Abstract: The invention relates to the synthetic functionalization of an anthraquinone molecule that is substituted with at least one hydroxyl or amino group. In some aspects of the invention a mixture containing said anthraquinone starting material, an aldehyde, a base, an optional solvent, and an optional catalyst is reacted with hydrogen and then with an oxidant. In other aspects of the invention the synthetic functionalization of the anthraquinone molecule takes place electrochemically rather than chemically, through the use of a divided electrolytic cell.

Abstract: An adhesive composition, especially suitable for a two-part adhesive system curable via free radical polymerization comprises; (A) (meth)acrylate ester monomer; (B) chlorinated elastomeric polymer; (C) core-shell impact modifier; and (D) urethane (meth)acrylate oligomer. Example adhesive compositions include urethane (meth)acrylate oligomer (D) derived from (i) a di- or higher isocyanate having at least two isocyanate groups which differ in reactivity; (ii) a chain-extending reagent which has at least two groups selected from hydroxyl and/or amino groups, each capable of reaction with an isocyanate group of (i); (iii) a hydroxymethacrylate component or hydroxyacrylate component.

Abstract: An adhesive composition, especially suitable for a two-part adhesive system curable via free radical polymerisation comprises; (A) (meth)acrylate ester monomer; (B) chlorinated elastomeric polymer; (C) core-shell impact modifier; and (D) urethane (meth)acrylate oligomer. Example adhesive compositions include urethane (meth) acrylate oligomer (D) derived from (i) a di- or higher isocyanate having at least two isocyanate groups which differ in reactivity; (ii) a chain-extending reagent which has at least two groups selected from hydroxyl and/or amino groups, each capable of reaction with an isocyanate group of (i); (iii) a hydroxymethacrylate component or hydroxyacrylate component.

Abstract: A process condition measuring device and a handling system may be highly integrated with a production environment where the dimensions of the process condition measuring device are close to those of a production substrate and the handling system is similar to a substrate carrier used for production substrates. Process conditions may be measured with little disturbance to the production environment. Data may be transferred from a process condition-measuring device to a user with little or no human intervention.

Abstract: A fuel cell component having a coating thereon including binary and ternary nitrides and oxynitrides of elements of IVb and Vb groups of the periodic table of elements.

Abstract: This invention relates to materials and processes for selective deposition of silica films on non-metallic areas of substrates while avoiding any significant deposition on metallic conductive areas. Silica sealed the surface pores of a porous dielectric by the reaction of an aluminum-containing compound with an alkoxysilanol. Metal layers are protected from this deposition of silica by adsorption of a partially fluorinated alkanethiol. This invention provides processes for producing semi-porous dielectric materials wherein surface porosity is significantly reduced or removed while internal porosity is preserved to maintain a desired low-k value for the overall dielectric material. At the same time, a clean metal surface is produced, so that low electrical resistances of connections between copper layers are maintained. The combination of low-k dielectric constant and low resistance allows construction of microelectronic devices operating at high speeds.

Abstract: A fuel cell component having a coating thereon including binary and ternary nitrides and oxynitrides of elements of IVb and Vb groups of the periodic table of elements.

Abstract: A process condition measuring device and a handling system may be highly integrated with a production environment where the dimensions of the process condition measuring device are close to those of a production substrate and the handling system is similar to a substrate carrier used for production substrates. Process conditions may be measured with little disturbance to the production environment. Data may be transferred from a process condition-measuring device to a user with little or no human intervention.

Abstract: A process condition measuring device and a handling system may be highly integrated with a production environment where the dimensions of the process condition measuring device are close to those of a production substrate and the handling system is similar to a substrate carrier used for production substrates. Process conditions may be measured with little disturbance to the production environment. Data may be transferred from a process condition measuring device to a user with little or no human intervention.

Abstract: A process condition measuring device and a handling system may be highly integrated with a production environment where the dimensions of the process condition measuring device are close to those of a production substrate and the handling system is similar to a substrate carrier used for production substrates. A process condition measuring device surveys conditions in a target environment and records them in a memory for later transmission or downloading.

Abstract: The present invention is a feed bunk having a cover portion and a bunk portion. The feed bunk supported by at least one support leg. The feed bunk configured for rotation from a feeding position to a filling/loading position.

Abstract: A process condition measuring device and a handling system may be highly integrated with a production environment where the dimensions of the process condition measuring device are close to those of a production substrate and the handling system is similar to a substrate carrier used for production substrates. Process conditions may be measured with little disturbance to the production environment. Data may be transferred from a process condition-measuring device to a user with little or no human intervention.

Abstract: Metal films are deposited with uniform thickness and excellent step coverage. Copper metal films were deposited on heated substrates by the reaction of alternating doses of copper(I) NN?-diisopropylacetamidinate vapor and hydrogen gas. Cobalt metal films were deposited on heated substrates by the reaction of alternating doses of cobalt(II) bis(N,N?-diisopropylacetamidinate) vapor and hydrogen gas. Nitrides and oxides of these metals can be formed by replacing the hydrogen with ammonia or water vapor, respectively. The films have very uniform thickness and excellent step coverage in narrow holes. Suitable applications include electrical interconnects in microelectronics and magnetoresistant layers in magnetic information storage devices.

Abstract: Tungsten nitride films were deposited on heated substrates by the reaction of vapors of tungsten bis(alkylimide)bis(dialkylamide) and a Lewis base or a hydrogen plasma. For example, vapors of tungsten bis(tert-butylimide)bis(dimethylamide) and ammonia gas supplied in alternate doses to surfaces heated to 300° C. produced coatings of tungsten nitride having very uniform thickness and excellent step coverage in holes with aspect ratios up to at least 40:1. The films are metallic and good electrical conductors. Suitable applications in microelectronics include barriers to the diffusion of copper and electrodes for capacitors. Similar processes deposit molybdenum nitride, which is suitable for layers alternating with silicon in X-ray mirrors.

Abstract: Metal silicates or phosphates are deposited on a heated substrate by the reaction of vapors of alkoxysilanols or alkylphosphates along with reactive metal amides, alkyls or alkoxides. For example, vapors of tris(tert-butoxy)silanol react with vapors of tetrakis(ethylmethylamido)hafnium to deposit hafnium silicate on surfaces heated to 300° C. The product film has a very uniform stoichiometry throughout the reactor. Similarly, vapors of diisopropylphosphate react with vapors of lithium bis(ethyldimethylsilyl)amide to deposit lithium phosphate films on substrates heated to 250° C. Supplying the vapors in alternating pulses produces these same compositions with a very uniform distribution of thickness and excellent step coverage.

Abstract: The invention provides a method for molecular analysis. In the method, sidewalls are formed extending through a structure between two structure surfaces, to define an aperture. A layer of material is deposited on the aperture sidewalls and the two structure surfaces. The aperture with the deposited material layer is then configured in a liquid solution with a gradient in a chemical potential, between the two structure surfaces defining the aperture, that is sufficient to cause molecular translocation through the aperture.

Abstract: A process condition measuring device and a handling system may be highly integrated with a production environment where the dimensions of the process condition measuring device are close to those of a production substrate and the handling system is similar to a substrate carrier used for production substrates. Process conditions may be measured with little disturbance to the production environment. Data may be transferred from a process condition measuring device to a user with little or no human intervention.

Abstract: This invention relates to materials and processes for thin film deposition on solid substrates. Silica/alumina nanolaminates were deposited on heated substrates by the reaction of an aluminum-containing compound with a silanol. The nanolaminates have very uniform thickness and excellent step coverage in holes with aspect ratios over 40:1. The films are transparent and good electrical insulators. This invention also relates to materials and processes for producing improved porous dielectric materials used in the insulation of electrical conductors in microelectronic devices, particularly through materials and processes for producing semi-porous dielectric materials wherein surface porosity is significantly reduced or removed while internal porosity is preserved to maintain a desired low-k value for the overall dielectric material.

Abstract: A method of converting a signature into an authorization for an item of value in lieu of cash, the method including the steps of transmitting a request, comprising a digitized signature and an amount requested by the user, to a service provider with whom the user has an account; validating the request; and generating for the user an authorization wherein the authorization may be used in lieu of money in the amount authorized.

Abstract: A process condition measuring device and a handling system may be highly integrated with a production environment where the dimensions of the process condition measuring device are close to those of a production substrate and the handling system is similar to a substrate carrier used for production substrates. Process conditions may be measured with little disturbance to the production environment. Data may be transferred from a process condition-measuring device to a user with little or no human intervention.