Abstract: A method, a system, and a non-transitory computer readable medium for measuring a local critical dimension uniformity of an array of two-dimensional structural elements, the method may include obtaining an acquired optical spectrometry spectrum of the array; feeding the acquired optical spectrometry spectrum of the array to a trained machine learning process, wherein the trained machine learning process is trained to map an optical spectrometry spectrum to an average critical dimension (CD) and a local critical dimension uniformity (LCDU); and outputting, by the trained machine learning process, the average CD and the LCDU of the array.

Abstract: A method, a system, and a non-transitory computer readable medium for measuring a local critical dimension uniformity of an array of two-dimensional structural elements, the method may include obtaining an acquired optical spectrometry spectrum of the array; feeding the acquired optical spectrometry spectrum of the array to a trained machine learning process, wherein the trained machine learning process is trained to map an optical spectrometry spectrum to an average critical dimension (CD) and a local critical dimension uniformity (LCDU); and outputting, by the trained machine learning process, the average CD and the LCDU of the array.

Abstract: A computer-implemented method for measuring a parameter of a semiconductor. A non-limiting example of the computer-implemented method includes receiving, using a processor, a raw signal from a first tool representing a measured parameter of a semiconductor device. The method also receives, using the processor, data on the measured parameter from a second tool, and calculates, using the processor, the measured parameter based on the data received from the second tool and on a constraint based on the raw signal from the first tool.

Abstract: Determining parameters of a patterned structure located on top of an underneath layered structure, where input data is provided which includes first measured data PMD being a function ƒ of spectral intensity I? and phase ?, PMD=ƒ(I?; ?), corresponding to a complex spectral response of the underneath layered structure, and second measured data Smeas indicative of specular reflection spectral response of a sample formed by the patterned structure and the underneath layered structure, and where a general function F is also provided describing a relation between a theoretical optical response Stheor of the sample and a modeled optical response Smodel of the patterned structure and the complex spectral response PMD of the underneath layered structure, such that Stheor=F(Smodel; PMD), where the general function is then utilized for comparing the second measured data Smeas and the theoretical optical response Stheor, and determining parameter(s) of interest of the top structure.

Abstract: A computer-implemented method for measuring a parameter of a semiconductor. A non-limiting example of the computer-implemented method includes receiving, using a processor, a raw signal from a first tool representing a measured parameter of a semiconductor device. The method also receives, using the processor, data on the measured parameter from a second tool, and calculates, using the processor, the measured parameter based on the data received from the second tool and on a constraint based on the raw signal from the first tool.

Abstract: Determining parameters of a patterned structure located on top of an underneath layered structure, where input data is provided which includes first measured data PMD being a function ƒ of spectral intensity I? and phase ?, PMD=ƒ(I?; ?), corresponding to a complex spectral response of the underneath layered structure, and second measured data Smeas indicative of specular reflection spectral response of a sample formed by the patterned structure and the underneath layered structure, and where a general function F is also provided describing a relation between a theoretical optical response Stheor of the sample and a modeled optical response Smodel of the patterned structure and the complex spectral response PMD of the underneath layered structure, such that Stheor=F(Smodel; PMD), where the general function is then utilized for comparing the second measured data Smeas and the theoretical optical response Stheor, and determining parameter(s) of interest of the top structure.

Abstract: A data analysis method and system are presented for use in determining one or more parameters of a patterned structure located on top of an underneath layered structure. According to this technique, input data is provided which includes first measured data PMD being a function ƒ of spectral intensity I? and phase ?, PMD=ƒ(I?;?), corresponding to a complex spectral response of the underneath layered structure, and second measured data Smeas indicative of specular reflection spectral response of a sample formed by the patterned structure and the underneath layered structure. Also provided is a general function F describing a relation between a theoretical optical response Stheor of the sample and a modeled optical response Smodel of the patterned structure and the complex spectral response PMD of the underneath layered structure, such that Stheor=F(Smodel; PMD).

Abstract: A data analysis method and system are presented for use in determining one or more parameters of a patterned structure located on top of an underneath layered structure. According to this technique, input data is provided which includes first measured data PMD being a function ƒ of spectral intensity I? and phase ?, PMD=ƒ(I?;?), corresponding to a complex spectral response of the underneath layered structure, and second measured data Smeas indicative of specular reflection spectral response of a sample formed by the patterned structure and the underneath layered structure. Also provided is a general function F describing a relation between a theoretical optical response Stheor of the sample and a modeled optical response Smodel of the patterned structure and the complex spectral response PMD of the underneath layered structure, such that Stheor=F(Smodel; PMD).