described. The structure is formed by reactive ion etching (RIE) where vias are formed first then the interconnects. The disclosed method relies on first depositing a metal with a thickness equivalent to the total height of the via and interconnect. Once vias are delineated by forming a hard mask and lithography, the lines are patterned using a lithographic step. Vias and lines are formed using lithography and RIE in one step and interfacial integrity is maintained resulting in high electromigration performance.

Abstract: A structure and process to define a via/interconnect structure is described. The structure is formed by reactive ion etching (RIE) where vias are formed first then the interconnects. The disclosed method relies on first depositing a metal with a thickness equivalent to the total height of the via and interconnect. Once vias are delineated by forming a hard mask and lithography, the lines are patterned using a lithographic step. Vias and lines are formed using lithography and RIE in one step and interfacial integrity is maintained resulting in high electromigration performance.