Patents by Inventor Roy DAGHER

Roy DAGHER has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 12278224
    Abstract: A method for obtaining mesas that are made at least in part of a nitride (N), the method includes providing a stack comprising a substrate and at least the following layers disposed in succession from the substrate a first layer, referred to as the flow layer, and a second, crystalline layer, referred to as the crystalline layer; forming pads by etching the crystalline layer and at least one portion of the flow layer such that: —each pad includes at least: —a first section, referred to as the flow section, formed by at least one portion of the flow layer, and a second, crystalline section, referred to as the crystalline section, framed by the crystalline layer and overlying the flow section, the pads are distributed over the substrate so as to form a plurality of sets of pads; and epitaxially growing a crystallite on at least some of said pads and continuing the epitaxial growth of the crystallites until the crystallites carried by the adjacent pads of the same set coalesce.
    Type: Grant
    Filed: June 22, 2020
    Date of Patent: April 15, 2025
    Assignees: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES, CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE
    Inventors: Guy Feuillet, Blandine Alloing, Hubert Bono, Roy Dagher, Jesus Zuniga Perez, Matthew Charles, Julien Buckley, Rene Escoffier
  • Publication number: 20250118552
    Abstract: The invention relates to a method for obtaining a layer at least partially made of a nitride (N), first comprising the provision of a stack comprising at least one assembly of pads (1000A1-1000B4) extending from a substrate (100). Each pad comprises at least one creep section (220A1-220A5) and one crystalline section (300A1,300A5) surmounting the creep section (200A1-200A5). Then, a crystallite (510A1-510A5) is epitaxially grown on at least some of said pads until coalescence of the crystallites, so as to form a nitride layer (550A). The pads of the assembly are distributed over the substrate, such that the relative arrangement of the pads of the assembly is such that during the epitaxy of the crystallites, the progressive coalescence of the crystallites is always done between, on the one hand, a crystallite or a plurality of coalesced crystallites and, on the other hand, an isolated crystallite.
    Type: Application
    Filed: October 9, 2024
    Publication date: April 10, 2025
    Applicants: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES, CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE, UNIVERSITE GRENOBLE ALPES, INSTITUT POLYTECHNIQUE DE GRENOBLE
    Inventors: Matthew CHARLES, Roy DAGHER, Guy FEUILLET, Jesus ZUNIGA PEREZ, Cécile GOURGON
  • Patent number: 12134836
    Abstract: A method for producing at least one nitride layer includes providing a stack having a plurality of pillars extending from a substrate of the stack. Each pillar includes at least a crystalline section and a summit having a summit surface area The method also includes growing by epitaxy a crystallite from the summit of some the plurality of pillars and continuing the epitaxial growth of the crystallites until the crystallites supported by the pillars coalesce. The plurality of pillars includes at least one retention pillar and separation pillars. The pillars are configured so that once the nitride layer is formed, the at least one retention pillar retains the nitride layer and some of the separation pillars can fracture.
    Type: Grant
    Filed: December 22, 2021
    Date of Patent: November 5, 2024
    Assignees: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES, CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE, UNIVERSITE GRENOBLE ALPES
    Inventors: Matthew Charles, Guy Feuillet, Roy Dagher
  • Publication number: 20240047201
    Abstract: A method for producing a vertical component comprising with the basis of a III-N material, comprising providing platelets made of the III-N material obtained by epitaxy on pads, the platelets comprise at least first and second layers doped and stacked on one another in a vertical direction. The method further includes the production of a first electrode and the production of a second electrode located on the platelet and configured such that a current passing from one electrode to the other passes through at least the second layer in all of its thickness, the thickness being taken in the vertical direction.
    Type: Application
    Filed: December 22, 2021
    Publication date: February 8, 2024
    Applicants: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES, CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE
    Inventors: Guy FEUILLET, Thierry BOUCHET, Matthew CHARLES, Roy DAGHER, Jesus ZUNIGA PEREZ
  • Publication number: 20220359479
    Abstract: A method for obtaining mesas that are made at least in part of a nitride (N), the method includes providing a stack comprising a substrate and at least the following layers disposed in succession from the substrate a first layer, referred to as the flow layer, and a second, crystalline layer, referred to as the crystalline layer; forming pads by etching the crystalline layer and at least one portion of the flow layer such that: —each pad includes at least: —a first section, referred to as the flow section, formed by at least one portion of the flow layer, and a second, crystalline section, referred to as the crystalline section, framed by the crystalline layer and overlying the flow section, the pads are distributed over the substrate so as to form a plurality of sets of pads; and epitaxially growing a crystallite on at least some of said pads and continuing the epitaxial growth of the crystallites until the crystallites carried by the adjacent pads of the same set coalesce.
    Type: Application
    Filed: June 22, 2020
    Publication date: November 10, 2022
    Applicants: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES, CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE
    Inventors: Guy FEUILLET, Blandine ALLOING, Hubert BONO, Roy DAGHER, Jesus ZUNIGA PEREZ, Matthew CHARLES, Julien BUCKLEY, Rene ESCOFFIER
  • Publication number: 20220251730
    Abstract: A method for producing at least one nitride layer includes providing a stack having a plurality of pillars extending from a substrate of the stack. Each pillar includes at least a crystalline section and a summit having a summit surface area The method also includes growing by epitaxy a crystallite from the summit of some the plurality of pillars and continuing the epitaxial growth of the crystallites until the crystallites supported by the pillars coalesce. The plurality of pillars includes at least one retention pillar and separation pillars. The pillars are configured so that once the nitride layer is formed, the at least one retention pillar retains the nitride layer and some of the separation pillars can fracture.
    Type: Application
    Filed: December 22, 2021
    Publication date: August 11, 2022
    Applicants: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES, CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE, UNIVERSITE GRENOBLE ALPES
    Inventors: Matthew CHARLES, Guy FEUILLET, Roy DAGHER