Abstract: An electronic device includes a photosensitive zone and electric circuits distributed within an insulator. The photosensitive zone and the insulator are placed on the surface of a substrate. The insulator extends to a first height from the surface of the substrate, and a transparent material covers the photosensitive zone to a second height from the surface of the substrate. The second height is less than said first height. According to an advantageous method of manufacturing the electronic device, the transparent material is identical to the insulator, and the method comprises a step of removing the transparent material between the first height and the second height.

Abstract: A monolithic photodetector including a photodiode, a precharge MOS transistor, a control MOS transistor, a read MOS transistor, and a transfer MOS transistor, the photodiode and the transfer transistor being formed in a same substrate of a first conductivity type, the photodiode including a first region of the second conductivity type formed under a second region of the first conductivity type more heavily doped than the first region, and above a third region of the first conductivity type more heavily doped than the substrate, the first region being the source of the second conductivity type of the transfer transistor, the second and third regions being connected to the substrate and being at a fixed voltage.

Abstract: A monolithic photodetector including a photodiode, a precharge MOS transistor, a control MOS transistor, and a read MOS transistor, the photodiode and the precharge transistor being formed in a same substrate of a first conductivity type, the photodiode including a first region of the second conductivity type formed under a second region of the first conductivity type more heavily doped than the substrate, and under a third region of the second conductivity type, more heavily doped than the first region, the second and third regions being separate, the first region forming the source region of the second conductivity type of the precharge MOS transistor, the second and third regions being connected, respectively, to a fixed voltage and to the gate of the control transistor.

Abstract: A monolithic photodetector including a photodiode, a precharge MOS transistor, a control MOS transistor, a read MOS transistor, and a transfer MOS transistor, the photodiode and the transfer transistor being formed in a same substrate of a first conductivity type, the photodiode including a first region of the second conductivity type formed under a second region of the first conductivity type more heavily doped than the first region, and above a third region of the first conductivity type more heavily doped than the substrate, the first region being the source of the second conductivity type of the transfer transistor, the second and third regions being connected to the substrate and being at a fixed voltage.